CEP4060AL/CEB4060AL

CEP4060AL/CEB4060AL
March 1998
N-Channel Enhancement Mode Field Effect Transistor
4
FEATURES
D
60V , 15A , RDS(ON)=80m Ω @VGS=10V.
RDS(ON)=85m Ω @VGS=5.0V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
S
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
Ć20
V
Parameter
Drain Current-Continuous
-Pulsed
ID
15
A
IDM
45
A
Drain-Source Diode Forward Current
IS
15
A
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
PD
50
0.3
W
W/ C
TJ, TSTG
-65 to 175
C
Thermal Resistance, Junction-to-Case
RįJC
3
C/W
Thermal Resistance, Junction-to-Ambient
RįJA
62.5
C/W
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
4-67
CEP4060AL/CEB4060AL
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
4
Parameter
Min Typ Max Unit
Symbol
Condition
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = 60V, VGS = 0V
25
µA
Gate-Body Leakage
IGSS
VGS =Ć16V, VDS = 0V
Ć100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.5
2
V
Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =15A
63
80
mΩ
VGS = 5V, ID =7.5A
78
85
mΩ
OFF CHARACTERISTICS
60
V
ON CHARACTERISTICS a
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
VGS = 5V, VDS = 10V
VDS = 10V, ID = 7.5A
1
A
15
11
S
480
PF
130
PF
30
PF
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS = 0V
f =1.0MHZ
b
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
VDD = 30V,
ID =15A,
VGS = 5V,
RGEN =51 Ω
8
20
ns
140
250
ns
30
100
ns
Fall Time
tf
60
150
ns
Total Gate Charge
Qg
13
17
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =48V, ID = 15A,
VGS =10V
4-68
2.6
nC
3.2
nC
CEP4060AL/CEB4060AL
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
Symbol
4
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VGS = 0V, Is =7.5A
VSD
0.9
1.3
Notes
a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.
12
20
-55 C
VGS=10,9,8,7,6,5,4V
ID, Drain Current (A)
ID, Drain Current(A)
10
8
VGS=3V
6
4
2
0
25 C
15
Tj=125 C
10
5
0
0
0.5
1.0
1.5
2.0
2.5
1
3.0
VDS, Drain-to-Source Voltage (V)
3
4
5
6
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
900
3.0
RDS(ON), Normalized
Drain-Source On-Resistance
C, Capacitance (pF)
2
VGS, Gate-to-Source Voltage (V)
750
600
Ciss
450
300
Coss
150
Crss
0
0
10
20
30
40
VGS=5V
2.5
2.0
Tj=125 C
1.5
25 C
1.0
-55 C
0.5
0
50
0
5
10
15
20
25
ID, Drain Current (A)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
4-69
V
10
VDS=48V
ID=15A
8
6
4
2
0
0
2
4
6
8
10 12 14 16
4-70
CEP4060AL/CEB4060AL
4
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
1. RįJC (t)=r (t) * RįJC
2. RįJC=See Datasheet
3. TJM-TC = P* RįJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
0.01
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
4-71
10000