70-W612A3C600SH-M600F target datasheet flowMNPC 4w 1200V/600A Features flowMNPC 4w housing ● High Efficient Advanced Paralleled NPC Topology ● Asymmetrical Inductance with Interface for Optional Regeneration of Switching Losses ● High Power Screw Interface ● Integrated DC-Snubber Capacitors ● Temperature Sensor Schematic Target Applications ● Solar Inverter ● UPS ● High Frequency Motor Drive Types ● 70-W612A3C600SH-M600F Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V 117 156 A 600 A 173 262 W Tjmax 175 °C VDS 600 V 122 150 A 1088 A 354 537 W Snubber FWD ( D3 ) Repetitive peak reverse voltage VRRM Forward current per diode IFAV DC current Surge forward current IFSM tp=10ms Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Buck MOSFET ( T1 ) Drain to source breakdown voltage DC drain current Pulsed drain current ID IDpulse Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Th=80°C Tc=80°C Power dissipation Ptot Gate-source peak voltage VGS ±20 V Tjmax 150 °C Maximum Junction Temperature copyright Vincotech Tj=Tjmax 1 Revision: 1 70-W612A3C600SH-M600F target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V 2 3 A 8 A 16 24 W Tjmax 150 °C VCE 600 V Neutral Point Inv FWD ( D4 , D5 ) Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Neutral Point IGBT ( T2 ) Collector-emitter break down voltage DC collector current Repetitive peak collector current IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings Maximum Junction Temperature tSC VCC Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Tj≤150°C VGE=15V Tjmax 405 535 A 1800 A 602 913 W ±20 V 6 360 μs V 175 °C 600 V 142 182 A 1800 A 353 535 W 175 °C 600 V 18 20 A tbd. A 32 49 W 175 °C Neutral Point FWD ( D1 ) Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Th=80°C Tc=80°C Tjmax Buck Inverse FWD ( D13 ) Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current Power dissipation per Diode Maximum Junction Temperature copyright Vincotech VRRM Tj=25°C IF Tj=Tjmax IFRM Ptot Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Tjmax 2 Th=80°C Tc=80°C Revision: 1 70-W612A3C600SH-M600F target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 294 384 A 1200 A 531 805 W ±20 V Tj≤150°C 10 μs VGE=15V 800 V 175 °C 1200 V 12 15 A 28 A 32 48 W 150 °C 1200 V 172 231 A 1800 A 312 473 W 175 °C 25 V Half Bridge IGBT ( T3 ) Collector-emitter break down voltage DC collector current VCE IC Th=80°C Tc=80°C Tj=Tjmax Repetitive peak collector current ICpuls tp limited by Tjmax Power dissipation per IGBT Ptot Tj=Tjmax Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Th=80°C Tc=80°C Tjmax Half Bridge Inverse FWD ( D6 ) Peak Repetitive Reverse Voltage DC forward current VRRM Tc=25°C IF Tj=Tjmax Th=80°C Tc=80°C Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Tjmax Half Bridge FWD ( D2 ) Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Th=80°C Tc=80°C Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Tjmax DC link Capacitor ( C1 ) Max.DC voltage VMAX Tc=25°C Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage copyright Vincotech Vis t=2s DC voltage 3 Revision: 1 70-W612A3C600SH-M600F target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Unit Tj Min Typ Max Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,2 1,6 1,9 Snubber FWD ( D3 ) Forward voltage VF Threshold voltage (for power loss calc. only) Vto 600 Slope resistance (for power loss calc. only) rt 600 Reverse current Ir Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 200 600 tbd. tbd. tbd. tbd. V Ω 0,66 Thermal grease thickness≤50um λ = 1 W/mK V mA 0,55 K/W 0,36 Buck MOSFET ( T1 ) Static drain to source ON resistance Gate threshold voltage RDS(on) V(GS)th 178 10 VGS=VDS 0,0118 Gate to Source Leakage Current Igss 0 20 Zero Gate Voltage Drain Current Idss 600 0 Turn On Delay Time Rise Time Turn off delay time Fall time td(ON) tr td(OFF) tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Total gate charge Qg Gate to source charge Qgs Gate to drain charge Qgd Input capacitance Ciss Rgoff=X Ω Rgon=X Ω Coss Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 600 0,009 2,4 3 Ω 3,6 400 20000 tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. V nA nA ns mWs 1160 0/10 480 178 Tj=25°C 144 nC 600 26120 f=1MHz Output capacitance 600 ±15 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 