FZ06BIA070FS Maximum Ratings

FZ06BIA070FS
target datasheet
flowSOL 0 BI
600V/25A
Features
flow0 housing
● High efficiency
● Ultra fast switching frequency
● Low inductive design
● SiC in boost and H bridge
Target Applications
Schematic
● Transformerless solar inverters
Types
● FZ06BIA070FS
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1600
V
28
38
A
220
A
220
A2s
33
50
W
Tjmax
150
°C
VDS
600
V
21
28
A
159
A
70
110
W
Bypass Diode
Repetitive peak reverse voltage
VRRM
Forward current per diode
IFAV
Surge forward current
IFSM
I2t-value
I2t
Power dissipation per Diode
Ptot
Maximum Junction Temperature
DC current
Th=80°C
Tc=80°C
tp=10ms
Tj=25°C
Tj=Tjmax
Th=80°C
Tc=80°C
Input Boost MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
ID
IDpulse
Tj=Tjmax
Th=80°C
Tc=80°C
tp limited by Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Power dissipation
Ptot
Gate-source peak voltage
VGS
±20
V
Tjmax
150
°C
Maximum Junction Temperature
copyright by Vincotech
1
Revision: 1
FZ06BIA070FS
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
Input Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
Tj=25°C
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
16
Tc=80°C
23
Th=80°C
Tc=80°C
Tjmax
A
140
A
31
56
W
175
°C
600
V
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tj=25°C
IF
Tj=Tjmax
Th=80°C
Tc=80°C
14
30
A
Repetitive peak forward current
IFRM
tp limited by Tjmax
Tc=100°C
70
A
Power dissipation per Diode
Ptot
Tj=Tjmax
Th=80°C
Tc=80°C
117
208
W
Tjmax
175
°C
VDS
600
V
Maximum Junction Temperature
Buck MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
ID
IDpulse
Tj=Tjmax
Th=80°C
Tc=80°C
21
28
A
tp limited by Tjmax
Tc=25°C
159
A
Tj=Tjmax
Th=80°C
Tc=80°C
110
70
Power dissipation
Ptot
Gate-source peak voltage
Vgs
±20
V
Tjmax
150
°C
VCE
600
V
27
34
A
90
A
53
81
W
±20
V
6
360
μs
V
175
°C
Maximum Junction Temperature
W
Boost IGBT
Collector-emitter break down voltage
DC collector current
IC
Tj=Tjmax
Repetitive peak collector current
ICpuls
tp limited by Tjmax
Power dissipation per IGBT
Ptot
Tj=Tjmax
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
copyright by Vincotech
Tj≤150°C
VGE=15V
Tjmax
2
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Revision: 1
FZ06BIA070FS
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
Thermal Properties
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Insulation Properties
Insulation voltage
copyright by Vincotech
Vis
t=2s
DC voltage
3
Revision: 1
FZ06BIA070FS
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,7
1,06
0,99
0,90
0,75
0,01
0,02
1,3
Bypass Diode
Forward voltage
solar inverte
Threshold voltage (for power loss calc. only)
Vto
Slope resistance (for power loss calc. only)
rt
Reverse current
Ir
Thermal resistance chip to heatsink per chip
RthJH
15
1200
V
Ω
0,05
Thermal grease
thickness≤50um
λ = 1 W/mK
V
2,12
mA
K/W
Input Boost MOSFET
Static drain to source ON resistance
Gate threshold voltage
RDS(on)
V(GS)th
10
26
VGS=VDS
0,0017
Gate to Source Leakage Current
Igss
20
0
Zero Gate Voltage Drain Current
Idss
0
600
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
td(ON)
tr
td(OFF)
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Thermal resistance chip to heatsink per chip
RthJH
Rgoff=1,7 Ω
Rgon=1,7 Ω
Rgon=1,7 Ω
400
13
480
10
26
26
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,5
