ROHM US6U37

US6U37
Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zDimensions (Unit : mm)
0.2Max.
TUMT6
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
Abbreviated symbol : U37
zApplications
Switching
zInner circuit
(6)
(5)
(4)
zPackage specifications
Package
Type
Taping
TR
Code
Basic ordering unit (pieces)
∗2
3000
∗1
US6U37
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(3)
(1)Gate
(2)Source
(3)Cathode
(4)Anode
(5)Anode
(6)Drain
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Limits
30
±12
±1.5
±6.0
0.6
6.0
Channel temperature
Tch
150
°C
Power dissipation
PD
0.7
W / ELEMENT
Limits
25
20
0.7
Unit
V
V
A
10
150
0.5
A
°C
W / ELEMENT
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
∗2
Unit
V
V
A
A
A
A
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
Symbol
VRM
VR
IF
IFSM
Tj
PD
∗1
∗2
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
1/4
US6U37
Transistors
<MOSFET and Di>
Parameter
Symbol
PD ∗1
Tstg
Power dissipation
Range of storage temperature
Limits
Unit
1.0
−55 to +150
W / TOTAL
°C
∗1 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol
Min.
Typ.
Max.
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
−
30
−
0.5
−
−
−
1.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
170
180
240
−
80
14
12
7
9
15
6
1.6
0.5
0.3
±10
−
1
1.5
240
250
340
−
−
−
−
−
−
−
−
2.2
−
−
<Body diode characteristics (Source-drain)>
Parameter
Symbol Min.
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Conditions
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=±12V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 1.5A, VGS= 4.5V
ID= 1.5A, VGS= 4V
ID= 1.5A, VGS= 2.5V
VDS= 10V, ID= 1.5A
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 0.75A
VGS= 4.5V
RL 20Ω
RG=10Ω
VDD 15V, VGS= 4.5V
ID= 1.5A
RL 10Ω, RG= 10Ω
IS= 0.6A, VGS=0V
∗Pulsed
Forward voltage
Typ.
Max.
VSD
−
−
1.2
Unit
V
Conditions
<Di>
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
Parameter
VF
−
−
0.49
V
IF= 0.7A
Reverse current
IR
−
−
200
µA
VR= 20V
Conditions
2/4
US6U37
Transistors
zElectrical characteristics curves
Ta=25°C
VDD=15V
VGS=4.5V
RG=10Ω
Pulsed
SWITCHING TIME : t (ns)
Ciss
100
Crss
Coss
10
0.1
1
10
100
td(off)
10
td(on)
tr
1
0.01
100
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
10
0.5
1
1.5
2
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
ID=1.5A
0.7
0.6
0.5
ID=0.75A
0.3
0.2
1
VGS=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.1
0.1
1
2
3
4
5
6
7
8
9
10
0.01
0.0
10
VGS=4.0V
Pulsed
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
1
1
0
GATE-SOURCE VOLTAGE : VGS (V)
VGS=4.5V
Pulsed
0.1
1
10
Fig.4 Typical Transfer Characteristics
0.1
0.01
2
Ta=25°C
Pulsed
0
0
2.5
3
TOTAL GATE CHARGE : Qg (nC)
0.8
0.4
4
10
0.9
GATE-SOURCE VOLTAGE : VGS (V)
10
1
1.0
VDS=10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on)(Ω)
DRAIN CURRENT : ID (A)
10
RG=10Ω
Pulsed
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Ta=25°C
VDD=15V
5 ID=1.5A
0
0.1
SOURCE CURRENT : IS (A)
1
0.01
tf
6
10
Fig.6 Source Current vs.
Source-Drain Voltage
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
VGS=0V
GATE-SOURCE VOLTAGE : VGS (V)
1000
1000
1
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
3/4
US6U37
Transistors
1
Pulsed
Ta = 125℃
pulsed
FORWARD CURRENT : IF(A)
REVERSE CURRENT : IR [uA]
100000
10000
Ta = 75℃
1000
Ta = 25℃
100
10
Ta= - 25℃
1
0.1
0.01
0.1
Ta = 125℃
Ta = 75℃
Ta = 25℃
0.01
Ta= - 25℃
0.001
0
5
10
15
20
25
0
0.1
REVERSE VOLTAGE : VR [V]
0.2
0.3
0.4
0.5
0.6
FORWARD VOLTAGE : VF(V)
Fig.11 Forward Current vs. Forward Voltage
Fig.10 Reverse Current vs. Reverse
zMeasurement circuit
Pulse Width
VGS
ID
VDS
90%
50%
10%
VGS
RL
VDS
50%
10%
D.U.T.
10%
RG
VDD
90%
td(on)
90%
td(off)
tr
ton
Fig.12 Switching Time Test Circuit
tf
toff
Fig.13 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.14 Gate Charge Measurement Circuit
Fig.15 Gate Charge Waveform
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Copyright © 2008 ROHM CO.,LTD.
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Contact us : [email protected] rohm.co. jp
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Appendix1-Rev2.0