TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Introduction Technical Note Migrating from Spansion's S25FL128S to Micron's N25Q 128Mb Flash Device Introduction This technical note compares the features of the Micron® N25Q (128Mb) and Spansion S25FL128S Flash memory devices. Features compared include memory organization, package options, signal descriptions, software command set, electrical specifications, and device identification. PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. All information discussed herein is provided on an "as is" basis, without warranties of any kind. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Memory Array Architecture Memory Array Architecture Table 1: Device Comparison N25Q Features S25FL128S Features Program 1 to 256 bytes Program 1 to 256 bytes 1 Uniform sector erase (64KB) Uniform sector erase (64KB) 1 Uniform subsector erase (4KB) Uniform 4KB granularity available on boot sectors only (top or bottom ) 2 Cycling endurance 100,000 Cycling endurance 100,000 Data retention 20 years Data retention 20 years Notes: Notes 1. For the S25FL128S device, program 512K and uniform sector erase 256KB supported on specific part numbers. 2. On the S25FL128S device, the granularity at 4KB is available for top and bottom sectors only; the remaining sectors must erase at 64KB. Package Configurations Table 2: Package Configurations Package (JEDEC code) N25Q S25FL128S V-PDFN8 (8mm x 6mm) Yes Yes V-PDFN8 (6mm x 5mm) "SAWN" Yes No SOP2-8/208 mils Yes No SOP2-16/300 mils Yes Yes T-PBGA-24b05 (6mm x 8mm, 5 x 5 ball) Yes Yes T-PBGA-24b05 (8mm x 6mm, 4 x 6 ball) Yes Yes KGD Yes Yes PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Signal Descriptions Signal Descriptions Table 3: Signal Descriptions N25Q S25FL128S Type Description C SCLK Input Serial clock S# CS# Input Chip select – RESET# Input Hardware reset DQ0 SI/IO0 Input or I/O Serial data input or I/O HOLD#/DQ3 HOLD#/SIO3 Input or I/O HOLD or I/O 2 W#/VPP/DQ2 WP#/IO2 Input or I/O Write protect/enhanced program supply voltage or I/O 3 DQ1 SO/IO1 Output or I/O VCC VCC Power Supply voltage – VIO Power Versatile I/O power supply VSS GND Ground Notes: PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN Notes 1 Serial data output or I/O Ground 1. RESET functionality is available on Spansion devices with a dedicated part number. 2. RESET functionality is available on devices with a dedicated part number. For the N25Q device, RESET# takes the place of HOLD#. 3. VPP is not available on the S25FL128S device. 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Commands Commands Table 4: Command Set N25Q Command Code S25FL128S Command Code RESET ENABLE 66h N/A RESET MEMORY 99h F0h Command Notes RESET Operations PERFORMANCE ENHANCE MODE RESET FFh 1 IDENTIFICATION Operations READ ID 9E/9Fh 9Fh MULTIPLE I/O READ ID AFh N/A READ ELECTRONICS SIGNATURE N/A ABh READ MAN and DEV ID N/A 90h READ SERIAL FLASH DISCOVERY PARAMETER 5Ah N/A READ 03h 03h FAST READ 0Bh 0Bh DUAL OUTPUT FAST READ 3Bh 3Bh/3C DUAL INPUT/OUTPUT FAST READ BBh BBh QUAD OUTPUT FAST READ 6Bh 6Bh QUAD INPUT/OUTPUT FAST READ EBh EBh WRITE ENABLE 06h 06h WRITE DISABLE 04h 04h READ STATUS REGISTER 05h 05h READ STATUS REGISTER 2 N/A 07h WRITE STATUS REGISTER 01h 01h READ LOCK REGISTER E8h E0h WRITE LOCK REGISTER E5h E1h 3 READ FLAG STATUS REGISTER 70h N/A 4 CLEAR FLAG STATUS REGISTER 50h 30h 5 READ NONVOLATILE CONFIGURATION REGISTER B5h N/A WRITE NONVOLATILE CONFIGURATION REGISTER B1h N/A READ VOLATILE CONFIGURATION REGISTER 85h N/A WRITE VOLATILE CONFIGURATION REGISTER 81h N/A READ ENHANCED VOLATILE CONFIGURATION REGISTER 65h N/A WRITE ENHANCED VOLATILE CONFIGURATION REGISTER 61h N/A N/A 2Bh READ Operations WRITE Operations REGISTER Operations 2 Misc. Operations ASP REGISTER READ PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Commands