ROHM US5U35

US5U35
Transistor
4V Drive Pch+SBD MOSFET
US5U35
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
zDimensions (Unit : mm)
TUMT5
2.0
zFeatures
1) The US5U35 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.
2) With fast switching.
3) Built-in schottky barrier diode has low forward voltage.
0.2Max.
1.3
Abbreviated symbol : U35
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
zEquivalent circuit
Taping
(5)
(4)
TR
3000
∗2
US5U35
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
1/5
US5U35
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
−45
±20
±0.7
±2.8
−0.4
−2.8
150
0.7
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
VR
IF
IFSM
Tj
PD
45
40
100
1.0
150
0.5
V
V
mA
A
°C
W / ELEMENT
<MOSFET AND Di>
Power dissipation
Range of storage temperature
PD ∗3
Tstg
1.0
−55 to +150
W / TOTAL
°C
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
∗2
∗3
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min.
IGSS
−
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −45
−
IDSS
Zero gate voltage drain current
VGS (th) −1.0
Gate threshold voltage
−
∗
Static drain-source on-state
−
RDS (on)
resistance
−
∗
0.6
Yfs
Forward transfer admittance
−
Ciss
Input capacitance
−
Coss
Output capacitance
−
Crss
Reverse transfer capacitance
∗
−
td (on)
Turn-on delay time
∗
−
tr
Rise time
∗
−
td (off)
Turn-off delay time
∗
−
tf
Fall time
−
Qg
Total gate charge
−
Qgs
Gate-source charge
−
Qgd
Gate-drain charge
−
−
−
−
0.6
0.9
1.0
−
120
14
11
6
5
17
6
1.7
0.8
0.5
Max.
±10
−
−1
−2.5
0.8
1.3
1.4
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Min.
Typ.
Max.
Unit
−
−
−1.2
V
Min.
−
−
Typ.
−
−
Max.
0.55
30
Unit
V
µA
Typ.
Conditions
VGS=±20V, VDS=0V
ID=−1mA, VGS=0V
VDS=−45V, VGS=0V
VDS=−10V, ID=−1mA
ID=−0.7A, VGS=−10V
ID=−0.7A, VGS=−4.5V
ID=−0.35A, VGS=−4.0V
VDS=−10V, ID=−0.7A
VDS=−10V
VGS=0V
f=1MHz
ID=−0.35A
VDD −25V
VGS=−10V
RL 71Ω
RG=10Ω
VDD −25V, VGS=−5V
ID=−0.7A
RL 36Ω, RG=10Ω
∗ Pulsed
<Body diode (source−drain)>
Parameter
Forward voltage
Symbol
VSD
∗
Conditions
IS=−0.7A, VGS=0V
∗ Pulsed
<Di >
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Conditions
IF=100mA
VR=10V
2/5
US5U35
Transistor
zElectrical characteristic curves
10
0.01
0.001
0.0001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
0.1
0.01
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.1 Typical Transfer Characteristics
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
1
VGS=−4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
0.1
0.01
0.1
1
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
Fig.2 Static Drain-Source
On-State Resistance vs.
Drain Current(Ι)
Fig.3 Static Drain-Source
On-State Resistance vs.
Drain Current(ΙΙ)
Ta=25°C
f=1MHZ
VGS=0V
Ciss
100
Coss
10
Crss
1000
Ta=25°C
VDD=−25V
VGS=−10V
RG=10Ω
Pulsed
tf
100
td(off)
10
td(on)
tr
0.1
0.01
0.1
1
0.01
1
1
10
1
0.01
100
0.1
1
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source
On-State Resistance vs.
Drain Current(ΙΙΙ)
Fig.5 Typical Capacitance
vs. Drain-Source Voltage
Fig.6 Switching Characteristics
SOURCE CURRENT : −IS (A)
6
4
2
0.1
0.01
0.001
0.0001
1
2
3
4
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0
0.5
1.0
1.5
FORWARD TRANSFER ADMITTANCE
: Yfs (S)
10
1
Ta=25°C
VDD=−25V
ID=−0.7A
RG=10Ω
Pulsed
8
0
0
0.1
DRAIN CURRENT : −ID (A)
10
GATE-SOURCE VOLTAGE : −VGS (V)
0.1
1000
VGS=−4V
Pulsed
CAPACITANCE : C (pF)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
10
VGS=−10V
Pulsed
SWITCHING TIME : t (ns)
VDS=−10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
DRAIN CURRENT : −ID (A)
1
1
VGS=−10V
Pulsed
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.001
0.01
0.1
1
TOTAL GATE CHARGE : Qg (nC)
SOURCE-DRAIN VOLTAGE : −VSD (V)
DRAIN CURRENT : −ID (A)
Fig.7 Dynamic Input Characteristics
Fig.8 Source Current vs.
Source-Drain Voltage
Fig.9 Forward Transfer Admittance
vs.Drain Current
3/5
US5U35
Transistor
Pulsed
1000
Ta = 75℃
100
Ta = 25℃
10
0.1
Ta = 125℃
1
Ta= - 25℃
0.1
Pulsed
FORWARD CURRENT : IF(A)
REVERSE CURRENT : IR [uA]
10000
0.01
Ta = 125℃
Ta = 75℃
0.01
Ta = 25℃
Ta= - 25℃
0.001
0
5
10 15 20 25 30 35 40
REVERSE VOLTAGE : VR [V]
Fig.10 Reverse Current vs. Reverse Voltage
0
0.1
0.2
0.3
0.4
0.5
0.6
FORWARD VOLTAGE : VF(V)
Fig.11 Forward Current vs. Forward Voltage
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/5
US5U35
Transistor
zMeasurement circuits
Pulse Width
VGS
10%
50%
50%
90%
10%
10%
VGS
ID
VDS
D.U.T.
RG
90%
90%
VDS
RL
VDD
td(on)
tr
tf
td(off)
ton
toff
Fig.13 Switching Waveforms
Fig.12 Switching Time Measurement Circuit
VG
Qg
VGS
VGS
ID
VDS
Qgs
IG(Const)
RG
D.U.T.
Qgd
RL
VDD
Charge
Fig.14 Gate Charge Measurement Circuit
Fig.15 Gate Charge Waveforms
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
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Copyright © 2008 ROHM CO.,LTD.
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Appendix1-Rev2.0