CEM4207

CEM4207
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-40V, -7A, RDS(ON) = 30mΩ @VGS = -10V.
RDS(ON) = 40mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
D1
8
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
-40
Units
V
Gate-Source Voltage
VGS
±20
V
ID
-7
A
IDM
-28
A
PD
2
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
62.5
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Dec
http://www.cetsemi.com
CEM4207
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-40
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -40V, VGS = 0V
-1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
-3
V
VGS = -10V, ID = -6A
-1
24
30
mΩ
VGS = -4.5V, ID = -4A
32
40
mΩ
Dynamic Characteristics c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -20V, VGS = 0V,
f = 1.0 MHz
1760
pF
220
pF
155
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
16
32
ns
6
12
ns
ns
61
122
Turn-Off Fall Time
tf
15
30
ns
Total Gate Charge
Qg
18
23
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -20V, ID = -4.1A,
VGS = -10V
5
nC
7
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = -1.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
-1.5
A
-1.2
V
CEM4207
P-CHANNEL
10
10
8
6
-VGS=3.0V
4
2
0
0
0.5
1
1.5
2
0
-55 C
1
2
3
4
5
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
1200
800
Coss
400
Crss
0
5
10
15
20
25
2.2
1.9
ID=-6A
VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
TJ=125 C
-VGS, Gate-to-Source Voltage (V)
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
25 C
2
2.5
1600
1.2
4
-VDS, Drain-to-Source Voltage (V)
2000
1.3
6
0
2400
0
8
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=10,6,5,4V
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=-20V
ID=-4.1A
6
4
2
0
0
10
2
10
1
RDS(ON)Limit
8
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CEM4207
4
8
12
16
20
10ms
100ms
1s
10
0
10
-1
10
-2
DC
TC=25 C
TJ=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
td(off)
tf
90%
90%
VOUT
VGS
RGEN
toff
tr
td(on)
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
PDM
0.1
-1
t1
0.05
0.02
10
Single Pulse
-2
10
-4
10
-3
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
2