Table 4: Command Set (Continued) N25Q Command Code S25FL128S Command Code ASP REGISTER WRITE N/A 2Fh READ CONFIGURATION REGISTER N/A 35h AUTOBOOT REGISTER READ N/A 14h Command AUTOBOOT REGISTER WRITE N/A 15h PPB LOCK BIT WRITE N/A A6h PPB LOCK BIT READ N/A A7h PPB READ N/A E2h PPB PROGRAM N/A E3h PPB ERASE N/A E4h PASSWORD READ N/A E7h PASSWORD PROGRAM N/A E8h PASSWORD UNLOCK N/A E9h READ DATA LEARNING PATTERN N/A 41h PROGRAM NV DATA LEARNING REGISTER N/A 43h WRITE VOLATILE DATA LEARNING REGISTER N/A 4Ah PAGE PROGRAM 02h 02h DUAL INPUT FAST PROGRAM A2h N/A EXTENDED DUAL INPUT FAST PROGRAM D2h N/A QUAD INPUT FAST PROGRAM 32h 32h/38h EXTENDED QUAD INPUT FAST PROGRAM 12h N/A BULK ERASE C7h C7h/60h SECTOR ERASE – 64KB D8h D8h SUB-SECTOR ERASE – 4KB 20h 20h PROGRAM/ERASE SUSPEND 75h 85h/75h PROGRAM/ERASE RESUME 7Ah 8Ah/7Ah READ OTP ARRAY 4Bh 4Bh PROGRAM OTP ARRAY 42h 42h DEEP POWER-DOWN B9h N/A RELEASE FROM DEEP POWER-DOWN ABh N/A Notes PROGRAM Operations ERASE Operations ONE-TIME PROGRAMMABLE (OTP) Operations DEEP POWER-DOWN Notes: PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 1. Execution in place (XIP) device reset; see the Execute in Place (XIP) section for more details. 2. The name of this command in the S25FL128S data sheet is DYB READ. 3. The name of this command in the S25FL128S data sheet is DYB WRITE. 4. The S25FL128S configuration register is not compatible with the N25Q device. 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Commands 5. Program/erase error bits are cleared by CLEAR FLAG STATUS REGISTER on the N25Q device. The S25FL128S device performs the same in status register 1. Table 5: Different Commands Sharing Same Command Code Command Code N25Q 128Mb Command S25F12835F Command ABh RELEASE FROM DEEP POWER-DOWN READ ELECTRONIC SIGNATURE B9h DEEP POWER-DOWN BANK REGISTER ACCESS E8h READ LOCK REGISTER PASSWORD PROGRAM 85h READ VOLATILE CONFIGURATION REGISTER PROGRAM/ERASE SUSPEND READ Commands The READ command set for the N25Q and S25FL128S devices is identical. Both devices follow the standard three address byte protocol. Both devices have configurable dummy cycles. The S25FL128S device dummy cycles can be configured by configuration register bits 7 and 8; the N25Q device dummy cycles can be configured by nonvolatile configuration register bits 12–15 or by volatile configuration register bits 7–4. Table 6: Minimum Number of Dummy Cycles Required per Each Frequency Frequency DUAL OUTPUT FAST READ FAST READ DUAL I/O FAST READ QUAD OUTPUT FAST READ QUAD I/O FAST READ MHz N25Q S25FL N25Q S25FL N25Q S25FL N25Q S25FL N25Q S25FL ≤50 1 0 1 0 1 4 2 0 3 1 ≤80 1 8 1 8 3 4 4 8 6 4 ≤90 1 8 2 8 4 5 4 8 8 4 ≤104 3 8 4 8 6 6 6 8 9 5 ≤133 – 8 – – – – – – – – Note: 1. The S25FL128S device has one additional clock for mode bits in QUAD I/O FAST READ only. The S25FL128S device requires a nonvolatile quad bit in the configuration register to enable QUAD I/O functionality. When this bit is set, HOLD# and WP# are disabled. VECR or NVCR bits enable the QSPI protocol. See the product data sheet for more information. QUAD commands are available without any register setting. When VECR or NVCR bits are set, W# and HOLD# remain functional. With NVCR set (bit 3 = 0), the device can be powered up or down with QUAD I/O functionality. No additional commands are required for the N25Q device to use QUAD or DUAL I/O functionality. The manufacturer ID, memory type, and memory capacity for both devices can be read by issuing the 9Fh command. Additionally, the N25Q outputs this data when the 9Eh command is issued. The S25FL128S device has a command that outputs the device ID (ABh) and a command that outputs the manufacturer ID and device ID (90h). PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Execute in Place (XIP) Execute in Place (XIP) The N25Q device enters and exits XIP mode via volatile and nonvolatile configuration register settings. The nonvolatile configuration register sets XIP mode at device power on. After it is enabled, XIP management in the N25Q device is identical to that of the S25FL128S device. The S25FL128S device uses one nibble (code Ah) to enter or exit XIP mode. This solution is compatible with the N25Q methodology of entering and exiting XIP mode because other bits are "Don't Care". Table 7: XIP Mode N25Q S25FL128S Fast read Mode Yes N/A Dual output fast read Yes N/A Dual I/O fast read Yes YES Quad output fast read Yes N/A Quad I/O fast read Yes Yes Figure 1: XIP Timing Configuration Confirmation bits [7:0] CS# 0 7 8 12 13 14 15 19 20 21 22 23 C LSB 7 0 A[MIN] 20 4 0 4 DQ1 21 5 1 5 DQ2 22 6 2 6 DQ3 23 7 3 7 DQ0 LSB 0 4 0 4 5 1 5 6 2 6 7 3 7 MSB 1 2 3 A[MAX] MSB Dummy cycles Table 8: XIP Confirmation Bit Software Commands XIP Confirmation Bit N25Q S25FL128S Enter/confirm XIP mode B4 = 0 (B7:B5 and B3:B0 = "Don't Care") Mode bits = Ah; B7 = 1; B6 = 0; B5 = 1; B4 = 0 Exit XIP mode B4 = 1 (B7:B5 and B3:B0 = "Don't Care") Mode bit ≠ Ah PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Execute in Place (XIP) XIP and Protocol Exiting Algorithm To reset XIP mode on the S25FL128S device, using command FFh for N25Q, follow the procedure below. Note: This sequence is required when power loss occurs because the device may start in an undetermined state (XIP or unnecessary protocol). 1. Perform the XIP exit sequence. 2. Perform the dual SPI protocol exit sequence. Note: During the execution of the WRITE NONVOLATILE CONFIGURATION REGISTER command, tSHSL2 must be at least 50ns. XIP Exiting Sequence Below is the reset sequence for all possible XIP configurations (quad I/O, dual I/O, and fast read). Figure 2: XIP Exiting Sequence 0 6 7 8 16 17 18 30 31 32 48 49 50 74 75 76 108 109 C S# DQ0 DQ3 Dual SPI Protocol Exiting Sequence Exit from dual (DIO-SPI) or quad (QIO-SPI) protocol using the following FFh sequence. Figure 3: Dual SPI Protocol Exiting Sequence 0 1 2 3 4 5 6 7 8 C S# DQ0 DQ3 PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Electrical Characteristics Electrical Characteristics Table 9: DC Current Characteristics N25Q Parameter Symbol S25FL128S Min Max Min Max Unit Notes 1 Standby current ICC1 – 100 – 100 µA Operating current (fast read quad I/O) ICC3 – 20 – 61 mA Operating current (page program) ICC4 – 20 – 100 mA Operating current (write status register) ICC5 – 20 – 100 mA Operating current (erase) ICC6 – 20 – 100 mA Note: 1. Standby current for the S25FL automotive device is 300µA. Table 10: DC Voltage Specifications N25Q Parameter S25FL128S Symbol Min Max Min Max Unit Input low voltage ViL –0.5 0.3 VCC –0.5 0.2 VCC V Input high voltage ViH 0.7 VCC VCC + 0.4 0.7 VCC VCC + 0.4 V Output low voltage VOL – 0.4 – 0.15 VCC V Output high voltage VOH VCC - 0.2 – VCC - 0.2 – V AC Characteristics Table 11: AC Specifications N25Q S25FL128S Symbol Alternate Symbol Min Max Min Max Unit Clock frequency (x1 fast read) fC fC – 108 – 133 MHz Clock frequency (x2, x4 fast read) fC fC – 108 – 104 MHz Clock frequency (read) fR fR – 54 – 50 MHz S# active setup time tSLCH tCSS 4 – 3 – ns Data-in setup time tDVCH tDSU 2 – 3 – ns Data-in hold time tCHDX tDH 3 – 2 – ns S# deselect time after correct read (array read to array read) tSHSL tCSH 50 – 50 – ns Output disable time (2.7–3.6V) tSZQZ tDIS – 8 – 8 ns Clock low to output valid (30pF) tCLQV tV – 7 – 8 ns Output hold time tCLQX tHO 1 - 0 – ns HOLD to output Low-Z tHHQX tLZ – 8 N/A 8 ns HOLD to output High-Z tHLQZ tHZ – 8 N/A 8 ns Parameter Note: PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 1. AC specifications compare the fastest versions available at the full voltage range (2.7– 3.6V). 