SKM 800GA125D
Absolute Maximum Ratings
Symbol Conditions
IGBT
8 6 14 7
8 6 +4, 7
*=
" 6 147' % ! "#/
+1,,
:(,
5
" 6 ;, 7
4<,
5
+1,,
5
> 1,
+,
A
" 6 14 7
:1,
5
" 6 ;, 7
4,,
5
+1,,
5
4:,,
5
4,,
5
D, CCC E+4, +14
7
+14
7
D,,,
*=61)
Ultrafast IGBT Modules
SKM 800GA125D
"
6 (,, ? 3 1, ?
@ +1,, Units
" 6 14 7
SEMITRANS® 4
Values
8 6 +14 7
Inverse Diode
B
8 6 +4, 7
B*=
B*=61)B
B=
6 +, ? C
8 6 +4, 7
Module
*=
8
Features
!!
"##"
! "!" "$%&' %#
%
( ) Typical Applications*
*
!! +,, -.
/" %"!
" %/! # 0 1,
-.
Remarks
2 3 4,, 5 %/ $& !
%
- "! # ! % "/
$& !& /"
"
%
5' + C
Characteristics
Symbol Conditions
IGBT
6 ' 6 1D 5
6 , ' 6 " 6 147' % ! "#/
8 6 14 7
min.
typ.
max.
D'4
4'4
('4
,'1
,'(
5
8 6 +14 7
,
5
8 6 14 7
+'4
8 6 +14 7
+':
8 6 147
1';
8 6 +147
!
6 +4 6 (,, 5' 6 +4 8 6 147"%
C
8 6 +147"%
6 14' 6 , # 6 + =.
!
*
/
!
/##
#
8 6 7
*
6 ,'4 F
*## 6 ,'4 F
##
*8"
! 6 (,,
6 (,,5
8 6 +14 7
6 > +4
Units
C
+':4
<'<
F
<';
4'D
F
<'1
<':4
D
<:
4'(
B
B
1';
B
+':
G
;;
H
D;
H
,',<
IJK
GA
1
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Characteristics
Symbol Conditions
B 6 B
6 (,, 5? 6 , B,
!B
®
SEMITRANS 4
Ultrafast IGBT Modules
**=
M!!
B 6 (,, 5
!!
6 , ? 6 (,, *8"2
! //
min.
typ.
max.
Units
C
1'<
1'4
8 6 +14 7"%
1'+
1'<
8 6 14 7"%
C
8 6 14 7
+'+
+'<
8 6 +14 7
,'L
+',4
8 6 14 7
1
1
F
8 6 +14 7
1
1'+
F
8 6 14 7
<:,
;<
5
A
1;
H
,',:
Module
N
SKM 800GA125D
IJK
*OEO
1,
!C' !
%"
*"
! /%
=
- =(
=
!
% =(=D
"6 14 7
,'+;
F
"6 +14 7
,'11
F
,',<;
IJK
<
4
1'4 +'+
4 1
<<,
Features
!! This is an electrostatic discharge sensitive device (ESDS), international standard
"##"
! "!" "$%&' %#
%
( ) Typical Applications*
*
!! +,, -.
/" %"!
" %/! # 0 1,
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
-.
Remarks
2 3 4,, 5 %/ $& !
%
- "! # ! % "/
$& !& /"
"
GA
2
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and diode
Fig. 10 CAL diode forward characteristic
Fig. 11 CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
UL Recognized
File no. E 63 532
2 4L
2 4L
5
5
28-04-2009 NOS
© by SEMIKRON