ROHM QS5U33

QS5U33
Transistor
4V Drive Pch+SBD MOSFET
QS5U33
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
zDimensions (Unit : mm)
TSMT5
1.0MAX
2.9
1.9
0.95 0.95
(5)
(4)
(2)
(3)
0.7
1.6
2.8
zFeatures
1) The QS5U33 combines Pch MOSFET with
a Schottky barrier diode in TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (4V).
4) Built-in schottky barrier diode has low forward voltage.
0.85
0.4
0~0.1
0.3~0.6
(1)
0.16
Each lead has same dimensions
Abbreviated symbol : U33
zApplications
Load switch, DC/DC conversion
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
zEquivalent circuit
Taping
(5)
(4)
TR
3000
∗2
QS5U33
∗1
(1)
∗1 ESD protection diode
∗2 Body diode
(2)
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
1/4
QS5U33
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Channel temperature
Power dissipation
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
−30
±20
±2.0
±8.0
−0.75
−8.0
150
0.9
Unit
V
V
A
A
A
A
°C
W /ELEMENT
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Symbol
VRM
VR
IF
IFSM ∗2
Tj
Limits
25
20
1.0
3.0
150
Unit
V
V
A
A
°C
0.7
W /ELEMENT
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
<Di >
PD
Power dispation
∗3
<MOSFET AND Di >
Parameter
Symbol
PD ∗3
Tstg
Total power dissipation
Range of strage temperature
Limits
Unit
1.25
−55 to +150
W / TOTAL
°C
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz • 1cyc. ∗3 Mounted on a ceramic board.
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min.
Gate-source leakage
−
IGSS
Drain-source breakdown voltage V(BR) DSS −30
Zero gate voltage drain current
IDSS
−
Gate threshold voltage
VGS (th) −1.0
−
Static drain-source on-starte
∗
RDS (on)
−
resistance
−
Forward transfer admittance
Yfs ∗ 1.4
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance
Crss
−
Turn-on delay time
td (on) ∗
−
Rise time
−
tr ∗
Turn-off delay time
td (off) ∗
−
Fall time
−
tf ∗
Total gate charge
Qg
∗
−
3.4
−
nC
Gate-source charge
Qgs
∗
−
1.0
−
nC
∗
−
1.3
−
nC
Conditions
VGS= ±20V, VDS= 0V
ID= −1mA, VGS= 0V
VDS= −30V, VGS= 0V
VDS= −10V, ID= −1mA
ID= −2A, VGS= −10V
ID= −1A, VGS= −4.5V
ID= −1A, VGS= −4.0V
VDS= −10V, ID= −1A
VDS= −10V
VGS= 0V
f=1MHz
VDD −15V
VGS= −10V
ID= −1A
RL 15Ω
RG 10Ω
VDD −15V
VGS= −5V
ID= −2A
RL 7.5Ω
RG 10Ω
Symbol
VSD
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS= −0.75V , VGS= 0V
Symbol
VF
Min.
−
Typ.
−
Max.
0.45
Unit
V
IF= 1.0V
IR
−
−
200
µA
VR= 20V
Gate-drain charge
Qgd
Typ.
−
−
−
−
95
145
160
−
310
55
45
7
6
25
6
Max.
±10
−
−1
−2.5
135
205
225
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
∗ Pulsed
<MOSFET> Body diode (Source-drain)
Parameter
Forward voltage
<Di>
Parameter
Forward voltage
Reverse current
Conditions
2/4
QS5U33
Transistor
10
Static Drain−Source On−State Resistance
RDS(on)[mΩ]
1
Ta=125°C
75°C
25°C
−25°C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Ta=125°C
75°C
25°C
−25°C
10
0.1
4.0
1
Gate−Source Voltage : −VGS[V]
Ta=125°C
75°C
25°C
−25°C
1
Ta=25 C
f=1MHZ
VGS=0V
Ciss
100
Coss
ID=−1A
−2A
250
200
150
100
0
5
10
0.1
1
10
100
Drain−Source Voltage : −VDS[V]
Fig.7 Typical Capactitance
vs.Drain−Source Voltage
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0
15
10
Ta=25 C
VDD=−15V
VGS=−10V
RG=10Ω
Pulsed
tf
100
td(off)
tr
10
1
0.01
td(on)
1
Drain Current : −ID[A]
Fig.8 Switching Characteristics
1.5
10
Ta=25 C
VDD=−15V
ID=−1A
RG=10Ω
Pulsed
8
6
4
2
0
0.1
1.0
Fig.6 Reverse Drain Current
vs. Source-Drain Current
Fig.5 Static Drain−Source On−State
Resistance vs.Gate−Source Voltage
1000
0.5
Source−Drain Voltage : −VSD[V]
Gate−Source Voltage : −VGS[V]
Crss
10
0.01
VGS=0V
Pulsed
50
0
Switching Time : t [ns]
Capacitance : C [pF]
Fig.3 Static Drain−Source On−State
Resistance vs.Drain Current
10
300
10
Fig.4 Static Drain−Source On−State
Resistance vs.Drain−Current
10
Ta=25 C
Pulsed
350
Drain Current : −ID[A]
1000
1
Drain Current : −ID[A]
400
VGS=−4.0V
Pulsed
10
0.1
10
0.1
10
Fig.2 Static Drain−Source On−State
Resistance vs.Drain Current
Static Drain−Source On−State Resistance
RDS(on)[mΩ]
Static Drain−Source On−State Resistance
RDS(on)[mΩ]
100
Ta=125°C
75°C
25°C
−25°C
Drain Current : −ID[A]
Fig.1 Typical Transfer Characteristics
1000
VGS=−4.5V
Pulsed
100
100
Reverse Drain Current : −IDR[A]
0.1
VGS=−10V
Pulsed
Gate-Source Voltage: -VGS [V]
Drain Current : −ID (A)
1000
1000
VDS=−10V
Pulsed
0.0001
Static Drain−Source On−State Resistance
RDS(on)[mΩ]
zElectrical characteristic curves
0
1
2
3
4
6
5
Total Gate Charge : Qg[nC]
Fig.9 Dynamic Input Characteristics
3/4
QS5U33
Transistor
100
Ta=125°C
75°C
25°C
−20°C
100
125°C
Reverse Current : IR[A]
Forward Current : IF [mA]
1000
10
10
75°C
1
0.1
25°C
0.01
1
−20°C
0.001
0.1
0.0001
0
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage :VF [V]
Fig.10 Forward Temperature Characteristics
0
10
20
30
40
Reverse Voltage : VR[V]
Fig.11 Reverse Temperature Characteristics
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0