ROHM EM6K6

EM6K6
Transistor
1.8V Drive Nch+Nch MOSFET
EM6K6
zStructure
Silicon N-channel
MOSFET
zDimensions (Unit : mm)
EMT6
zApplications
Switching
zFeatures
1) The MOSFET elements are independent,
eliminating mutual interference.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
Each lead has same dimensions
Abbreviated symbol : K06
zPackaging specifications
Package
Type
zEquivalent circuit
(6)
Taping
Code
T2R
Basic ordering unit
(pieces)
8000
(5)
Gate
Protection
Diode
∗
(4)
Tr1
EM6K6
Tr2
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain−source voltage
Symbol
Limits
Unit
VDSS
20
V
VGSS
±8
V
Continuous
ID
±300
mA
Pulsed
IDP ∗1
±600
mA
∗2
150
mW / TOTAL
120
mW / ELEMENT
Gate−source voltage
Drain current
(1)
Total power dissipation
PD
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗
Gate
Protection
Diode
(2)
(3)
(1)Tr1
(2)Tr1
(3)Tr2
(4)Tr2
(5)Tr2
(6)Tr1
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land.
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ∗
Limits
833
1042
Source
Gate
Drain
Source
Gate
Drain
Unit
°C/W / TOTAL
°C/W / ELEMENT
∗ Each terminal mounted on a recommended land
1/3
EM6K6
Transistor
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±10
µA
VGS=±8V, VDS=0V
V(BR)DSS
20
−
−
V
ID=1mA, VGS=0V
Gate-source leakage
Drain-source breakdown voltage
Conditions
IDSS
−
−
1.0
µA
VDS=20V, VGS=0V
Gate threshold voltage
VGS(th)
0.3
−
1.0
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
−
0.7
1.0
RDS(on)∗
Ω
ID=300mA, VGS=4.0V
−
0.8
1.2
Ω
ID=300mA, VGS=2.5V
−
1.0
1.4
Ω
ID=300mA, VGS=1.8V
400
−
−
ms
ID=300mA, VDS=10V
Zero gate voltage drain current
|Yfs| ∗
Forward transfer admittance
Input capacitance
Ciss
−
25
−
pF
VDS=10V
Output capacitance
Coss
−
10
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
10
−
pF
f=1MHz
Turn-on delay time
td(on) ∗
−
5
−
ns
ID=150mA, VDD
tr ∗
−
10
−
ns
VGS=4.0V
td(off) ∗
tf ∗
−
15
−
ns
RL=67Ω
−
10
−
ns
RG=10Ω
Rise time
Turn-off delay time
Fall time
10V
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol
VSD ∗
Forward voltage
Min.
Typ.
Max.
−
−
1.2
Unit
V
Conditions
IS= 100mA, VGS=0V
∗ Pulsed
zElectrical characteristic curves
10
0.1
0.01
Ta=125°C
75°C
25°C
−25°C
0.001
0.0001
0.00001
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical transfer characteristics
10
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
DRAIN CURRENT : ID (A)
1 VDS=10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01
0.1
DRAIN CURRENT : ID (A)
Fig.2 Static drain-source on-state
resistance vs. drain current (Ι)
1
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.3 Static drain-source on-state
resistance vs. drain current (ΙΙ)
2/3
EM6K6
Transistor
1
0.1
0.01
0.1
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.0
0.5
1
1.5
Ta=25°C
f=1MHZ
VGS=0V
Ciss
10
Crss
1
0.01
0.1
1
Coss
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Static drain-source on-state
resistance vs. drain current (ΙΙΙ)
1000
100
VGS=0V
Pulsed
CAPACITANCE : C (pF)
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
SWITHING TIME : t (ns)
1
VGS=1.8V
Pulsed
SOURCE CURRENT : IS (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
10
Fig.6 Typical capacitance vs.
drain-source voltage
Fig.5 Source current vs.
source-drain voltage
Ta=25°C
VDD=10V
VGS=4V
RG=10Ω
Pulsed
100
td(off)
tf
td(on)
10
tr
1
0.01
1
0.1
DRAIN CURRENT : ID (A)
Fig.7 Switching characteristics
zSwitching characteristics measurement circuit
Pulse width
VGS
RG
ID
VDS
D.U.T.
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.8 Switching time measurement circuit
tr
td (off)
tf
toff
Fig.9 Switching time waveforms
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Copyright © 2007 ROHM CO.,LTD.
THE AMERICAS / EUPOPE / ASIA / JAPAN
Contact us : [email protected] rohm.co. jp
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Appendix1-Rev2.0