SKM400GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS® 3 IGBT4 Modules SKM400GB12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1200 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 440 A Tc = 80 °C 329 A 400 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1980 A -40 ... 175 °C Tj Module It(RMS) Visol AC sinus 50Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° 80 °C Tstg VCE0 rCE Conditions IC = 400 A VGE = 15 V chiplevel VGE = 15 V min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 2.50 2.88 m 3.75 4.00 m 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C VGE(th) VGE=VCE, IC = 15.2 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 400 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 9700 A/µs di/dtoff = 4300 A/µs td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 25 °C 5 Tj = 150 °C mA f = 1 MHz 24.6 nF f = 1 MHz 1.62 nF f = 1 MHz 1.38 nF 2260 nC 1.9 Tj = 150 °C 242 ns Tj = 150 °C 47 ns Tj = 150 °C 33 mJ Tj = 150 °C 580 ns Tj = 150 °C 101 ns Tj = 150 °C 56 mJ per IGBT 0.072 K/W GB © by SEMIKRON Rev. 3 – 29.10.2010 1 SKM400GB12E4 Characteristics Symbol Conditions Inverse diode VF = VEC IF = 400 A VGE = 0 V chip VF0 rF SEMITRANS® 3 IGBT4 Modules SKM400GB12E4 IRRM Qrr Err Rth(j-c) • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) • UL recognized, file no. E63532 typ. max. Unit Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 2.3 2.5 m 3.1 3.4 m Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 8800 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode 450 A 68 µC 30.5 mJ 0.14 K/W Module LCE RCC'+EE' Features min. 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 20 nH TC = 25 °C 0.25 m TC = 125 °C 0.5 m 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g Typical Applications* • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GB 2 Rev. 3 – 29.10.2010 © by SEMIKRON SKM400GB12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 29.10.2010 3 SKM400GB12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 3 – 29.10.2010 © by SEMIKRON SKM400GB12E4 SEMITRANS 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 3 – 29.10.2010 5