SKM800GA126D DataSheet

SKM800GA126D
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
1200
V
Tc = 25 °C
910
A
Tc = 80 °C
635
A
600
A
ICnom
ICRM
SEMITRANS® 4
Trench IGBT Modules
SKM800GA126D
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V
VGE ≤ 15 V
VCES ≤ 1200 V
1200
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
703
A
Tc = 80 °C
480
A
600
A
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
IFnom
Features
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
IFRM
IFRM = 2xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
4680
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tstg
Visol
A
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
Remarks
• IDC ≤ 500A limited by terminals
AC sinus 50 Hz, t = 1 min
500
-40 ... 125
VCE0
Conditions
IC = 600 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.70
2.10
V
Tj = 125 °C
2.00
2.48
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
1.17
1.50
mΩ
1.83
2.3
mΩ
5.8
6.5
V
5
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 24 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 °C
VCC = 600 V
IC = 600 A
VGE = +15/-15 V
RG on = 3 Ω
RG off = 3 Ω
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Tj = 125 °C
5
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
43.1
nF
f = 1 MHz
2.25
nF
f = 1 MHz
1.95
nF
5200
nC
1.3
Tj = 125 °C
Ω
220
ns
Tj = 125 °C
100
ns
Tj = 125 °C
65
mJ
Tj = 125 °C
860
ns
Tj = 125 °C
135
ns
Tj = 125 °C
95
mJ
per IGBT
0.042
K/W
GA
© by SEMIKRON
Rev. 1.0 – 20.07.2015
1
SKM800GA126D
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 600 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMITRANS® 4
Trench IGBT Modules
SKM800GA126D
IRRM
Qrr
Err
Rth(j-c)
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
typ.
max.
Unit
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
1.00
1.17
mΩ
Tj = 125 °C
IF = 600 A
Tj = 125 °C
di/dtoff = 6000 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 600 V
per diode
1.33
1.50
mΩ
15
nH
TC = 25 °C
0.18
mΩ
TC = 125 °C
0.22
mΩ
chiplevel
540
A
125
µC
59
mJ
0.09
K/W
Module
LCE
RCC'+EE'
Features
min.
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
to terminals
0.038
K/W
3
0.02
5
Nm
M6
2.5
5
Nm
M4
1.1
2
Nm
330
g
w
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• IDC ≤ 500A limited by terminals
GA
2
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM800GA126D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 20.07.2015
3
SKM800GA126D
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM800GA126D
SEMITRANS 4
GA
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 20.07.2015
5