0,07
0,17
3
Ω
3,5
200
25000
V
nA
nA
16
12
ns
83
5
tbd
tbd
tbd
tbd
170
mWs
nC
21
87
3800
f=1MHz
0
Tj=25°C
100
215
pF
tbd
Thermal grease
thickness≤50um
λ = 1 W/mK
1,00
K/W
Input Boost Diode
Forward voltage
VF
Reverse leakage current
Irm
Peak recovery current
trr
Reverse recovery charge
Qrr
Reverse recovered energy
Erec
Thermal resistance chip to heatsink per chip
copyright by Vincotech
10
480
12
IRRM
Reverse recovery time
Peak rate of fall of recovery current
12
Rgon=1,7 Ω
480
10
di(rec)max
/dt
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
12
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,60
1,90
400
tbd
tbd
tbd
tbd
tbd
2,50
4
1,8
V
μA
A
ns
μC
mWs
A/μs
K/W
Revision: 1
FZ06BIA070FS
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Unit
Typ
Max
1,60
1,90
tbd
1,8
Buck Diode
Diode forward voltage
Peak reverse recovery current
VF
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
6
Rgon=1,7 Ω
10
480
6
di(rec)max
/dt
Reverse recovered energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
A
tbd
ns
tbd
μC
tbd
A/μs
tbd
Thermal grease
thickness≤50um
λ = 1 W/mK
V
mWs
3,50
K/W
Buck MOSFET
Static drain to source ON resistance
Rds(on)
Gate threshold voltage
V(GS)th
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
10
26
VDS=VGS
Igss
20
Idss
0,0017
0
0
600
td(ON)
tr
td(OFF)
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Total gate charge
Qg
Gate to source charge
Qgs
Rgoff=1,7 Ω
Rgon=1,7 Ω
13
400
26
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,5
70
170
3
200
25000
83
nA
ns
5
tbd
tbd
tbd
tbd
mWs
170
10
480
26
Tj=25°C
21
Qgd
87
Ciss
3800
Output capacitance
Coss
Reverse transfer capacitance
Crss
copyright by Vincotech
nA
12
Input capacitance
RthJH
V
16
Gate to drain charge
Thermal resistance chip to heatsink per chip
mΩ
3,5
f=1MHz
0
100
Tj=25°C
215
nC
pF
tbd
Thermal grease
thickness≤50um
λ = 1 W/mK
1,00
5
K/W
Revision: 1
FZ06BIA070FS
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Unit
Min
Typ
Max
5
5,8
6,5
Boost IGBT
Gate emitter threshold voltage
VGE(th)
VCE=VGE
0,00043
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,39
1,51
Collector-emitter saturation voltage
VCE(sat)
15
Collector-emitter cut-off incl diode
ICES
0
600
Gate-emitter leakage current
IGES
20
0
Integrated Gate resistor
Rgint
none
Input capacitance
Cies
1630
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink per chip
RthJH
f=1MHz
30
0
25
15
480
V
V
0,2
650
mA
nA
Ω
Tj=25°C
108
Tj=25°C
167
nC
1,78
K/W
pF
50
30
Thermal grease
thickness≤50um
λ = 1 W/mK
Note: For the Boost IGBT only LF switching allowed
Thermistor
Rated resistance*
R25
R100
Power dissipation
P
B-value
B(25/100)
Tol. ±5%
Tj=25°C
Tj=100°C
Tol. ±3%
20,9
22
1486
23,1
kΩ
Ω
Tj=25°C
200
mW
Tj=25°C
3998
K
* see details on Thermistor charts on Figure 2.
copyright by Vincotech
6
Revision: 1
FZ06BIA070FS
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
without thermal paste 12mm housing
Ordering Code
10-FZ06BIA070FS-P894E
in DataMatrix as
P894E
in packaging barcode as
P894E
Outline
Pinout
copyright by Vincotech
7
Revision: 1
FZ06BIA070FS
target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Preliminary
Final
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Full Production
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright by Vincotech
8
Revision: 1