RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). (8) Each lead has same dimensions zPackaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Chanel temperature Range of Storage temperature zEquivalent circuit Symbol Limits VDSS 45 VGSS 20 ID ±9.5 IDP *1 ±38 IS 1.6 ISP 38 *1 PD 2 *2 Tch 150 Tstg -55 to +150 Unit V V A A A A W (8) (7) (6) (5) (8) (7) (6) ∗2 (1) ∗1 (2) (3) o C o C (5) ∗1 ESD Protection Diode. ∗2 Body Diode. (1) (2) (3) (4) (4) (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. *1 PW≤10µｓ、Duty cycle≤1% *2 Mounted on a ceramic board zThermal resistance Parameter Chanel to ambient Symbol Rth(ch-a) * Limits 62.5 Unit o C/W * Mounted on a ceramic board 1/4 RSS095N05 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 45 − 1.0 − − − 10.0 − − − − − − − − − − Typ. − − − − 11 14 15 − 1830 410 210 20 35 78 31 18.9 4.9 7.2 Max. 10 − 1 2.5 16 20 21 − − − − − − − − 26.5 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 9.5A, VGS= 10V ID= 9.5A, VGS= 4.5V ID= 9.5A, VGS= 4V VDS= 10V, ID= 9.5A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 5.0A VGS= 10V RL=5Ω RG=10Ω VDD 25V VGS= 5V ID= 9.5A RL=2.6Ω RG=10Ω ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.2 Unit V Conditions IS= 9.5A, VGS=0V ∗Pulsed 2/4 RSS095N05 Transistor zElectrical characteristic curves 10 100 0.1 1.0 1.5 pulsed Ta=125oC 75oC 25oC -25oC 2.0 2.5 3.0 10 10 0.1 1 0.01 10 VGS=0V pulsed 80 o Ta=125 C 70 60 50 40 ID=9.5A 30 0 10 3 6 9 12 15 10000 Ciss Switching Time : t [ns] k Coss Crss 100 RG=10Ω Pulsed td(on) tr 10 100 1.2 Ta=25oC VDD=25V ID=9.5A 9 8 RG=10Ω Pulsed 7 6 5 4 3 2 1 0 1 10 0.9 10 td(off) 10 0.6 Fig.6 Source-Current vs. Source-Drain Voltage Ta=25oC VDD=25V VGS=10V tf 1000 1000 1 0.3 Source-Drain Voltage : VSD [V] Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 0.1 0.01 0.0 Gate-Source Voltage : VGS [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Ta=25oC f=1MHz VGS=0V 0.1 Gate-Source Voltage : VGS [V] Drain Current : ID [A] 100 25oC -25oC ID=5.0A 0 1 75oC 1 20 10 0.1 10 10 Source Current : Is [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] 10 1 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) Ta=25oC pulsed 90 Ta=125 C 75oC 25oC -25oC 1 0.01 0.1 Drain Current : ID [A] 100 o 100 25oC -25oC 100 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) 1000 Static Drain-Source On-State Resistance RDS(on) [mΩ] 75oC Drain Current : ID [A] Fig.1 Typical Transfer Characteristics VGS=4V pulsed Ta=125oC 1 1 0.01 3.5 Gate-Source Voltage : VGS [V] Capacitance : C [pF] Static Drain-Source On-State Resistance RDS(on) [mΩ] 1 Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Currnt : ID [A] VGS=4.5V VGS=10V pulsed Ta=125oC 75oC 25oC -25oC 0.01 0.5 1000 1000 VDS=10V pulsed 0.01 0.1 1 Drain Current : ID [A] 10 0 5 10 15 20 25 30 35 Total Gate Charge : Qg [nC] Drain-Source Voltage : VDS [V] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RSS095N05 Transistor zMeasurement circuits Pulse Width VGS ID VDS RL 90% 50% 10% VGS VDS 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.10 Switching Time Test Circuit 90% td(off) tr tr toff Fig.11 Switching Time Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1