High transition frequency (dual transistors) EMX5 / UMX5N / IMX5 Dimensions (Unit : mm) Features 1) Two 2SC3838K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=3.2GHz) 3) Low output capacitance. (Cob=0.9pF) EMX6 Inner circuits EMX5 / UMX5N (3) (2) IMX5 (1) (4) Tr2 (5) (6) Tr2 ROHM : EMT6 Tr1 Each lead has same dimensions Tr1 (4) (5) (6) (3) (2) UMX5N (1) Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 3 V IC 50 mA Collector current Collector power dissipation EMX5 / UMX5N 150(TOTAL) Pc IMX5 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 ROHM : UMT6 EIAJ : SC-88 ∗2 Each lead has same dimensions IMX5 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Package, marking, and packaging specifications Type EMX5 UMX5N IMX5 Package EMT6 UMT6 SMT6 Marking Code X5 T2R X5 TR T108 Basic ordering unit (pieces) 8000 3000 3000 X5 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/2 2010.09 - Rev.C EMX5 / UMX5N / IMX5 Data Sheet Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 20 − − V IC=10μA Collector-emitter breakdown voltage BVCEO 11 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 3 − − − − 0.5 V μA IE=10μA VCB=10V Emitter cutoff current IEBO − − 0.5 μA DC current transfer ratio hFE 56 − 120 − VCE(sat) − − 0.5 V Transition frequency fT 3.2 − GHz Output capacitance Cob 1.4 − 0.9 1.55 pF Collector-emitter saturation voltage Conditions VEB=2V VCE/IC=10V/5mA IC/IB=10mA/5mA VCE/IE=10V/−10mA, f=500MHz ∗ VCB/f=10V/1MHz, IE=0A ∗Transition frequency of the device. 200 100 50 20 0.5 1 5 2 10 20 50 200 100 50 Ic/IB=10 20 Ic/IB=2 10 0.1 0.2 COLLECTOR CURRENT : IC (mA) 2.0 Cob Cre 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 1 2 5 10 20 2.0 1.0 0.5 0.2 0.1 −0.1 −0.2 50 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Capacitance vs. reverse bias voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 50 −0.5 −1 −2 −5 −10 −20 −50 EMITTER CURRENT : IE (mA) Fig.2 Collector-emitter saturation voltage vs. collector current COLLECTOR TO BASE TIME CONSTANT : Cc rbb'(ps) OUTPUT CAPACITANCE : Cob (pF) FEEDBACK CAPACITANCE : Cre (pF) Ta=25°C f=1MHz IE=0A 1.0 0.5 Ta=25°C VCE=10V COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current 5.0 Ta=25°C Fig.3 Gain bandwidth product vs. emitter current Ta=25°C VCE=6V f=500MHz Ta=25°C VCE=10V f=31.8MHz NOISE FIGURE : NF (dB) 10 0.1 0.2 5.0 500 TRANSITION FREQUENCY : fT (GHz) Ta=25°C VCE=10V 500 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) DC CURRENT TRANSFER RATIO : hFE Electrical characteristics curves 20 10 5.0 20 10 2.0 1.0 0.1 0.2 0 0.1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.6 Noise factor vs. collector current characteristics Fig.5 Collector to base time constant vs. collector current characteristics 2/2 2010.09 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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