SK30GD066ET

SK30GD066ET
Absolute Maximum Ratings
Symbol Conditions
IGBT
-78
9
!
9 0 *<3 6
!=>
0 53 62 0 53 6
;++
-
/+
$
0 <+ 6
1*
$
;+
$
? 5+
-
!=>0 5 !
- 0 1;+ -@ -"7 A 5+ -@
-78 B ;++ -
Units
0 53 6
-"78
SEMITOP® 3
Values
9
0 *3+ 6
;
C
0 53 6
1;
$
0 <+ 6
5D
$
;+
$
*;+
$
Inverse Diode
IGBT Module
SK30GD066ET
!&
9
0 *<3 6
!&=>
!&=>0 5 !&
!&8>
0 *+ @ )
9
0 *3+ 6
Module
!=>8
$
)9
Features
!" #
$% # &'
! ( Typical Applications*
!) *+ ,-$
#. / ,'
Remarks
- 0 1+++- $23+42*
-
$2 * .
Characteristics
Symbol Conditions
IGBT
-"7
-"7 0 -72 ! 0 +2/1 $
!78
-"7 0 + -2 -7 0 -78
!"78
-7 0 + -2 -"7 0 5+ -
E/+ ... F*<3
6
E/+ ... F*53
6
53++
-
0 53 62 min.
typ.
3
32D
9 0 53 6
9
0 *53 6
9
0 53 6
max.
;23
-
+2++*;
$
$
1++
9 0 *53 6
-7+
9 0 53 6
9
7
-7
-"7 0 *3 ! 0 1+ $2 -"7 0 *3 -
0 *3+ 6
9 0 536
7
*2*
-
+2D
*
-
*D21
53
H
5D
13
H
-
0 *3+6
9
0 536
).
*2/3
*2D3
9
0 *536
).
*2;3
52+3
-
*2;1
+2**
&
&
+2+3
&
-"70E<-...F*3-
5<3
=" 0 53 H
J 0 5113 $JC
=" 0 53 H
J 0 5113 $JC
5/
5<
+2G<
15D
3/
K
*2<<
K
*2;3
LJ'
-7 0 532 -"7 0 + -
7
=9E
$
$
+2G
9
0 * >4
I"
Units
!"
- 0 1++!0 1+$
9 0 *3+ 6
-"70E<JF*3-
GD-ET
1
09-11-2011 DIL
© by SEMIKRON
SK30GD066ET
Characteristics
Symbol Conditions
Inverse Diode
-& 0 -7
!& 0 1+ $@ -"7 0 + -
-&+
SEMITOP 3
IGBT Module
SK30GD066ET
!" #
$% # &'
! ( max.
Units
0 53 6
).
*2/3
*2<
-
9
0 *3+ 6
).
*2/3
*2<
-
*
*2*
-
9 0 *3+ 6
+2G
*
-
9
0 53 6
*3
5+
H
9
0 *3+ 6
*D
5121
H
9 0 *3+ 6
1+
*2;
$
C
!==>
I
!& 0 1+ $
J 0 5113 $JC
7
-0 1++-
+25;
K
=9E
52*
LJ'
>
,
5253
523
(
1+
/G1?3M
H
Temperature sensor
=*++
Features
typ.
9
9 0 53 6
&
®
min.
0*++6
=5303,H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
Typical Applications*
!) *+ ,-$
#. / ,'
Remarks
- 0 1+++- $23+42*
GD-ET
2
09-11-2011 DIL
© by SEMIKRON
SK30GD066ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
09-11-2011 DIL
© by SEMIKRON
SK30GD066ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
09-11-2011 DIL
© by SEMIKRON
SK30GD066ET
UL recognized
file no. E63 532
35 8 2 N2 O 5
5
35
"E7
09-11-2011 DIL
© by SEMIKRON