CEP703ALS2/CEB703ALS2

CEP703ALS2/CEB703ALS2
PRELIMINARY
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
D
30V , 40A , RDS(ON)=17m Ω @VGS=10V.
RDS(ON)=30m Ω @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
G
TO-220 & TO-263 package.
D
G
S
G
D
S
CEB SERIES
TO-263(DD-PAK)
S
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Symbol
Parameter
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
Ć20
V
ID
40
A
IDM
120
A
Drain-Source Diode Forward Current
IS
40
A
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
PD
50
0.4
W
W/ C
Operating and StorageTemperature Range
TJ, TSTG
-65 to 175
C
Drain Current-Continuous
-Pulsed
15
Limit
@TJ=125 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
RįJC
3
C /W
Thermal Resistance, Junction-to-Ambient
RįJA
62.5
C /W
15-12
CEP703ALS2/CEB703ALS2
ELECTRICAL CHARACTERISTICS (TC= 25 C unless otherwise noted)
Parameter
Symbol
Condition
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V,ID = 250µA
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
VDS = 24V, VGS = 0V
VGS = Ć20V, VDS = 0V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
Drain-Source On-State Resistance
RDS(ON)
On-State Drain Current
ID(ON)
g FS
Min Typ Max Unit
OFF CHARACTERISTICS
30
V
10
µA
Ć100
nA
1.7
3
V
VGS = 10V, ID = 25A
14
17
mΩ
VGS = 4.5V, ID = 10A
22
30
mΩ
ON CHARACTERISTICS a
Forward Transconductance
VGS = 10V, VDS = 10V
VDS = 10V, ID = 25A
1
A
60
30
S
DYNAMIC CHARACTERISTICSb
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
1150 1500
PF
540
700
PF
230
300
PF
18
23
ns
120
180
ns
80
120
ns
b
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
VDD = 15V,
ID = 25A,
VGS = 10V,
RGEN =24 Ω
Fall Time
tf
60
165
ns
Total Gate Charge
Qg
30
50
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =10V, ID = 25A,
VGS =10V
15-13
6
nC
7
nC
15
CEP703ALS2/CEB703ALS2
BODY DIODE & SCHOTTKY DIODE RATINGS AND CHARACTERISTICS
Parameter
Min Typ Max Unit
Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS a
Body Diode Forward Voltage
VSD
VGS = 0V, Is =25A
1.3
V
Schottky Forward Voltage
VF
IF=2A, Tc=25 C
0.55
V
Average Forward Rectified Current
IF(AV)
2
A
Notes
a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.
40
40
25 C
VGS=10,9,8,7,6,5V
VGS=4V
30
ID, Drain Current (A)
ID, Drain Current (A)
35
25
20
15
10
VGS=3V
5
0
0.5
1.0
1.5
2.0
2.5
20
10
-55 C
0
3.0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3600
RDS(ON), Normalized
Drain-Source, On-Resistance
3.0
3000
C, Capacitance (pF)
TJ=125 C
0
0
15
30
2400
1800
1200
Ciss
600
Coss
Crss
0
0
5
10
15
20
25
30
VGS=10V
2.5
2.0
Tj=125 C
1.5
25 C
1.0
0.5
0
-55 C
0
10
20
30
40
ID, Drain Current(A)
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
15-14
1.15
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
CEP703ALS2/CEB703ALS2
VDS=VGS
ID=250ijA
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75 100 125 150
1.06
1.04
ID=250ijA
1.02
1.00
0.98
0.96
0.94
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
40
30
25
Is, Source-drain current (A)
gFS, Transconductance (S)
VDS=10V
20
15
10
5
10
1.0
0.1
0
0
10
20
30
0.4
40
IDS, Drain-Source Current (A)
1.0
1.2
1.4
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
300
200
100
VDS=10V
ID=25A
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
0.8
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
8
0.6
6
4
2
0
10
N)
it
Lim
10
1m
O
S(
RD
0ij
ij
s
s
s
10
m
DC s
10
15
VGS=10V
Single Pulse
Tc=25 C
1
0.5
0
4
8
12
16 20
24
28 32
0.1
Qg, Total Gate Charge (nC)
1
10
30
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
15-15
60
CEP703ALS2/CEB703AL2
VDD
t on
td(on)
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
3. TJM-TA = PDM* RįJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
0.01
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
15
15-16
10000