SEMIKRON SEMIX403GB128DS

SEMiX403GB128Ds
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 150 °C
1200
V
Tc = 25 °C
418
A
Tc = 80 °C
298
A
225
A
ICnom
ICRM
SEMiX® 3s
SPT IGBT Modules
ICRM = 2xICnom
450
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
342
A
Tc = 80 °C
235
A
225
A
VGES
tpsc
VCC = 600 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 125 °C
Tj
Inverse diode
IF
SEMiX403GB128Ds
Tj = 150 °C
IFnom
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
IFRM
IFRM = 2xIFnom
450
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2000
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Typical Applications*
Characteristics
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.9
2.3
V
Tj = 125 °C
2.1
2.55
V
Tj = 25 °C
1
1.15
V
Tj = 125 °C
0.9
1.05
V
Tj = 25 °C
4.0
5.1
mΩ
5.3
6.7
mΩ
5
6.5
V
0.1
0.3
mA
IGBT
VCE(sat)
IC = 225 A
VGE = 15 V
chiplevel
VCE0
rCE
VGE = 15 V
VGE(th)
VGE=VCE, IC = 9 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
td(off)
tf
VCC = 600 V
IC = 225 A
RG on = 4 Ω
RG off = 4 Ω
Eoff
Rth(j-c)
Tj = 125 °C
4.5
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
20.8
nF
f = 1 MHz
1.38
nF
f = 1 MHz
0.87
nF
2130
nC
1.67
Ω
Tj = 125 °C
145
ns
Tj = 125 °C
60
ns
Tj = 125 °C
20
mJ
Tj = 125 °C
575
ns
Tj = 125 °C
70
ns
Tj = 125 °C
23
per IGBT
mJ
0.075
K/W
GB
© by SEMIKRON
Rev. 9 – 16.12.2009
1
SEMiX403GB128Ds
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 225 A
VGE = 0 V
chip
VF0
rF
SEMiX® 3s
IRRM
Qrr
SPT IGBT Modules
Err
Rth(j-c)
SEMiX403GB128Ds
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Tj = 25 °C
Tj = 125 °C
typ.
max.
Unit
2.0
2.50
V
1.8
2.3
V
Tj = 25 °C
0.75
1.1
1.45
V
Tj = 125 °C
0.5
0.85
1.2
V
Tj = 25 °C
3.3
4.0
4.7
mΩ
4.2
4.9
mΩ
Tj = 125 °C
IF = 225 A
Tj = 125 °C
di/dtoff = 4950 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 600 V
per diode
3.6
260
A
29
µC
10
mJ
0.13
K/W
Module
LCE
RCC'+EE'
Features
min.
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
20
nH
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.04
to terminals (M6)
Mt
K/W
3
5
Nm
2.5
5
Nm
Nm
w
300
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
493 ± 5%
Ω
3550
±2%
K
GB
2
Rev. 9 – 16.12.2009
© by SEMIKRON
SEMiX403GB128Ds
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 9 – 16.12.2009
3
SEMiX403GB128Ds
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 9 – 16.12.2009
© by SEMIKRON
SEMiX403GB128Ds
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 9 – 16.12.2009
5
SEMiX403GB128Ds
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
6
Rev. 9 – 16.12.2009
© by SEMIKRON