SEMiX303GB12E4p DataSheet

SEMiX303GB12E4p
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
469
A
Tc = 80 °C
361
A
300
A
ICnom
ICRM
SEMiX® 3p
VGES
tpsc
Trench IGBT Modules
Tj
SEMiX303GB12E4p
IF
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• UL recognized, file no. E63532
Typical Applications*
VRRM
Tj = 25 °C
Tj = 175 °C
µs
-40 ... 175
°C
1200
V
Tc = 25 °C
378
A
Tc = 80 °C
284
A
300
A
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1485
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Remarks
IGBT
Symbol
VCE(sat)
VCE0
rCE
Conditions
IC = 300 A
VGE = 15 V
chiplevel
chiplevel
VGE = 15 V
chiplevel
min.
V
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.20
2.40
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
3.3
3.8
mΩ
Tj = 150 °C
5
5.3
mΩ
5.8
6.5
V
4
mA
VGE=VCE, IC = 11.4 mA
Cres
4000
Unit
VGE = 0 V
VCE = 1200 V
Coes
A
°C
max.
ICES
VCE = 25 V
VGE = 0 V
600
-40 ... 125
typ.
VGE(th)
Cies
5
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
18.5
nF
f = 1 MHz
1.22
nF
f = 1 MHz
1.04
nF
QG
VGE = - 8 V...+ 15 V
1695
nC
RGint
2.50
Ω
Rth(j-c)
Tj = 25 °C
VCC = 600 V
IC = 300 A
VGE = +15/-15 V
RG on = 1.3 Ω
RG off = 1.3 Ω
di/dton = 5600 A/µs
di/dtoff = 2400 A/µs
du/dt = 3500 V/µs
Ls = 21 nH
per IGBT
Rth(c-s)
per IGBT (λgrease=0.81 W/(m*K))
0.03
K/W
Rth(c-s)
per IGBT, pre-applied phase change
material
0.021
K/W
td(on)
tr
Eon
td(off)
tf
Eoff
© by SEMIKRON
10
IFRM = 3xIFnom
Characteristics
GB
V
IFRM
• AC inverter drives
• UPS
• Renewable energy systems
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
A
Inverse diode
IFnom
Features
900
-20 ... 20
Tj = 150 °C
180
ns
Tj = 150 °C
55
ns
Tj = 150 °C
23
mJ
Tj = 150 °C
470
ns
Tj = 150 °C
110
ns
Tj = 150 °C
38
mJ
Rev. 4.0 – 27.05.2015
0.094
K/W
1
SEMiX303GB12E4p
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 300 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMiX® 3p
Trench IGBT Modules
SEMiX303GB12E4p
chiplevel
min.
Tj = 25 °C
Tj = 150 °C
typ.
max.
Unit
2.20
2.52
V
2.15
2.47
V
Tj = 25 °C
1.1
1.3
1.5
V
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
2.7
3
3.4
mΩ
4.2
4.6
mΩ
Rth(j-c)
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 6000 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
0.046
K/W
Rth(c-s)
per diode, pre-applied phase change
material
0.037
K/W
IRRM
Qrr
Err
3.5
330
A
50
µC
23
mJ
0.15
K/W
Module
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Rth(c-s)2
Ms
res. terminal-chip
20
nH
TC = 25 °C
1.2
mΩ
TC = 125 °C
1.65
mΩ
0.009
K/W
0.014
K/W
0.011
K/W
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
including thermal coupling,
Ts underneath module, pre-applied
phase change material
to heat sink (M5)
to terminals (M6)
Mt
3
6
Nm
3
6
Nm
Nm
w
350
g
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
493 ± 5%
Ω
3550
±2%
K
GB
2
Rev. 4.0 – 27.05.2015
© by SEMIKRON
SEMiX303GB12E4p
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4.0 – 27.05.2015
3
SEMiX303GB12E4p
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 4.0 – 27.05.2015
© by SEMIKRON
SEMiX303GB12E4p
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4.0 – 27.05.2015
5