CEM2401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 1 S 2 S 3 S 4 G Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -20 Units V Gate-Source Voltage VGS ±12 V ID -6 A IDM -20 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 50 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 3. 2010.Mar http://www.cetsemi.com Details are subject to change without notice . 1 CEM2401 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -20V, VGS = 0V -1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) Dynamic Characteristics d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = VDS, ID = -250µA -1 V VGS = -4.5V, ID = -4A 35 44 mΩ VGS = -2.5V, ID = -3.2A 50 65 mΩ VDS = -5.0V, ID = -4A VDS = -10V, VGS = 0V, f = 1.0 MHz -0.5 10 S 965 pF 200 pF 155 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -10V, ID = -4A, VGS = -4.5V, RGEN = 3Ω 15 30 ns 10 20 ns 40 80 ns Turn-Off Fall Time tf 13 26 ns Total Gate Charge Qg 13 17 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -10V, ID = -4A, VGS = -4.5V 2.5 nC 3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.0A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -2.5 A -1.0 V CEM2401 15 10 25 C -VGS=2.5V 8 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=4.5,-4.0,-3.5V 12 9 -VGS=2V 6 3 6 4 TJ=125 C 2 -55 C 0 0 0.5 1 1.5 2 0 2.5 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 500 Coss 250 Crss 5 10 15 20 25 30 2.5 3.0 2.2 1.9 ID=-4A VGS=-4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2.0 Figure 2. Transfer Characteristics 750 1.2 1.5 Figure 1. Output Characteristics 1000 1.3 1.0 -VGS, Gate-to-Source Voltage (V) 1250 0 0.5 -VDS, Drain-to-Source Voltage (V) 1500 0 0.0 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 V =-10V DS ID=-4A 4 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM2401 3 2 1 0 0 3 6 9 12 15 10 2 10 1 10 0 10 -1 10 -2 RDS(ON)Limit 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 Single Pulse 10 -3 10 -4 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2