SKiM301MLI07E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 650 V Ts = 25 °C 256 A Ts = 70 °C 202 A 300 A ICnom ICRM VGES SKiM® 4 tpsc IGBT Modules SKiM301MLI07E4 Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V 600 A -20 ... 20 V 6 µs -40 ... 175 °C Ts = 25 °C 198 A Ts = 70 °C 154 A 300 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1476 A -40 ... 175 °C Ts = 25 °C 198 A Ts = 70 °C 154 A 200 A Tj Clamping diode IF Tj = 175 °C IFnom IFRM IFRM = 2xIFnom 400 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1476 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Typical Applications* Visol • UPS • 3 Level Inverter Characteristics Symbol IGBT Remarks • Case temperature limited to Tc = 125°C max, recommended Top = -40 … +150°C VCE(sat) VCE0 rCE AC sinus 50 Hz, t = 1 min Conditions IC = 300 A VGE = 15 V chiplevel VGE = 15 V min. Tj = 25 °C 1.45 1.90 V Tj = 150 °C 1.70 2.10 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.82 0.9 V Tj = 25 °C 1.8 3.0 m 2.9 4.0 m 5.8 6.4 V Tj = 150 °C VGE = 0 V VCE = 650 V Cres QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C V Unit ICES VCE = 25 V VGE = 0 V 2500 max. VGE=VCE, IC = 4.8 mA Coes A °C typ. VGE(th) Cies 400 -40 ... 125 5.1 Tj = 25 °C mA Tj = 150 °C mA f = 1 MHz 18.48 nF f = 1 MHz 1.16 nF f = 1 MHz 0.55 nF nC 1.0 MLI © by SEMIKRON Rev. 0 – 01.10.2013 1 SKiM301MLI07E4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-s) ® SKiM 4 Conditions VCE = 300 V IC = 300 A RG on = 2.7 RG off = 2.7 di/dton = 5566 A/µs di/dtoff = 1353 A/µs min. typ. max. Unit Tj = 150 °C 149.14 Tj = 150 °C 79.71 ns Tj = 150 °C 2.78 mJ Tj = 150 °C 420 ns Tj = 150 °C 180 ns Tj = 150 °C 17.48 mJ 0.3 K/W per IGBT ns Characteristics IGBT Modules SKiM301MLI07E4 Symbol Conditions Inverse diode VF = VEC IF = 300 A VGE = 0 V chiplevel VF0 min. typ. max. Unit Tj = 25 °C 1.6 2.0 V Tj = 150 °C 1.7 2.2 V 1.04 1.236 V 0.85 0.99 V 1.8 2.6 m 2.7 3.9 m Tj = 25 °C 0.95 Tj = 150 °C Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • UPS • 3 Level Inverter Tj = 25 °C rF 1.2 Tj = 150 °C A IRRM Qrr Err Rth(j-s) µC VGE = -15 V VR = 300 V per diode Clamping diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 mJ 0.45 Tj = 25 °C 1.4 1.8 V Tj = 150 °C 1.4 1.8 V 1.04 1.236 V 0.85 0.99 V 1.8 2.6 m 2.7 3.9 m Tj = 25 °C 0.95 Tj = 150 °C Tj = 25 °C rF K/W 1.2 Tj = 150 °C A IRRM Qrr Err Remarks Rth(j-s) • Case temperature limited to Tc = 125°C max, recommended Top = -40 … +150°C RCC'+EE' µC VGE = -15 V VR = 300 V per diode mJ 0.45 K/W Module LCE terminal-chip 22 nH Ts = 25 °C 1.35 m Ts = 125 °C 1.75 m Ms to heat sink (M5) 2 3 Nm Mt to terminals M6 4 5 Nm w 317 g 493 ± 5% 3550 ±2% K Temperature Sensor R100 B100/125 Tc=100°C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; MLI 2 Rev. 0 – 01.10.2013 © by SEMIKRON SKiM301MLI07E4 Fig. 3: Typ. IGBT output characteristic, inclusive RCC'+ EE' Fig. 6: Typ. turn-on /-off energy = f (IC) Fig. 8: Typ. turn-on /-off energy = f (RG) Fig. 10: Gate charge characteristic Fig. 12: Typ. switching times vs. gate resistor RG Fig. 14: Typ. switching times vs. IC © by SEMIKRON Rev. 0 – 01.10.2013 3 SKiM301MLI07E4 Fig. 15 Typ. IGBTs and DIODEs transient thermal impedence 4 Rev. 0 – 01.10.2013 © by SEMIKRON SKiM301MLI07E4 SKiM 4 MLI This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 01.10.2013 5