FZ06NIA045FH target datasheet flowNPC 0 600V/75A & 45mΩ Features flow0 housing ● Neutral-point-Clamped inverter ● Ultra fast switching ● Clip-In PCB mounting ● Low Inductance Layout ● SiC Buck diode Target Applications Schematic ● Solar inverters Types ● FZ06NIA045FH Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V Polarity Switch IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current VCE IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C Th=80°C Tc=80°C Tj≤150°C VGE=15V Tjmax 65 225 105 A A W ±20 V 6 360 μs V 175 °C 600 V Polarity Switch Inverse Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature copyright by Vincotech Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C Th=80°C Tc=80°C 30 60 46 175 1 A A W °C Revision: 7 FZ06NIA045FH target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V Buck MOSFET Drain to source breakdown voltage DC drain current Pulsed drain current VDS ID IDpulse Tj=Tjmax tp limited by Tjmax 30 Th=80°C 230 Tc=80°C Th=80°C Tc=80°C 92 A A Power dissipation Ptot Gate-source peak voltage Vgs ±20 V Tjmax 150 °C 600 V Maximum Junction Temperature Tj=Tjmax Th=80°C Tc=80°C W Buck Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C Th=80°C Tc=80°C 20 64 41 A A W Tjmax 175 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+Tjmax - 25 °C 4000 VDC Creepage distance min 12,7 mm Clearance min 12,7 mm Maximum Junction Temperature Thermal Properties Insulation Properties Insulation voltage copyright by Vincotech Vis t=2s 2 Revision: 7 FZ06NIA045FH target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 4 5,8 7 1,5 1,67 2,55 Polarity Switch IGBT Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 600 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time VCE=VGE 75 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 0,5 650 tr td(off) 300 ±15 0 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Vcc=960 V Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness≤50um λ = 1 W/mK Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C V V mA nA Ω none LF switching only Fall time 0,0012 tbd tbd ns tbd tbd n.A. mWs n.A. 2360 f=1MHz 25 0 Tj=25°C 230 pF 125 15 40 Tj=25°C 192 nC 0,90 K/W Polarity Switch Inverse Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current LF switching only 300 ±15 di(rec)max /dt Reverse recovered energy Erec Thermal resistance chip to heatsink per chip RthJH copyright by Vincotech 30 Thermal grease thickness≤50um λ = 1 W/mK 0 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,6 tbd tbd tbd tbd tbd 2,1 3 2,2 V A ns nC A/μs mWs K/W Revision: 7 FZ06NIA045FH target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Min Typ Unit Max Buck MOSFET Static drain to source ON resistance Gate threshold voltage Gate to Source Leakage Current Turn On Delay Time Rise Time Turn off delay time Fall time Rds(on) V(GS)th 10 20 VGS=VDS Igss 0,003 20 0 td(ON) tr td(OFF) RG=4 Ω 400 10 15 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 0,04 2,1 3 0,045 3,9 100 28 28 5 6 154 166 10 8 0,063 0,071 0,025 0,022 Total gate charge Qg Gate to source charge Qgs Gate to drain charge Qgd 51 Input capacitance Ciss 6800 Output capacitance Coss Reverse transfer capacitance Crss Thermal resistance chip to heatsink per chip RthJH Ω V nA ns mWs 150 10 400 44 Tj=25°C nC 34 Tj=25°C pF 320 tbd Thermal grease thickness≤50um λ = 1 W/mK 0,68 K/W Buck Diode Diode forward voltage Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current VF 16 IRRM trr Qrr Rgon=4 Ω 10 400 di(rec)max /dt Reverse recovery energy Erec Thermal resistance chip to heatsink per chip RthJH 15 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1,68 1,92 17 15 9 10 58 91 4244 2981 0,005 0,016 Thermal grease thickness≤50um λ = 1 W/mK 1,8 V A ns nC A/μs mWs 2,34 K/W Thermistor Rated resistance Power dissipation given Epcos-Typ B-value copyright by Vincotech R25 Tol. ±13% Tj=25°C 19,1 22 24,9 R100 Tol. ±5% Tj=100°C 1411 1486 1560 P B(25/100) Tol. ±3% 4 kΩ Ω Tj=25°C 210 mW Tj=25°C 4000 K Revision: 7 FZ06NIA045FH target datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Standard in flow0 12mm housing Ordering Code 10-FZ06NIA045FH-P925F in DataMatrix as in packaging barcode as P925F P925F Outline Pinout copyright by Vincotech 5 Revision: 7 FZ06NIA045FH target datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by Vincotech 6 Revision: 7