US6U37 Transistors 2.5V Drive Nch+SBD MOSFET US6U37 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U37 zApplications Switching zInner circuit (6) (5) (4) zPackage specifications Package Type Taping TR Code Basic ordering unit (pieces) ∗2 3000 ∗1 US6U37 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Cathode (4)Anode (5)Anode (6)Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits 30 ±12 ±1.5 ±6.0 0.6 6.0 Channel temperature Tch 150 °C Power dissipation PD 0.7 W / ELEMENT Limits 25 20 0.7 Unit V V A 10 150 0.5 A °C W / ELEMENT Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed ∗2 Unit V V A A A A ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Symbol VRM VR IF IFSM Tj PD ∗1 ∗2 ∗1 60Hz 1cycle ∗2 Mounted on ceramic board 1/4 US6U37 Transistors <MOSFET and Di> Parameter Symbol PD ∗1 Tstg Power dissipation Range of storage temperature Limits Unit 1.0 −55 to +150 W / TOTAL °C ∗1 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) − 30 − 0.5 − − − 1.5 − − − − − − − − − − − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 ±10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − <Body diode characteristics (Source-drain)> Parameter Symbol Min. Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=±12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL 20Ω RG=10Ω VDD 15V, VGS= 4.5V ID= 1.5A RL 10Ω, RG= 10Ω IS= 0.6A, VGS=0V ∗Pulsed Forward voltage Typ. Max. VSD − − 1.2 Unit V Conditions <Di> Symbol Min. Typ. Max. Unit Forward voltage Parameter VF − − 0.49 V IF= 0.7A Reverse current IR − − 200 µA VR= 20V Conditions 2/4 US6U37 Transistors zElectrical characteristics curves Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed SWITCHING TIME : t (ns) Ciss 100 Crss Coss 10 0.1 1 10 100 td(off) 10 td(on) tr 1 0.01 100 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 10 0.5 1 1.5 2 Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics ID=1.5A 0.7 0.6 0.5 ID=0.75A 0.3 0.2 1 VGS=0V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.1 1 2 3 4 5 6 7 8 9 10 0.01 0.0 10 VGS=4.0V Pulsed 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 1 0 GATE-SOURCE VOLTAGE : VGS (V) VGS=4.5V Pulsed 0.1 1 10 Fig.4 Typical Transfer Characteristics 0.1 0.01 2 Ta=25°C Pulsed 0 0 2.5 3 TOTAL GATE CHARGE : Qg (nC) 0.8 0.4 4 10 0.9 GATE-SOURCE VOLTAGE : VGS (V) 10 1 1.0 VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on)(Ω) DRAIN CURRENT : ID (A) 10 RG=10Ω Pulsed DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage Ta=25°C VDD=15V 5 ID=1.5A 0 0.1 SOURCE CURRENT : IS (A) 1 0.01 tf 6 10 Fig.6 Source Current vs. Source-Drain Voltage 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) CAPACITANCE : C (pF) Ta=25°C f=1MHz VGS=0V GATE-SOURCE VOLTAGE : VGS (V) 1000 1000 1 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) 3/4 US6U37 Transistors 1 Pulsed Ta = 125℃ pulsed FORWARD CURRENT : IF(A) REVERSE CURRENT : IR [uA] 100000 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 0.1 Ta = 125℃ Ta = 75℃ Ta = 25℃ 0.01 Ta= - 25℃ 0.001 0 5 10 15 20 25 0 0.1 REVERSE VOLTAGE : VR [V] 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF(V) Fig.11 Forward Current vs. Forward Voltage Fig.10 Reverse Current vs. Reverse zMeasurement circuit Pulse Width VGS ID VDS 90% 50% 10% VGS RL VDS 50% 10% D.U.T. 10% RG VDD 90% td(on) 90% td(off) tr ton Fig.12 Switching Time Test Circuit tf toff Fig.13 Switching Time Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.14 Gate Charge Measurement Circuit Fig.15 Gate Charge Waveform zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0