0 100 Tj=25°C pF 1440 Thermal grease thickness≤50um λ = 1 W/mK 0,20 K/W 0,13 Neutral Point Inv FWD ( D4 , D5 ) Diode forward voltage VF Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC copyright Vincotech 8 Thermal grease thickness≤50um λ = 1 W/mK Tj=25°C Tj=125°C 9,07 9,43 V 4,36 K/W 2,88 4 Revision: 1 70-W612A3C600SH-M600F target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 1,05 1,45 1,85 Neutral Point IGBT ( T2 ) Gate emitter threshold voltage VGE(th) VCE=VGE 0,0096 VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 600 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Collector-emitter saturation voltage Rise time Turn-off delay time Fall time 600 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 0,0304 2400 Rgoff=X Ω Rgon=X Ω 600 ±15 600 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω 0,5 tr td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. ns mWs 36960 f=1MHz 0 25 ±15 480 Tj=25°C 2304 Tj=25°C 3760 pF 1096 600 Thermal grease thickness≤50um λ = 1 W/mK nC 0,16 K/W 0,10 Neutral Point FWD ( D1 ) Diode forward voltage VF Reverse leakage current Ir Peak reverse recovery current 600 IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current 600 Rgon=X Ω 600 ±15 600 di(rec)max /dt Reverse recovered energy Erec Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Tj=25°C Tj=125°C Tj=25°C Tj=150°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1,2 1,60 1,9 3840 tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. Thermal grease thickness≤50um λ = 1 W/mK V μA A ns μC A/μs mWs 0,27 K/W 0,18 Buck Inverse FWD ( D13 ) Diode forward voltage Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current VF IRRM trr Qrr Rgon=X Ω 600 ±15 di(rec)max /dt Reverse recovery energy Erec Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC copyright Vincotech 15 Thermal grease thickness≤50um λ = 1 W/mK 600 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,25 1,6 tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. 1,95 V A ns μC A/μs mWs 2,94 K/W 1,94 5 Revision: 1 70-W612A3C600SH-M600F target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 1,55 1,80 2,08 Half Bridge IGBT ( T3 ) VCE=VGE Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off incl diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time Rise time Turn-off delay time Fall time 0,0152 400 tr tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 0,052 2400 Rgoff=X Ω Rgon=X Ω 600 ±15 600 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C V V mA nA Ω 1,88 td(on) td(off) Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. ns mWs 24600 f=1MHz 25 0 1620 Tj=25°C pF 1380 15 480 75 Tj=25°C 1920 Thermal grease thickness≤50um λ = 1 W/mK nC 0,18 K/W 0,12 Half Bridge Inverse FWD ( D6 ) Diode forward voltage VF Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 7 Tj=25°C Tj=125°C 2,49 1,99 Thermal grease thickness≤50um λ = 1 W/mK V 2,30 K/W 1,52 Half Bridge FWD ( D2 ) Diode forward voltage VF Reverse leakage current Ir Peak reverse recovery current 1200 IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current 300 Rgon=X Ω ±15 600 di(rec)max /dt Reverse recovery energy Erec Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC 600 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 2,14 2,46 360 tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. Thermal grease thickness≤50um λ = 1 W/mK V μA A ns μC A/μs mWs 0,30 K/W 0,20 DC link Capacitor ( C1 ) C value C 47 nF 22000 Ω Thermistor Rated resistance R Deviation of R25 ΔR/R Power dissipation P T=25°C R100=1486 Ω T=100°C Power dissipation constant -5 +5 % T=25°C 200 mW T=25°C 2 mW/K B-value B(25/50) Tol. ±3% T=25°C 3950 K B-value B(25/100) Tol. ±3% T=25°C 3996 K Vincotech NTC Reference copyright Vincotech B 6 Revision: 1 70-W612A3C600SH-M600F target datasheet Outline Outline copyright Vincotech 7 Revision: 1 70-W612A3C600SH-M600F target datasheet Ordering Code and Marking - Pinout Ordering Code & Marking Version without thermal paste 12mm housing Ordering Code 70-W612A3C600SH-M600F in DataMatrix as M600F in packaging barcode as M600F Pinout *Around low inductive side connections; top surface of the PCB copyright Vincotech 8 Revision: 1 70-W612A3C600SH-M600F target datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 9 Revision: 1