70-W612A3C600SH-M600F Maximum Ratings

70-W612A3C600SH-M600F
target datasheet
flowMNPC 4w
1200V/600A
Features
flowMNPC 4w housing
● High Efficient Advanced Paralleled NPC Topology
● Asymmetrical Inductance with Interface for
Optional Regeneration of Switching Losses
● High Power Screw Interface
● Integrated DC-Snubber Capacitors
● Temperature Sensor
Schematic
Target Applications
● Solar Inverter
● UPS
● High Frequency Motor Drive
Types
● 70-W612A3C600SH-M600F
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
117
156
A
600
A
173
262
W
Tjmax
175
°C
VDS
600
V
122
150
A
1088
A
354
537
W
Snubber FWD ( D3 )
Repetitive peak reverse voltage
VRRM
Forward current per diode
IFAV
DC current
Surge forward current
IFSM
tp=10ms
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Buck MOSFET ( T1 )
Drain to source breakdown voltage
DC drain current
Pulsed drain current
ID
IDpulse
Tj=Tjmax
Th=80°C
Tc=80°C
tp limited by Tjmax
Th=80°C
Tc=80°C
Power dissipation
Ptot
Gate-source peak voltage
VGS
±20
V
Tjmax
150
°C
Maximum Junction Temperature
copyright Vincotech
Tj=Tjmax
1
Revision: 1
70-W612A3C600SH-M600F
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
2
3
A
8
A
16
24
W
Tjmax
150
°C
VCE
600
V
Neutral Point Inv FWD ( D4 , D5 )
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tj=25°C
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Neutral Point IGBT ( T2 )
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
IC
ICpulse
Power dissipation per IGBT
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
Maximum Junction Temperature
tSC
VCC
Tj=Tjmax
Th=80°C
Tc=80°C
tp limited by Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Tj≤150°C
VGE=15V
Tjmax
405
535
A
1800
A
602
913
W
±20
V
6
360
μs
V
175
°C
600
V
142
182
A
1800
A
353
535
W
175
°C
600
V
18
20
A
tbd.
A
32
49
W
175
°C
Neutral Point FWD ( D1 )
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tj=25°C
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tjmax
Buck Inverse FWD ( D13 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
copyright Vincotech
VRRM
Tj=25°C
IF
Tj=Tjmax
IFRM
Ptot
Th=80°C
Tc=80°C
tp limited by Tjmax
Tj=Tjmax
Tjmax
2
Th=80°C
Tc=80°C
Revision: 1
70-W612A3C600SH-M600F
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
294
384
A
1200
A
531
805
W
±20
V
Tj≤150°C
10
μs
VGE=15V
800
V
175
°C
1200
V
12
15
A
28
A
32
48
W
150
°C
1200
V
172
231
A
1800
A
312
473
W
175
°C
25
V
Half Bridge IGBT ( T3 )
Collector-emitter break down voltage
DC collector current
VCE
IC
Th=80°C
Tc=80°C
Tj=Tjmax
Repetitive peak collector current
ICpuls
tp limited by Tjmax
Power dissipation per IGBT
Ptot
Tj=Tjmax
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
Th=80°C
Tc=80°C
Tjmax
Half Bridge Inverse FWD ( D6 )
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tc=25°C
IF
Tj=Tjmax
Th=80°C
Tc=80°C
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Tc=80°C
Tjmax
Half Bridge FWD ( D2 )
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tj=25°C
IF
Tj=Tjmax
Th=80°C
Tc=80°C
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Tc=80°C
Tjmax
DC link Capacitor ( C1 )
Max.DC voltage
VMAX
Tc=25°C
Thermal Properties
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Insulation Properties
Insulation voltage
copyright Vincotech
Vis
t=2s
DC voltage
3
Revision: 1
70-W612A3C600SH-M600F
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,2
1,6
1,9
Snubber FWD ( D3 )
Forward voltage
VF
Threshold voltage (for power loss calc. only)
Vto
600
Slope resistance (for power loss calc. only)
rt
600
Reverse current
Ir
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
200
600
tbd.
tbd.
tbd.
tbd.
