SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX® 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 292 A Tc = 80 °C 202 A 200 A VGES tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Tj Inverse diode IF SEMiX302GB126HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFRM = 2xIFnom 400 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1300 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.7 2.1 V Tj = 125 °C 2 2.45 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 3.5 4.5 mΩ IGBT Remarks • Case temperatur limited to TC=125°C max. • Not for new design VCE(sat) IC = 200 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V VGE(th) VGE=VCE, IC = 8 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 200 A td(on) tr Eon RG on = 2.8 Ω RG off = 2.8 Ω Tj = 125 °C 5 Tj = 25 °C 5.5 6.8 mΩ 5.8 6.5 V 0.1 0.3 mA Tj = 125 °C mA f = 1 MHz 14.4 nF f = 1 MHz 0.75 nF f = 1 MHz 0.65 nF 1600 nC 3.75 Ω Tj = 125 °C 320 ns Tj = 125 °C 50 ns Tj = 125 °C 30 mJ Tj = 125 °C 600 ns tf Tj = 125 °C 100 ns Eoff Tj = 125 °C 26 mJ td(off) Rth(j-c) per IGBT 0.12 K/W GB © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX302GB126HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 200 A VGE = 0 V chip VF0 rF SEMiX® 2s IRRM Qrr Trench IGBT Modules Err Rth(j-c) SEMiX302GB126HDs • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Tj = 25 °C Tj = 125 °C typ. max. Unit 1.6 1.80 V 1.6 1.8 V Tj = 25 °C 0.9 1 1.1 V Tj = 125 °C 0.7 0.8 0.9 V Tj = 25 °C 2.5 3.0 3.5 mΩ 4.0 4.5 mΩ Tj = 125 °C IF = 200 A Tj = 125 °C di/dtoff = 5900 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode 3.5 290 A 55 µC 22.5 mJ 0.19 K/W Module LCE RCC'+EE' Features min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 18 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.045 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 250 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K Remarks • Case temperatur limited to TC=125°C max. • Not for new design GB 2 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX302GB126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 16.04.2010 3 SEMiX302GB126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX302GB126HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 16.04.2010 5