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Program and Erase Specifications Program and Erase Specifications Table 12: Program and Erase Specifications N25Q Operation Typ S25FL128S Max Typ Max Unit PAGE PROGRAM (256 bytes) 0.5 5 0.25 0.75 ms 4KB SUBSECTOR ERASE 0.25 0.8 0.13 0.65 s 64KB SECTOR ERASE 0.7 3 0.13 0.65 s BULK ERASE 170 250 33 165 s Configuration and Memory Map Table 13: Sectors and Subsectors Address Range Sector Subsector Start End 255 4095 00FF F000h 00FF FFFFh : : : 4080 00FF 0000h 00FF 0FFFh : : : : 127 2047 007F F000h 007F FFFFh : : : 2032 007F 0000h 007F 0FFFh : : : : 63 1023 003F F000h 003F FFFFh : : : 1008 003F 0000h 003F 0FFFh : : : : 0 15 0000 F000h 0000 FFFFh : : : 0 0000 0000h 0000 0FFFh PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Device Identification Device Identification Manufacturer identification is assigned by JEDEC. As a result, the N25Q and S25FL128S devices have a different manufacturer ID and memory type code even though their memory capacity is identical. Command 9Fh is used to read these codes in both devices. The N25Q device has a unique ID (UID) composed of 17 read-only bytes, which contains the following data: • The first byte is set to 10h. • The next two bytes of extended device ID specify device configuration (top, bottom, or uniform architecture and HOLD or RESET functionality). • The next 14 bytes contain optional customized factory data. The customized factory data bytes are factory programmed. Refer to the N25Q 128Mb data sheet for more information. Table 14: Read Identification Summary PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN Parameter N25Q Code S25FL128S Code Manufacturer ID 20h 01h Memory type BAh 20h Memory capacity 18h 18h 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Part Numbers Part Numbers Table 15: Cross Reference of Part Numbers Micron Part Number Spansion Part Number1 Package Secure Media N25Q128A13E1240E S25FL128SAGBFIA00 T-PBGA No Tray Notes N25Q128A13E1240F S25FL128SAGBFIA03 T-PBGA No Tape and Reel N25Q128A13E1241E N/A T-PBGA Yes Tray 2 N25Q128A13E1241F N/A T-PBGA Yes Tape and Reel 2 N25Q128A813E12A0F S25FL128SAGBFVA00 T-PBGA No Tape and Reel N25Q128A813EF740E S25FL128SAGBFIA13 V-PDFN-8 No Tray N25Q128A13EF740F N/A V-PDFN-8 No Tape and Reel N25Q128A13EF840E S25FL128SAGNFI000 V-PDFN-8 No Tray N25Q128A13EF840F S25FL128SAGNFI003 V-PDFN-8 No Tape and Reel N25Q128A13EF8A0F S25FL128SAGNFV003 V-PDFN-8 No Tape and Reel N25Q128A13ESE40E N/A SO8 Wide No Tray N25Q128A13ESE40F N/A SO8 Wide No Tape and Reel N25Q128A13ESE40G N/A SO8 Wide No Tube N25Q128A13ESF40E S25FL128SAGMFI000 SO16 Wide No Tray N25Q128A13ESF40F S25FL128SAGMFI003 SO16 Wide No Tape and Reel N25Q12813ESF40G S25FL128SAGMFI001 SO16 Wide No Tube N25Q128A13ESFA0F S25FL128SAGMFV000 SO16 Wide No Tape and Reel N25Q128A13ESFH0E N/A SO16 Wide No Tray 5 N25Q128A13ESFH0F N/A SO16 Wide No Tape and Reel 5 KGD Yes N25Q128A13EV740 Notes: 3 4 6 1. All Spansion part numbers include 64KB UNIFORM SECTOR ERASE, footprint with RESET# and VIO. 2. Spansion device does not support secure release. 3. Spansion device does not support SAWN package. 4. Spansion device does not support SOP2-8/208 mils package. 5. Spansion device does not support automotive ews flow. 6. Information for part number code KGD not provided in Spansion data sheet. Conclusion Comparing features of the Micron N25Q 128Mb and Spansion S25FL128S Flash memory devices enables users to migrate applications from the S25FL128S to the N25Q 128Mb device. PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. TN-12-31: Migrating to Micron's N25Q 128Mb Flash Device Revision History Revision History Rev. A – 07/13 • Initial release 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef85496ec4 tn1231_N25Q_128_migration.pdf - Rev. A 07/13 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved.