FZ06NIA045FH Maximum Ratings

FZ06NIA045FH
target datasheet
flowNPC 0
600V/75A & 45mΩ
Features
flow0 housing
● Neutral-point-Clamped inverter
● Ultra fast switching
● Clip-In PCB mounting
● Low Inductance Layout
● SiC Buck diode
Target Applications
Schematic
● Solar inverters
Types
● FZ06NIA045FH
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
Polarity Switch IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
VCE
IC
ICpulse
Power dissipation per IGBT
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tj≤150°C
VGE=15V
Tjmax
65
225
105
A
A
W
±20
V
6
360
μs
V
175
°C
600
V
Polarity Switch Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tj=25°C
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
copyright by Vincotech
Tjmax
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
30
60
46
175
1
A
A
W
°C
Revision: 7
FZ06NIA045FH
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
Buck MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
VDS
ID
IDpulse
Tj=Tjmax
tp limited by Tjmax
30
Th=80°C
230
Tc=80°C
Th=80°C
Tc=80°C
92
A
A
Power dissipation
Ptot
Gate-source peak voltage
Vgs
±20
V
Tjmax
150
°C
600
V
Maximum Junction Temperature
Tj=Tjmax
Th=80°C
Tc=80°C
W
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tj=25°C
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
20
64
41
A
A
W
Tjmax
175
°C
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+Tjmax - 25
°C
4000
VDC
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Maximum Junction Temperature
Thermal Properties
Insulation Properties
Insulation voltage
copyright by Vincotech
Vis
t=2s
2
Revision: 7
FZ06NIA045FH
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Unit
Min
Typ
Max
4
5,8
7
1,5
1,67
2,55
Polarity Switch IGBT
Gate emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCE(sat)
15
Collector-emitter cut-off current incl. Diode
ICES
0
600
Gate-emitter leakage current
IGES
20
0
Integrated Gate resistor
Rgint
Turn-on delay time
td(on)
Rise time
Turn-off delay time
VCE=VGE
75
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
0,5
650
tr
td(off)
300
±15
0
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Vcc=960 V
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
V
mA
nA
Ω
none
LF switching only
Fall time
0,0012
tbd
tbd
ns
tbd
tbd
n.A.
mWs
n.A.
2360
f=1MHz
25
0
Tj=25°C
230
pF
125
15
40
Tj=25°C
192
nC
0,90
K/W
Polarity Switch Inverse Diode
Diode forward voltage
Peak reverse recovery current
VF
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
LF switching only
300
±15
di(rec)max
/dt
Reverse recovered energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
copyright by Vincotech
30
Thermal grease
thickness≤50um
λ = 1 W/mK
0
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,6
tbd
tbd
tbd
tbd
tbd
2,1
3
2,2
V
A
ns
nC
A/μs
mWs
K/W
Revision: 7
FZ06NIA045FH
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Unit
Max
Buck MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Rds(on)
V(GS)th
10
20
VGS=VDS
Igss
0,003
20
0
td(ON)
tr
td(OFF)
RG=4 Ω
400
10
15
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,04
2,1
3
0,045
3,9
100
28
28
5
6
154
166
10
8
0,063
0,071
0,025
0,022
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
51
Input capacitance
Ciss
6800
Output capacitance
Coss
Reverse transfer capacitance
Crss
Thermal resistance chip to heatsink per chip
RthJH
Ω
V
nA
ns
mWs
150
10
400
44
Tj=25°C
nC
34
Tj=25°C
pF
320
tbd
Thermal grease
thickness≤50um
λ = 1 W/mK
0,68
K/W
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
VF
16
IRRM
trr
Qrr
Rgon=4 Ω
10
400
di(rec)max
/dt
Reverse recovery energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,68
1,92
17
15
9
10
58
91
4244
2981
0,005
0,016
Thermal grease
thickness≤50um
λ = 1 W/mK
1,8
V
A
ns
nC
A/μs
mWs
2,34
K/W
Thermistor
Rated resistance
Power dissipation given Epcos-Typ
B-value
copyright by Vincotech
R25
Tol. ±13%
Tj=25°C
19,1
22
24,9
R100
Tol. ±5%
Tj=100°C
1411
1486
1560
P
B(25/100)
Tol. ±3%
4
kΩ
Ω
Tj=25°C
210
mW
Tj=25°C
4000
K
Revision: 7
FZ06NIA045FH
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Standard in flow0 12mm housing
Ordering Code
10-FZ06NIA045FH-P925F
in DataMatrix as
in packaging barcode as
P925F
P925F
Outline
Pinout
copyright by Vincotech
5
Revision: 7
FZ06NIA045FH
target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Preliminary
Final
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Full Production
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright by Vincotech
6
Revision: 7