TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Introduction Technical Note Migrating from EON's EN25QH256 to Micron's N25Q 256Mb Flash Device Introduction The purpose of this technical note is to compare features of the Micron® N25Q (256Mb) and EON EN25QH256 Flash memory devices. Features compared include memory organization, package options, signal descriptions, the software command set, electrical specifications, and device identification. PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. All information discussed herein is provided on an "as is" basis, without warranties of any kind. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Memory Array Architecture Memory Array Architecture Table 1: Device Comparison N25Q Features EN25Q Features Program 1 to 256 bytes Program 1 to 256 bytes Uniform sector erase (64KB) Uniform sector erase (64KB) Uniform subsector erase (4KB) Uniform subsector erase (4KB) Cycling endurance 100,000 Cycling endurance 100,000 Data retention 20 years Data retention 20 years Package Configurations Table 2: Package Configurations Package (JEDEC code) N25Q 256Mb EN25Q V-PDFN8 (8mm x 6mm) Yes Yes SOP2-16/300 mil Yes Yes T-PBGA24b05 (6mm x 8mm, 5 x 5 ball) Yes Yes Signal Descriptions Table 3: Signal Descriptions N25Q Signal EN25Q Signal Type C CLK Input DQ0 DI Input or I/O DQ1 DO Output or I/O Description Serial data input or I/O Serial data output or I/O S# CS# Input W#/VPP/DQ2 WP#/DQ2 Input or I/O Write protect/enhanced program supply voltage or I/O HOLD#/DQ3 HOLD#/DQ3 Input or I/O HOLD or I/O VCC VCC Input Supply voltage VSS VSS Input Ground Note: PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN Notes Serial clock Chip select 1 1. VPP is not available on the EN25Q device. 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Commands Commands Table 4: Command Set Command Code N25Q Command Code EN25Q READ ENABLE 66h 66h RESET MEMORY 99h 99h RESET QUAD I/O N/A FFh Command Notes RESET Operations 1 IDENTIFICATION Operations READ ID 9E/9Fh 90h/9Fh MULTIPLE I/O READ ID AFh N/A READ DEVICE ID N/A ABh READ SERIAL FLASH DISCOVERY PARAMETER 5Ah 5Ah READ 03h 03h FAST READ 0Bh 0Bh DUAL OUTPUT FAST READ 3Bh 3Bh DUAL INPUT/OUTPUT FAST READ BBh BBh QUAD OUTPUT FAST READ 6Bh N/A QUAD INPUT/OUTPUT FAST READ EBh EBh FAST_READ.DTR 0Dh N/A 3 DUAL OUTPUT FAST READ DTR 3Dh N/A 3 DUAL INPUT/OUTPUT FAST READ DTR BDh N/A 3 QUAD OUTPUT FAST READ DTR 6Dh N/A 3 QUAD INPUT/OUTPUT FAST READ DTR EDh N/A 3 ENTER 4-BYTE ADDRESSING B7h B7h EXIT 4-BYTE ADDRESSING E9h E9h 4-BYTE READ 13h N/A 4-BYTE FAST_READ 0Ch N/A 4-BYTE DUAL OUTPUT FAST READ 3Ch N/A 4-BYTE DUAL INPUT/OUTPUT FAST READ BCh N/A 4-BYTE QUAD OUTPUT FAST READ 6Ch N/A 4-BYTE QUAD INPUT/OUTPUT FAST READ ECh N/A 4-BYTE Page Program 02h N/A 4 BYTE Quad Page Program 32h N/A 4-BYTE Sector Erase – 64KB D8h N/A 4-BYTE Sub-Sector Erase – 4KB 20h N/A ENTER HIGH BANK LATCH MODE N/A 67h 5 EXIT HIGH BANK LATCH MODE N/A 98h 5 2 READ Operations 4-BYTE ADDRESS MODE Operations PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 3 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Commands Table 4: Command Set (Continued) Command Code N25Q Command Code EN25Q Notes N/A 38h 6 WRITE ENABLE 06h 06h WRITE DISABLE 04h 04h READ STATUS REGISTER 05h 05h WRITE STATUS REGISTER 01h 01h READ INFORMATION REGISTER N/A 2Bh READ LOCK REGISTER E8h N/A WRITE LOCK REGISTER E5h N/A READ FLAG STATUS REGISTER 70h N/A CLEAR FLAG STATUS REGISTER 50h N/A READ NONVOLATILE CONFIGURATION REGISTER B5h N/A WRITE NONVOLATILE CONFIGURATION REGISTER B1h N/A READ VOLATILE CONFIGURATION REGISTER 85h N/A Command ENABLE QUAD PERIPHERAL INTERFACE MODE (EQPI) WRITE Operations REGISTER Operations 7 WRITE VOLATILE CONFIGURATION REGISTER 81h N/A READ ENHANCED VOLATILE CONFIGURATION REGISTER 65h N/A WRITE ENHANCED VOLATILE CONFIGURATION REGISTER 61h N/A READ EXTENDED ADDRESS REGISTER C8h N/A 5 WRITE EXTENDED ADDRESS REGISTER C5h N/A 5 PAGE PROGRAM 02h 02h QUAD INPUT FAST PROGRAM 32h N/A QUAD INPUT/OUTPUT FAST PROGRAM 12h N/A OTP PROGRAM 42h N/A DUAL INPUT FAST PROGRAM A2h N/A DUAL INPUT/OUTPUT FAST PROGRAM D2h N/A BULK ERASE C7h 60h or C7h SECTOR ERASE – 64KB D8h D8h SUB-SECTOR ERASE – 4KB 20h 20h PROGRAM/ERASE SUSPEND 75h N/A PROGRAM/ERASE RESUME 7Ah N/A READ OTP ARRAY 4Bh N/A PROGRAM OTP ARRAY 42h N/A PROGRAM Operations ERASE Operations ONE-TIME PROGRAMMABLE (OTP) Operations DEEP POWER-DOWN PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Commands Table 4: Command Set (Continued) Command Code N25Q Command Code EN25Q Notes DEEP POWER-DOWN B9h B9h 8 RELEASE FROM DEEP POWER-DOWN ABh ABh Command Notes: 1. EON RESET ENABLE QUAD PERIPHERAL INTERFACE (EQPI) protocol. 2. The EN25Q device uses the same command (STD and MULTIPLY I/O) to read information for ID identification. 3. The EN25Q device does not support DTR mode. 4. The N25Q device features dedicated opcodes working in 4-byte address mode regardless of the current addressing mode (3, 4 bytes). 5. For the N25Q device, access to the upper and lower 128Mb segments is done by extended address register setting. Access to these segments in the EN25Q device is done by a command. 6. For the N25Q device, set this protocol by volatile register (VECR bity 7) or nonvolatile register (NVCR bit 3). 7. For the EN25Q device, this register contains multifunctional information (see the EN25Q data sheet for more information). 8. The DEEP POWER DOWN operation is available in N25Q 1.8V devices only. Table 5: Different Commands Sharing Same Command Code Command N25Q 256Mb Command EN25Q 256Mb Command ABh RELEASE FROM DEEP POWER-DOWN RELEASE FROM DEEP POWER-DOWN and READ ELECTRONIC SIGATURE PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Commands READ Commands The READ/FAST READ command set for the N25Q and EN25Q devices is identical. However, the EN25Q device does not have the QUAD OUTPUT FAST READ command. Execute-in-Place (XIP) The N25Q device enters and exits XIP via volatile and nonvolatile configuration register settings. The nonvolatile configuration register sets XIP mode at power-on of the device. Once enabled, XIP management in the N25Q matches that of the EON XIP usage mode. EON uses two confirmation nibbles to enter or exit XIP mode. The solution is fully compatible with the N25Q XIP methodology; other bits are don't care. The table below compares XIP read configuration at power-on for both devices. Table 6: XIP Mode at Power-On Read Configuration N25Q EN25Q FAST READ Yes N/A DUAL OUTPUT FAST READ Yes N/A DUAL I/O FAST READ Yes N/A QUAD OUTPUT FAST READ Yes N/A QUAD I/O FAST READ Yes Yes Figure 1: XIP Timing Configuration Confirmation bits B7–B0 S# Mode 3 C 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Mode 0 I/O switches from Input to Output DQ0 20 16 12 8 4 0 4 0 4 0 4 0 4 DQ1 21 17 13 9 5 1 5 1 5 1 5 1 5 DQ2 22 18 14 10 6 2 6 2 6 2 6 2 6 DQ3 23 19 15 11 7 3 7 3 7 3 7 3 7 Dummy Dummy PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 6 Byte 1 Byte 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Commands Table 7: XIP Confirmation Bit Software Commands XIP Confirmation Bit N25Q EN25Q Enter/confirm XIP mode B4 = 0 (B7–B5 and B3–B0 = "Don't Care") B7 ≠ B3 and B6 ≠ B2 and B5 ≠ B1 and B4 ≠ B0 Exit XIP mode B4 = 1 (B7–B5 and B3–B0 = "Don't Care") B7 = B3 or B6 = B2 or B5 = B1 or B4 = B0 PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Reset Algorithm Reset Algorithm The N25Q device can be reset using the following procedure, which must be completed in the order described: Reset XIP and Reset Dual SPI. (This procedure is necessary because when power loss occurs, the device may start in an undertermined state [XIP or an unnecessary protocol].) During the entire sequence, tSHSL2 must be at least 50ns. Reset XIP Below is the RESET sequence for all possible XIP configurations (QUAD I/O, DUAL I/O, and FAST READ). Figure 2: Reset XIP 0 6 7 8 16 17 18 30 31 32 48 49 50 74 75 76 108 109 C S# DQ0 DQ3 Reset Dual SPI Exit from DUAL or QUAD SPI protocol