SKiM609GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 748 A Ts = 70 °C 608 A 600 A ICnom ICRM SKiM® 93 Trench IGBT Modules SKiM609GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1800 A -20 ... 20 V 10 µs -40 ... 175 °C Ts = 25 °C 139 A Ts = 70 °C 110 A 600 A A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor IFRM IFRM = 3xIFnom 1800 IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Ts = 25 °C 1397 A Ts = 70 °C 1107 A 1350 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 4050 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 6480 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Typical Applications* Visol • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Characteristics Symbol IGBT VCE(sat) Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C VCE0 rCE AC sinus 50 Hz, t = 1 min Conditions IC = 600 A VGE = 15 V chiplevel VGE = 15 V min. Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 1.8 2.0 m Tj = 150 °C VGE = 0 V VCE = 1200 V Cres QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C V Unit ICES VCE = 25 V VGE = 0 V 2500 max. VGE=VCE, IC = 24 mA Coes A °C typ. VGE(th) Cies 700 -40 ... 125 Tj = 25 °C 5 2.6 2.8 m 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C mA f = 1 MHz 35.20 nF f = 1 MHz 2.32 nF f = 1 MHz 1.88 nF 3400 nC 1.3 GAL © by SEMIKRON Rev. 4 – 23.07.2013 1 SKiM609GAL12E4 Characteristics Symbol Conditions td(on) Eoff VCC = 600 V IC = 600 A VGE = ±15 V RG on = 4.1 RG off = 4.1 di/dton = 5000 A/µs di/dtoff = 4400 A/µs Rth(j-s) per IGBT tr Eon td(off) tf ® SKiM 93 Trench IGBT Modules SKiM609GAL12E4 Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 rF IRRM Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Qrr Err Rth(j-s) rF Qrr Err Rth(j-s) Unit Tj = 150 °C 121 ns Tj = 150 °C 136 mJ Tj = 150 °C 808 ns Tj = 150 °C 100 ns Tj = 150 °C 83 mJ ns 0.068 K/W Tj = 25 °C 2.1 2.5 V Tj = 150 °C 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 4.3 5.6 6.4 m Tj = 150 °C 6.7 7.8 8.5 m Tj = 25 °C 153 A 15 µC 9 mJ 1.7 Tj = 150 °C 0.501 K/W 1.9 V 1.4 1.7 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 0.5 0.6 0.7 m 0.9 0.9 m Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 5300 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode LCE • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C max. 0.7 510 A 123 µC 39 mJ 0.048 K/W Module RCC'+EE' Remarks typ. 150 IF = 150 A Tj = 150 °C di/dtoff = 3300 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 600 A VGE = 0 V chiplevel VF0 IRRM min. Tj = 150 °C 10 terminal-chip 15 nH Ts = 25 °C 0.3 m Ts = 125 °C 0.5 m 1042 g w Temperature Sensor R100 TSensor = 100 °C (R25 = 5 k) 339 B100/125 R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 4096 K GAL 2 Rev. 4 – 23.07.2013 © by SEMIKRON SKiM609GAL12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 4 – 23.07.2013 3 SKiM609GAL12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 4 – 23.07.2013 © by SEMIKRON SKiM609GAL12E4 SKIM 93 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 4 – 23.07.2013 5