SKM195GB126D DataSheet

SKM195GB126D
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
1200
V
Tc = 25 °C
220
A
Tc = 80 °C
164
A
150
A
ICnom
ICRM
SEMITRANS® 2
Trench IGBT Modules
SKM195GB126D
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V
VGE ≤ 15 V
VCES ≤ 1200 V
300
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
143
A
Tc = 80 °C
98
A
100
A
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
IFnom
Features
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
IFRM
IFRM = 2xIFnom
200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1110
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
200
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 150 A
VGE = 15 V
chiplevel
chiplevel
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 6 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 °C
VCC = 600 V
IC = 150 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
min.
typ.
max.
Unit
Tj = 25 °C
1.71
2.10
V
Tj = 125 °C
2.00
2.45
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
4.7
6
mΩ
7.3
9
mΩ
5.8
6.5
V
2
mA
Tj = 125 °C
5
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
10.8
nF
f = 1 MHz
0.56
nF
f = 1 MHz
0.49
nF
1380
nC
5
Tj = 125 °C
Ω
280
ns
Tj = 125 °C
50
ns
Tj = 125 °C
16
mJ
Tj = 125 °C
560
ns
Tj = 125 °C
70
ns
Tj = 125 °C
24.5
mJ
per IGBT
0.16
K/W
GB
© by SEMIKRON
Rev. 1.0 – 20.07.2015
1
SKM195GB126D
Characteristics
Symbol
Conditions
typ.
max.
Unit
Tj = 25 °C
2.00
2.50
V
Tj = 125 °C
1.80
2.30
V
Tj = 25 °C
1.1
1.45
V
Tj = 125 °C
0.85
1.2
V
Tj = 25 °C
9
11
mΩ
Tj = 125 °C
IF = 100 A
Tj = 125 °C
di/dtoff = 2200 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 600 V
per diode
9.5
11
mΩ
30
nH
TC = 25 °C
0.75
mΩ
TC = 125 °C
1
mΩ
Inverse diode
VF = VEC IF = 100 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMITRANS® 2
Trench IGBT Modules
SKM195GB126D
IRRM
Qrr
Err
Rth(j-c)
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
86
A
17
µC
5.8
mJ
0.32
K/W
Module
LCE
RCC'+EE'
Features
chiplevel
min.
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
0.04
to terminals M5
0.05
K/W
3
5
Nm
2.5
5
Nm
Nm
w
160
g
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
GB
2
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM195GB126D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 20.07.2015
3
SKM195GB126D
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM195GB126D
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 20.07.2015
5