SKM800GA125D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 760 A Tc = 80 °C 530 A 600 A ICnom ICRM SEMITRANS® 4 VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 1200 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 720 A Tc = 80 °C 500 A 600 A Tj = 125 °C Inverse diode SKM800GA125D IF Tj = 150 °C IFnom Features • Homogeneous Si • NPT-IGBT • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC Typical Applications* • Resonant inverters up to 100 kHz • Inductive heating • Electronic welders at fsw > 20 kHz IFRM IFRM = 2xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 5760 A -40 ... 150 °C Tj Module It(RMS) Visol AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) Remarks • IDC ≤ 500 A limited by terminals • Take care of over-voltage caused by stray inductances Tterminal = 80 °C Tstg VCE0 Conditions IC = 600 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 3.20 3.70 V Tj = 125 °C 4.00 4.80 V Tj = 25 °C 1.5 1.75 V Tj = 125 °C 1.7 1.95 V Tj = 25 °C 2.83 3.25 mΩ 3.83 4.75 mΩ 5.5 6.5 V 0.6 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 24 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 20 V RGint Tj = 25 °C VCC = 600 V IC = 600 A VGE = +/-15 V RG on = 0.5 Ω RG off = 0.5 Ω td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 125 °C 4.5 Tj = 25 °C mA f = 1 MHz 37.2 nF f = 1 MHz 5.6 nF f = 1 MHz 2.80 nF 4200 nC 0.5 Tj = 125 °C Ω 480 ns Tj = 125 °C 116 ns Tj = 125 °C 88 mJ Tj = 125 °C 666 ns Tj = 125 °C 58 ns Tj = 125 °C 48 mJ per IGBT 0.03 K/W GA © by SEMIKRON Rev. 1 – 21.08.2014 1 SKM800GA125D Characteristics Symbol Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 4 IRRM Qrr Err Rth(j-c) SKM800GA125D • Homogeneous Si • NPT-IGBT • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC IF = 600 A VGE = ±15 V VCC = 600 V per diode typ. max. Unit Tj = 25 °C 2.3 2.58 V Tj = 125 °C 1.87 2.38 V Tj = 25 °C 1.1 1.45 V Tj = 125 °C 0.85 1.2 V Tj = 25 °C 1.6 1.9 mΩ Tj = 125 °C 1.7 2 mΩ Tj = 125 °C 370 Tj = 125 °C 83 µC Tj = 125 °C 28 mJ A 0.07 K/W Module LCE RCC'+EE' Features chiplevel min. 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt to terminals 20 nH TC = 25 °C 0.18 mΩ TC = 125 °C 0.22 mΩ 0.038 K/W 3 0.02 5 Nm M6 2.5 5 Nm M4 1.1 2 Nm 330 g w Typical Applications* • Resonant inverters up to 100 kHz • Inductive heating • Electronic welders at fsw > 20 kHz Remarks • IDC ≤ 500 A limited by terminals • Take care of over-voltage caused by stray inductances GA 2 Rev. 1 – 21.08.2014 © by SEMIKRON SKM800GA125D Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 21.08.2014 3 SKM800GA125D Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1 – 21.08.2014 © by SEMIKRON SKM800GA125D SEMITRANS 4 GA This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 21.08.2014 5