SEMIKRON SKM300GB12T4

SKM300GB12T4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1200
V
Tc = 25 °C
422
A
Tc = 80 °C
324
A
300
A
ICnom
ICRM
SEMITRANS®3
Fast IGBT4 Modules
ICRM = 3xICnom
900
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
353
A
Tc = 80 °C
264
A
300
A
VGES
tpsc
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
Tj
Inverse diode
IF
SKM300GB12T4
Tj = 175 °C
IFnom
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
IFRM
IFRM = 3xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1548
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
A
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.1
V
Tj = 150 °C
2.25
2.45
V
VCE0
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
rCE
Tj = 25 °C
3.5
4.0
mΩ
IGBT
VCE(sat)
Remarks
AC sinus 50Hz, t = 1 min
500
-40 ... 125
IC = 300 A
VGE = 15 V
chiplevel
VGE = 15 V
Tj = 150 °C
VGE(th)
VGE=VCE, IC = 12 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
Eoff
VCC = 600 V
IC = 300 A
VGE = ±15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
di/dton = 7500 A/µs
di/dtoff = 3350 A/µs
Rth(j-c)
per IGBT
tr
Eon
td(off)
tf
Tj = 25 °C
5
5.2
5.5
mΩ
5.8
6.5
V
0.1
0.3
mA
Tj = 150 °C
mA
f = 1 MHz
17.6
nF
f = 1 MHz
1.16
nF
f = 1 MHz
0.94
nF
1700
nC
2.5
Ω
Tj = 150 °C
200
ns
Tj = 150 °C
44
ns
Tj = 150 °C
27
mJ
Tj = 150 °C
450
ns
Tj = 150 °C
90
ns
Tj = 150 °C
29
mJ
0.11
K/W
GB
© by SEMIKRON
Rev. 0 – 19.02.2009
1
SKM300GB12T4
Characteristics
Symbol
SEMITRANS®3
rF
IRRM
Qrr
Fast IGBT4 Modules
Conditions
Inverse diode
VF = VEC IF = 300 A
VGE = 0 V
chip
VF0
Err
Rth(j-c)
min.
typ.
max.
Unit
Tj = 25 °C
2.17
2.49
V
Tj = 150 °C
2.11
2.42
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
2.9
3.3
mΩ
4.0
4.4
mΩ
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 7300 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per diode
345
A
54
µC
23
mJ
0.17
K/W
Module
SKM300GB12T4
LCE
RCC'+EE'
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
15
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
20
nH
TC = 25 °C
0.25
mΩ
TC = 125 °C
0.5
mΩ
0.02
to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
GB
2
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM300GB12T4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 19.02.2009
3
SKM300GB12T4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: CAL diode forward characteristic
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM300GB12T4
Semitrans 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 0 – 19.02.2009
5