SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 587 A Ts = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 ... 20 V 6 µs -40 ... 175 °C Ts = 25 °C 441 A Ts = 70 °C 342 A 400 A VGES SKiM® 63 tpsc Trench IGBT Modules VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C Tj Inverse diode IF SKiM606GD066HD Tj = 175 °C IFnom Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2880 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol A °C 2500 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.45 1.85 V Tj = 150 °C 1.70 2.10 V VCE0 Tj = 25 °C 0.9 1 V Tj = 150 °C 0.85 0.9 V rCE Tj = 25 °C 0.9 1.4 mΩ IGBT VCE(sat) Typical Applications • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives AC sinus 50 Hz, t = 1 min 700 -40 ... 125 IC = 600 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C VGE(th) VGE=VCE, IC = 9.6 mA ICES VGE = 0 V VCE = 600 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf Eoff Rth(j-s) VCC = 300 V IC = 600 A RG on = 3 Ω RG off = 5 Ω di/dton = 5500 A/µs di/dtoff = 6200 A/µs Tj = 25 °C 5 1.4 2.0 mΩ 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C mA f = 1 MHz 36.96 nF f = 1 MHz 2.304 nF f = 1 MHz 1.096 nF 4800 nC 0.5 Ω Tj = 150 °C 150 ns Tj = 150 °C 120 ns Tj = 150 °C 16 mJ Tj = 150 °C 1400 ns Tj = 150 °C 75 ns Tj = 150 °C 53 per IGBT mJ 0.121 K/W GD © by SEMIKRON Rev. 2 – 26.08.2009 1 SKiM606GD066HD Characteristics Symbol Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF SKiM® 63 IRRM Qrr Trench IGBT Modules Err Rth(j-s) SKiM606GD066HD • IGBT 3 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor typ. max. Unit Tj = 25 °C 1.6 1.9 V Tj = 150 °C 1.7 1.9 V Tj = 25 °C 1 1.1 V Tj = 150 °C 0.85 0.95 V Tj = 25 °C 1.0 1.3 mΩ 1.4 1.6 mΩ Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 5600 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 300 V per diode 390 A 85 µC 21 mJ 0.209 K/W Module LCE RCC'+EE' Features min. Ms 9 terminal-chip nH 0.3 mΩ Ts = 125 °C 0.5 mΩ to heat sink (M4) to terminals (M6) Mt 13 Ts = 25 °C 2.5 4 Nm 3 5 Nm Nm w 750 g Temperature sensor R100 TSensor = 100 °C (R25 = 5 kΩ) 339 Ω B100/125 R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 4096 K Typical Applications • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives GD 2 Rev. 2 – 26.08.2009 © by SEMIKRON SKiM606GD066HD Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 26.08.2009 3 SKiM606GD066HD Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 26.08.2009 © by SEMIKRON SKiM606GD066HD SKIM® 63 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 26.08.2009 5