10-PZ12NMA080NS07-M260F78Y target datasheet flow MNPC 0 1200 V / 80 A Features ● ● ● ● flow 0 12mm housing Mixed voltage component topology Neutral point clamped inverter Reactive power capability Low inductance layout Schematic Target applications ● Solar inverter ● UPS Types ● 10-PZ12NMA080NS07-M260F78Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 56 A 240 A 112 W Half Bridge Switch Collector-emitter voltage Collector current V CES IC T j = T jmax Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES Short circuit ratings Maximum Junction Temperature Copyright Vincotech T S =80 °C T S =80 °C ±20 V t SC Tj ≤ 150°C 10 µs V CC VGE = 15V 600 V 175 °C T jmax 1 2 Jul. 2015 / Revision 1 10-PZ12NMA080NS07-M260F78Y target datasheet Parameter Conditions Symbol Value Unit 600 V Neutral Point Diode Peak Repetitive Reverse Voltage V RRM IF T j = T jmax T h = 80°C 34 A Total power dissipation P tot T j = T jmax T h = 80°C 59 W Maximum Junction Temperature T jmax 175 °C Value Unit 650 V 67 A 225 A 77 W Continuous (direct) forward current Parameter Condition Symbol Neutral Point Switch Collector-emitter voltage Collector current V CES IC T j=T jmax T S=80°C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j=T jmax Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Value Unit 1200 V 48 A 100 A 79 W 175 °C Parameter T S=80°C Conditions Symbol Half Bridge Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Copyright Vincotech T j = T jmax T j = T jmax 2 T h = 80°C T h = 80°C 2 Jul. 2015 / Revision 1 10-PZ12NMA080NS07-M260F78Y target datasheet Module Properties Parameter Conditions Symbol Value Unit Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 8,95 mm Isolation Properties Isolation voltage V isol DC voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 3 2 Jul. 2015 / Revision 1 10-PZ12NMA080NS07-M260F78Y target datasheet Characteristic Values Half Bridge Switch Parameter Symbol Conditions Value V GE [V] V CE [V] I C [A] T j[ °C] Unit Min Typ Max 4,5 5,5 6,5 Static Gate-emitter threshold voltage Collec tor-emitter saturation voltage V GE(th) V GE=V CE 0,0006 15 V CEsat 80 25 125 25 2,02 125 2,17 V V 150 Collec tor-emitter c ut-off current I CES 0 1200 Gate-emitter leakage c urrent I GES 20 0 25 2000 125 25 400 125 rg none Input capacitance C ies 15000 Output capacitance C oes Reverse transfer capac itance C res Internal gate resistance Gate c harge f=1 MHz 0 20 nA Ω 400 25 µA pF 280 15 Qg 600 80 25 626 nC 0,85 K/W Value Unit Thermal Thermal resistance junc tion to sink R th(j-s) Thermal grease thickness≤50um λ = 1 W /mK Neutral Point Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max Static Forward voltage 75 VF 25 2,15 125 2,36 V 1,6 K/W 150 Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK 4 2 Jul. 2015 / Revision 1 10-PZ12NMA080NS07-M260F78Y target datasheet Neutral Point Switch Parameter Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 4,2 5 5,8 1,05 1,45 Static Gate-emitter threshold voltage V GE(th) V GE=V CE Collec tor-emitter saturation voltage V CEsat 0,0002 25 125 25 15 75 V V 125 150 Collec tor-emitter cut-off c urrent I CES 0 650 Gate-emitter leakage current I GES 20 0 Internal gate resistance Input capacitance 40 125 25 100 125 none rg µA nA Ω 11625 C ies f=1MHz Reverse transfer c apac itanc e 25 0 25 25 pF 30 C res Thermal Thermal resistanc e junction to sink R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK 1,24 K/W Value Unit Half Bridge Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max 1,73 2,05 Static 25 Forward voltage Reverse leakage c urrent 50 VF 1200 Ir 1,35 125 1,70 150 1,68 25 V 10 150 - µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK 5 1,21 K/W 2 Jul. 2015 / Revision 1 10-PZ12NMA080NS07-M260F78Y target datasheet Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] R100=1486 Ω 100 Power dissipation constant Typ Unit Max 22 -12 kΩ +12 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 6 2 Jul. 2015 / Revision 1 10-PZ12NMA080NS07-M260F78Y target datasheet Ordering Code & Marking Version without thermal paste with Press-fit pins NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Ordering Code 10-PZ12NMA080NS07-M260F78Y Text Datamatrix in DataMatrix as M260F78Y in packaging barcode as M260F78Y Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y 1 33,6 0 2 30,8 0 3 22 0 4 19,2 0 5 10,1 0 6 2,8 0 7 0 0 8 0 7,1 9 0 9,9 10 0 12,7 11 0 15,5 12 0 22,6 13 2,8 22,6 14 10,1 22,6 15 19,2 22,6 16 22 22,6 17 30,8 22,6 18 33,6 22,6 19 33,6 14,8 20 33,6 8,2 Copyright Vincotech 7 2 Jul. 2015 / Revision 1 10-PZ12NMA080NS07-M260F78Y target datasheet Pinout Identification ID Component Voltage Current Function T1,T2 IGBT 1200V 80A Half Bridge Switch D1,D2 FWD 1200V 50A Half Bridge Diode T3,T4 IGBT 650V 75A Neutral Point Switch D3,D4 FWD 600V 75A Neutral Point Diode T NTC - - Thermistor Copyright Vincotech 8 Comment 2 Jul. 2015 / Revision 1 10-PZ12NMA080NS07-M260F78Y target datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Document No.: Date: 10-PZ12NMA080NS07-M260F78Y-T1-14 2 Jul. 2015 Modification: Pages Product status definition Datasheet Status Product Status Target Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 9 2 Jul. 2015 / Revision 1