FZ06BIA070FS target datasheet flowSOL 0 BI 600V/25A Features flow0 housing ● High efficiency ● Ultra fast switching frequency ● Low inductive design ● SiC in boost and H bridge Target Applications Schematic ● Transformerless solar inverters Types ● FZ06BIA070FS Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 28 38 A 220 A 220 A2s 33 50 W Tjmax 150 °C VDS 600 V 21 28 A 159 A 70 110 W Bypass Diode Repetitive peak reverse voltage VRRM Forward current per diode IFAV Surge forward current IFSM I2t-value I2t Power dissipation per Diode Ptot Maximum Junction Temperature DC current Th=80°C Tc=80°C tp=10ms Tj=25°C Tj=Tjmax Th=80°C Tc=80°C Input Boost MOSFET Drain to source breakdown voltage DC drain current Pulsed drain current ID IDpulse Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Power dissipation Ptot Gate-source peak voltage VGS ±20 V Tjmax 150 °C Maximum Junction Temperature copyright by Vincotech 1 Revision: 1 FZ06BIA070FS target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V Input Boost Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=25°C Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C 16 Tc=80°C 23 Th=80°C Tc=80°C Tjmax A 140 A 31 56 W 175 °C 600 V Buck Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Th=80°C Tc=80°C 14 30 A Repetitive peak forward current IFRM tp limited by Tjmax Tc=100°C 70 A Power dissipation per Diode Ptot Tj=Tjmax Th=80°C Tc=80°C 117 208 W Tjmax 175 °C VDS 600 V Maximum Junction Temperature Buck MOSFET Drain to source breakdown voltage DC drain current Pulsed drain current ID IDpulse Tj=Tjmax Th=80°C Tc=80°C 21 28 A tp limited by Tjmax Tc=25°C 159 A Tj=Tjmax Th=80°C Tc=80°C 110 70 Power dissipation Ptot Gate-source peak voltage Vgs ±20 V Tjmax 150 °C VCE 600 V 27 34 A 90 A 53 81 W ±20 V 6 360 μs V 175 °C Maximum Junction Temperature W Boost IGBT Collector-emitter break down voltage DC collector current IC Tj=Tjmax Repetitive peak collector current ICpuls tp limited by Tjmax Power dissipation per IGBT Ptot Tj=Tjmax Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature copyright by Vincotech Tj≤150°C VGE=15V Tjmax 2 Th=80°C Tc=80°C Th=80°C Tc=80°C Revision: 1 FZ06BIA070FS target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage copyright by Vincotech Vis t=2s DC voltage 3 Revision: 1 FZ06BIA070FS target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Unit Tj Min Typ Max Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 0,7 1,06 0,99 0,90 0,75 0,01 0,02 1,3 Bypass Diode Forward voltage solar inverte Threshold voltage (for power loss calc. only) Vto Slope resistance (for power loss calc. only) rt Reverse current Ir Thermal resistance chip to heatsink per chip RthJH 15 1200 V Ω 0,05 Thermal grease thickness≤50um λ = 1 W/mK V 2,12 mA K/W Input Boost MOSFET Static drain to source ON resistance Gate threshold voltage RDS(on) V(GS)th 10 26 VGS=VDS 0,0017 Gate to Source Leakage Current Igss 20 0 Zero Gate Voltage Drain Current Idss 0 600 Turn On Delay Time Rise Time Turn off delay time Fall time td(ON) tr td(OFF) tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Total gate charge Qg Gate to source charge Qgs Gate to drain charge Qgd Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Thermal resistance chip to heatsink per chip RthJH Rgoff=1,7 Ω Rgon=1,7 Ω Rgon=1,7 Ω 400 13 480 10 26 26 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 2,5 0,07 0,17 3 Ω 3,5 200 25000 V nA nA 16 12 ns 83 5 tbd tbd tbd tbd 170 mWs nC 21 87 3800 f=1MHz 0 Tj=25°C 100 215 pF tbd Thermal grease thickness≤50um λ = 1 W/mK 1,00 K/W Input Boost Diode Forward voltage VF Reverse leakage current Irm Peak recovery current trr Reverse recovery charge Qrr Reverse recovered energy Erec Thermal resistance chip to heatsink per chip copyright by Vincotech 10 480 12 IRRM Reverse recovery time Peak rate of fall of recovery current 12 Rgon=1,7 Ω 480 10 di(rec)max /dt RthJH Thermal grease thickness≤50um λ = 1 W/mK 12 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,60 1,90 400 tbd tbd tbd tbd tbd 2,50 4 1,8 V μA A ns μC mWs A/μs K/W Revision: 1 FZ06BIA070FS target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Min Unit Typ Max 1,60 1,90 tbd 1,8 Buck Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current 6 Rgon=1,7 Ω 10 480 6 di(rec)max /dt Reverse recovered energy Erec Thermal resistance chip to heatsink per chip RthJH Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C A tbd ns tbd μC tbd A/μs tbd Thermal grease thickness≤50um λ = 1 W/mK V mWs 3,50 K/W Buck MOSFET Static drain to source ON resistance Rds(on) Gate threshold voltage V(GS)th Gate to Source Leakage Current Zero Gate Voltage Drain Current Turn On Delay Time Rise Time Turn off delay time Fall time 10 26 VDS=VGS Igss 20 Idss 0,0017 0 0 600 td(ON) tr td(OFF) tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Total gate charge Qg Gate to source charge Qgs Rgoff=1,7 Ω Rgon=1,7 Ω 13 400 26 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 2,5 70 170 3 200 25000 83 nA ns 5 tbd tbd tbd tbd mWs 170 10 480 26 Tj=25°C 21 Qgd 87 Ciss 3800 Output capacitance Coss Reverse transfer capacitance Crss copyright by Vincotech nA 12 Input capacitance RthJH V 16 Gate to drain charge Thermal resistance chip to heatsink per chip mΩ 3,5 f=1MHz 0 100 Tj=25°C 215 nC pF tbd Thermal grease thickness≤50um λ = 1 W/mK 1,00 5 K/W Revision: 1 FZ06BIA070FS target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 Boost IGBT Gate emitter threshold voltage VGE(th) VCE=VGE 0,00043 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,39 1,51 Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off incl diode ICES 0 600 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint none Input capacitance Cies 1630 Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH f=1MHz 30 0 25 15 480 V V 0,2 650 mA nA Ω Tj=25°C 108 Tj=25°C 167 nC 1,78 K/W pF 50 30 Thermal grease thickness≤50um λ = 1 W/mK Note: For the Boost IGBT only LF switching allowed Thermistor Rated resistance* R25 R100 Power dissipation P B-value B(25/100) Tol. ±5% Tj=25°C Tj=100°C Tol. ±3% 20,9 22 1486 23,1 kΩ Ω Tj=25°C 200 mW Tj=25°C 3998 K * see details on Thermistor charts on Figure 2. copyright by Vincotech 6 Revision: 1 FZ06BIA070FS target datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking without thermal paste 12mm housing Ordering Code 10-FZ06BIA070FS-P894E in DataMatrix as P894E in packaging barcode as P894E Outline Pinout copyright by Vincotech 7 Revision: 1 FZ06BIA070FS target datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by Vincotech 8 Revision: 1