using the following FFh sequence. Figure 3: Reset DUAL SPI 0 1 2 3 4 5 6 7 8 C S# DQ0 DQ3 PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Electrical Characteristics Electrical Characteristics Table 8: DC Current Characteristics N25Q Parameter EN25Q Symbol Min Max Min Max Unit Standby current ICC1 – 100 – 20 µA Operating current (FAST READ QUAD I/O) ICC3 – 20 – 20 mA Operating current (PAGE PROGRAM) ICC4 – 20 – 28 mA Operating current (WRITE STATUS REGISTER) ICC5 – 20 – 18 mA Operating current (ERASE) ICC6 – 20 – 25 mA Table 9: DC Voltage Specifications N25Q Parameter EN25Q Symbol Min Max Min Max Unit Input low voltage ViL -0.5 0.3 VCC -0.5 0.2 VCC V Input high voltage ViH 0.7 VCC VCC + 0.4 0.7 VCC VCC +0.4 V Output low voltage VOL – 0.4 – 0.4 V Output high voltage VOH VCC -0.2 – VCC -0.2 – V PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device AC Characteristics AC Characteristics Table 10: AC Specifications AC specifications compare the fastest versions available at the full voltage range (2.7-3.6V). N25Q Alternate Parameter EN25Q Symbol Symbol Min Max Min Max Unit Clock frequency (x1 FAST READ) fC fC – 108 – 80 MHz Clock frequency (x2, x4 FAST READ) fC fC – 108 – 80 MHz Clock frequency (READ) fR fR – 54 – 50 MHz S# active setup time tSLCH tCSS 4 – 5 – ns Data-in setup time tDVCH tDSU 2 – 2 – ns Data-in hold time tCHDX tDH 3 – 5 – ns S# deselect time after correct READ (ARRAY READ to ARRAY READ) tSHSL tCSH 50 – 50 – ns Output disable time (2.7–3.6V) tSZQZ tDIS – 8 – 6 ns Clock low to output valid (30pF) tCLQV tV – 7 – 10 ns Output hold time tCLQX tHO 1 - 0 – ns HOLD to output Low-Z tHHQZ tLZ – 8 – 6 ns HOLD to output High-Z tHLQZ tHZ – 8 – 6 ns PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Program and Erase Specifications Program and Erase Specifications Table 11: Program and Erase Specifications N25Q Operation Typ EN25Q Max Typ Max Unit PAGE PROGRAM (256 bytes) 0.5 5 0.8 5 ms 4KB SUBSECTOR ERASE 0.3 1.5 0.05 0.3 s 64KB SECTOR ERASE 0.7 3 0.4 2 s BULK ERASE 240 480 100 280 s Configuration and Memory Map Table 12: Sectors and Subsectors Address Range Sector Subsector Start End 511 8191 01FF F000h 01FF FFFFh : : : 8176 01FF 0000h 01FF 0FFFh : : : : 255 4095 00FF F000h 00FF FFFFh : : : 4080 00FF 0000h 00FF 0FFFh : : : : 127 2047 007F 0000h 007F 0FFFh : : : 2032 007F 0000h 007F 0FFFh : : : : 63 1023 003F F000h 003F FFFh : : : 1008 003F 0000h 003F 0FFFh : : : : 0 15 0000 F000h 0000 FFFFh : : : 0 0000 0000h 0000 0FFFh PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Device Identification Device Identification Manufacturer identification is assigned by JEDEC. As a result, the N25Q and EN25Q devices have a different manufacturer ID, memory type code, and method for reading information. N25Q has a unique ID (UID) composed of 17 read-only bytes, which contain the following data: • The first byte is set to 10h. • The next two bytes of extended device ID specify device configuration (top, bottom, or uniform architecture and hold or reset functionality). • The next 14 bytes contain optional customized factory data. The customized factory data bytes are factory programmed. Refer to the N25Q 256Mb data sheet for more information. For the EN25Q device, you can access information using one of the following codes: ABh, 90h, or 9Fh. Code 9Fh provides complete information. Table 13: Read Identification Summary Parameter N25Q Code EN25Q Code Manufacturer ID 20h 12h Memory type BAh 70h Memory capacity 19h 19h Conclusion Comparing features of the Micron N25Q 256Mb and EN25Q Flash memory devices enables users to migrate applications from the EN25Q to the N25Q 256Mb device. PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-12-23: Migrating to Micron's N25Q 256Mb Flash Device Revision History Revision History Rev. A – 8/12 • Initial release 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef84e3f26e tn1223_N25Q_256_migration.pdf - Rev. A 8/12 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved.