SKM800GA126D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 910 A Tc = 80 °C 635 A 600 A ICnom ICRM SEMITRANS® 4 Trench IGBT Modules SKM800GA126D VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 1200 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 703 A Tc = 80 °C 480 A 600 A Tj = 125 °C Inverse diode IF Tj = 150 °C IFnom Features • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders IFRM IFRM = 2xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 4680 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol A °C 4000 V Characteristics Symbol IGBT VCE(sat) Remarks • IDC ≤ 500A limited by terminals AC sinus 50 Hz, t = 1 min 500 -40 ... 125 VCE0 Conditions IC = 600 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.70 2.10 V Tj = 125 °C 2.00 2.48 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 1.17 1.50 mΩ 1.83 2.3 mΩ 5.8 6.5 V 5 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 24 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 20 V RGint Tj = 25 °C VCC = 600 V IC = 600 A VGE = +15/-15 V RG on = 3 Ω RG off = 3 Ω td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 43.1 nF f = 1 MHz 2.25 nF f = 1 MHz 1.95 nF 5200 nC 1.3 Tj = 125 °C Ω 220 ns Tj = 125 °C 100 ns Tj = 125 °C 65 mJ Tj = 125 °C 860 ns Tj = 125 °C 135 ns Tj = 125 °C 95 mJ per IGBT 0.042 K/W GA © by SEMIKRON Rev. 1.0 – 20.07.2015 1 SKM800GA126D Characteristics Symbol Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 4 Trench IGBT Modules SKM800GA126D IRRM Qrr Err Rth(j-c) • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532 typ. max. Unit Tj = 25 °C 1.60 1.80 V Tj = 125 °C 1.60 1.80 V Tj = 25 °C 1 1.1 V Tj = 125 °C 0.8 0.9 V Tj = 25 °C 1.00 1.17 mΩ Tj = 125 °C IF = 600 A Tj = 125 °C di/dtoff = 6000 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode 1.33 1.50 mΩ 15 nH TC = 25 °C 0.18 mΩ TC = 125 °C 0.22 mΩ chiplevel 540 A 125 µC 59 mJ 0.09 K/W Module LCE RCC'+EE' Features min. terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt to terminals 0.038 K/W 3 0.02 5 Nm M6 2.5 5 Nm M4 1.1 2 Nm 330 g w Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • IDC ≤ 500A limited by terminals GA 2 Rev. 1.0 – 20.07.2015 © by SEMIKRON SKM800GA126D Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1.0 – 20.07.2015 3 SKM800GA126D Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1.0 – 20.07.2015 © by SEMIKRON SKM800GA126D SEMITRANS 4 GA This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1.0 – 20.07.2015 5