QS5U33 Transistor 4V Drive Pch+SBD MOSFET QS5U33 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions (Unit : mm) TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U33 combines Pch MOSFET with a Schottky barrier diode in TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (4V). 4) Built-in schottky barrier diode has low forward voltage. 0.85 0.4 0~0.1 0.3~0.6 (1) 0.16 Each lead has same dimensions Abbreviated symbol : U33 zApplications Load switch, DC/DC conversion zPackaging specifications Package Type Code Basic ordering unit (pieces) zEquivalent circuit Taping (5) (4) TR 3000 ∗2 QS5U33 ∗1 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain ∗ A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. 1/4 QS5U33 Transistor zAbsolute maximum ratings (Ta=25°C) <MOSFET> Channel temperature Power dissipation Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 Limits −30 ±20 ±2.0 ±8.0 −0.75 −8.0 150 0.9 Unit V V A A A A °C W /ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Symbol VRM VR IF IFSM ∗2 Tj Limits 25 20 1.0 3.0 150 Unit V V A A °C 0.7 W /ELEMENT Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed <Di > PD Power dispation ∗3 <MOSFET AND Di > Parameter Symbol PD ∗3 Tstg Total power dissipation Range of strage temperature Limits Unit 1.25 −55 to +150 W / TOTAL °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz • 1cyc. ∗3 Mounted on a ceramic board. zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −1.0 − Static drain-source on-starte ∗ RDS (on) − resistance − Forward transfer admittance Yfs ∗ 1.4 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time − tr ∗ Turn-off delay time td (off) ∗ − Fall time − tf ∗ Total gate charge Qg ∗ − 3.4 − nC Gate-source charge Qgs ∗ − 1.0 − nC ∗ − 1.3 − nC Conditions VGS= ±20V, VDS= 0V ID= −1mA, VGS= 0V VDS= −30V, VGS= 0V VDS= −10V, ID= −1mA ID= −2A, VGS= −10V ID= −1A, VGS= −4.5V ID= −1A, VGS= −4.0V VDS= −10V, ID= −1A VDS= −10V VGS= 0V f=1MHz VDD −15V VGS= −10V ID= −1A RL 15Ω RG 10Ω VDD −15V VGS= −5V ID= −2A RL 7.5Ω RG 10Ω Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS= −0.75V , VGS= 0V Symbol VF Min. − Typ. − Max. 0.45 Unit V IF= 1.0V IR − − 200 µA VR= 20V Gate-drain charge Qgd Typ. − − − − 95 145 160 − 310 55 45 7 6 25 6 Max. ±10 − −1 −2.5 135 205 225 − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns ∗ Pulsed <MOSFET> Body diode (Source-drain) Parameter Forward voltage <Di> Parameter Forward voltage Reverse current Conditions 2/4 QS5U33 Transistor 10 Static Drain−Source On−State Resistance RDS(on)[mΩ] 1 Ta=125°C 75°C 25°C −25°C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Ta=125°C 75°C 25°C −25°C 10 0.1 4.0 1 Gate−Source Voltage : −VGS[V] Ta=125°C 75°C 25°C −25°C 1 Ta=25 C f=1MHZ VGS=0V Ciss 100 Coss ID=−1A −2A 250 200 150 100 0 5 10 0.1 1 10 100 Drain−Source Voltage : −VDS[V] Fig.7 Typical Capactitance vs.Drain−Source Voltage 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0 15 10 Ta=25 C VDD=−15V VGS=−10V RG=10Ω Pulsed tf 100 td(off) tr 10 1 0.01 td(on) 1 Drain Current : −ID[A] Fig.8 Switching Characteristics 1.5 10 Ta=25 C VDD=−15V ID=−1A RG=10Ω Pulsed 8 6 4 2 0 0.1 1.0 Fig.6 Reverse Drain Current vs. Source-Drain Current Fig.5 Static Drain−Source On−State Resistance vs.Gate−Source Voltage 1000 0.5 Source−Drain Voltage : −VSD[V] Gate−Source Voltage : −VGS[V] Crss 10 0.01 VGS=0V Pulsed 50 0 Switching Time : t [ns] Capacitance : C [pF] Fig.3 Static Drain−Source On−State Resistance vs.Drain Current 10 300 10 Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current 10 Ta=25 C Pulsed 350 Drain Current : −ID[A] 1000 1 Drain Current : −ID[A] 400 VGS=−4.0V Pulsed 10 0.1 10 0.1 10 Fig.2 Static Drain−Source On−State Resistance vs.Drain Current Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] 100 Ta=125°C 75°C 25°C −25°C Drain Current : −ID[A] Fig.1 Typical Transfer Characteristics 1000 VGS=−4.5V Pulsed 100 100 Reverse Drain Current : −IDR[A] 0.1 VGS=−10V Pulsed Gate-Source Voltage: -VGS [V] Drain Current : −ID (A) 1000 1000 VDS=−10V Pulsed 0.0001 Static Drain−Source On−State Resistance RDS(on)[mΩ] zElectrical characteristic curves 0 1 2 3 4 6 5 Total Gate Charge : Qg[nC] Fig.9 Dynamic Input Characteristics 3/4 QS5U33 Transistor 100 Ta=125°C 75°C 25°C −20°C 100 125°C Reverse Current : IR[A] Forward Current : IF [mA] 1000 10 10 75°C 1 0.1 25°C 0.01 1 −20°C 0.001 0.1 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage :VF [V] Fig.10 Forward Temperature Characteristics 0 10 20 30 40 Reverse Voltage : VR[V] Fig.11 Reverse Temperature Characteristics 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0