SKM 400GA123D

SKM 400GA123D
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Absolute Maximum Ratings
Symbol Conditions
IGBT
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IGBT Modules
SKM 400GA123D
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SEMITRANS® 4
Values
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Characteristics
Symbol Conditions
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GA
1
11-09-2006 RAA
© by SEMIKRON
SKM 400GA123D
Characteristics
Symbol Conditions
Inverse Diode
( 2 5*
&( 2 :11 +> <5 2 1 (1
min.
typ.
max.
Units
.6 2 03 4*
C
0
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SEMITRANS 4
IGBT Modules
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Freewheeling Diode
SKM 400GA123D
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Features
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GA
2
11-09-2006 RAA
© by SEMIKRON
SKM 400GA123D
SEMITRANS® 4
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
;
;
;
;
2/
20
2:
28
2/
20
2:
::
99
0$
1$
113
111B
11108
OLM
OLM
OLM
OLM
28
1111/
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;
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20
2:
28
2/
20
2:
93
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111:
OLM
OLM
OLM
OLM
28
1111/
Zth(j-c)D
IGBT Modules
SKM 400GA123D
Features
! " #
$ % &
'
#
( ) # *+ & "
,-* , *
-
.
/0 01 Typical Applications*
# GA
3
11-09-2006 RAA
© by SEMIKRON
SKM 400GA123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
11-09-2006 RAA
© by SEMIKRON
SKM 400GA123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
11-09-2006 RAA
© by SEMIKRON
SKM 400GA123D
UL Recognized
File 63 532
* , 3B
<+
6
* , 3B
11-09-2006 RAA
© by SEMIKRON