V
Ω
0,66
Thermal grease
thickness≤50um
λ = 1 W/mK
V
mA
0,55
K/W
0,36
Buck MOSFET ( T1 )
Static drain to source ON resistance
Gate threshold voltage
RDS(on)
V(GS)th
178
10
VGS=VDS
0,0118
Gate to Source Leakage Current
Igss
0
20
Zero Gate Voltage Drain Current
Idss
600
0
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
td(ON)
tr
td(OFF)
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Input capacitance
Ciss
Rgoff=X Ω
Rgon=X Ω
Coss
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
600
0,009
2,4
3
Ω
3,6
400
20000
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
V
nA
nA
ns
mWs
1160
0/10
480
178
Tj=25°C
144
nC
600
26120
f=1MHz
Output capacitance
600
±15
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0
100
Tj=25°C
pF
1440
Thermal grease
thickness≤50um
λ = 1 W/mK
0,20
K/W
0,13
Neutral Point Inv FWD ( D4 , D5 )
Diode forward voltage
VF
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
copyright Vincotech
8
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
Tj=125°C
9,07
9,43
V
4,36
K/W
2,88
4
Revision: 1
70-W612A3C600SH-M600F
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Unit
Min
Typ
Max
5
5,8
6,5
1,05
1,45
1,85
Neutral Point IGBT ( T2 )
Gate emitter threshold voltage
VGE(th)
VCE=VGE
0,0096
VCE(sat)
15
Collector-emitter cut-off current incl. Diode
ICES
0
600
Gate-emitter leakage current
IGES
20
0
Integrated Gate resistor
Rgint
Turn-on delay time
td(on)
Collector-emitter saturation voltage
Rise time
Turn-off delay time
Fall time
600
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
0,0304
2400
Rgoff=X Ω
Rgon=X Ω
600
±15
600
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
V
mA
nA
Ω
0,5
tr
td(off)
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
ns
mWs
36960
f=1MHz
0
25
±15
480
Tj=25°C
2304
Tj=25°C
3760
pF
1096
600
Thermal grease
thickness≤50um
λ = 1 W/mK
nC
0,16
K/W
0,10
Neutral Point FWD ( D1 )
Diode forward voltage
VF
Reverse leakage current
Ir
Peak reverse recovery current
600
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
600
Rgon=X Ω
600
±15
600
di(rec)max
/dt
Reverse recovered energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,2
1,60
1,9
3840
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
Thermal grease
thickness≤50um
λ = 1 W/mK
V
μA
A
ns
μC
A/μs
mWs
0,27
K/W
0,18
Buck Inverse FWD ( D13 )
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
VF
IRRM
trr
Qrr
Rgon=X Ω
600
±15
di(rec)max
/dt
Reverse recovery energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
copyright Vincotech
15
Thermal grease
thickness≤50um
λ = 1 W/mK
600
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,25
1,6
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
1,95
V
A
ns
μC
A/μs
mWs
2,94
K/W
1,94
5
Revision: 1
70-W612A3C600SH-M600F
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Unit
Min
Typ
Max
5
5,8
6,5
1,55
1,80
2,08
Half Bridge IGBT ( T3 )
VCE=VGE
Gate emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCE(sat)
15
Collector-emitter cut-off incl diode
ICES
0
1200
Gate-emitter leakage current
IGES
20
0
Integrated Gate resistor
Rgint
Turn-on delay time
Rise time
Turn-off delay time
Fall time
0,0152
400
tr
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
0,052
2400
Rgoff=X Ω
Rgon=X Ω
600
±15
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
V
mA
nA
Ω
1,88
td(on)
td(off)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
ns
mWs
24600
f=1MHz
25
0
1620
Tj=25°C
pF
1380
15
480
75
Tj=25°C
1920
Thermal grease
thickness≤50um
λ = 1 W/mK
nC
0,18
K/W
0,12
Half Bridge Inverse FWD ( D6 )
Diode forward voltage
VF
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
7
Tj=25°C
Tj=125°C
2,49
1,99
Thermal grease
thickness≤50um
λ = 1 W/mK
V
2,30
K/W
1,52
Half Bridge FWD ( D2 )
Diode forward voltage
VF
Reverse leakage current
Ir
Peak reverse recovery current
1200
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
300
Rgon=X Ω
±15
600
di(rec)max
/dt
Reverse recovery energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
600
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
2,14
2,46
360
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
Thermal grease
thickness≤50um
λ = 1 W/mK
V
μA
A
ns
μC
A/μs
mWs
0,30
K/W
0,20
DC link Capacitor ( C1 )
C value
C
47
nF
22000
Ω
Thermistor
Rated resistance
R
Deviation of R25
ΔR/R
Power dissipation
P
T=25°C
R100=1486 Ω
T=100°C
Power dissipation constant
-5
+5
%
T=25°C
200
mW
T=25°C
2
mW/K
B-value
B(25/50) Tol. ±3%
T=25°C
3950
K
B-value
B(25/100) Tol. ±3%
T=25°C
3996
K
Vincotech NTC Reference
copyright Vincotech
B
6
Revision: 1
70-W612A3C600SH-M600F
target datasheet
Outline
Outline
copyright Vincotech
7
Revision: 1
70-W612A3C600SH-M600F
target datasheet
Ordering Code and Marking - Pinout
Ordering Code & Marking
Version
without thermal paste 12mm housing
Ordering Code
70-W612A3C600SH-M600F
in DataMatrix as
M600F
in packaging barcode as
M600F
Pinout
*Around low inductive side connections; top surface of the PCB
copyright Vincotech
8
Revision: 1
70-W612A3C600SH-M600F
target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Preliminary
Final
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Full Production
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
9
Revision: 1