Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor C0.5 0.9 5.5+0.3 −0.1 1.5±0.3 2SD1758 1.0 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1182 / 2SB1240 0.65Max. 2.3±0.2 0.55±0.1 1.0±0.2 2.3±0.2 0.5±0.1 (1) (1) (2) (3) (2) 14.5±0.5 0.9 (3) 2.54 2.54 1.05 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Parameter VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC Collector power dissipation PC 2SD1758 2SD1862 2 A (DC) 2.5 A (Pulse) ∗1 10 1 W (TC=25°C) ∗2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=20ms ∗2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager. Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 40 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA Emitter-base breakdown voltage Parameter Unit Conditions BVEBO 5 − − V IE=50μA Collector cutoff current ICBO − − 1 μA VCB=20V Emitter cutoff current IEBO − − 1 μA VEB=4V DC current transfer ratio hFE 120 − 390 − VCE=3V, IC=0.5A ∗ VCE(sat) − 0.5 0.8 V IC/IB=2A/0.2A ∗ Transition frequency fT − 100 − MHz VCE=5V, IE=−50mA, f=100MHz ∗ Output capacitance Cob − 30 − pF Collector-emitter saturation voltage VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/2 2010.04 - Rev.C 2SD1758 / 2SD1862 Data Sheet Packaging specifications and hFE Package Taping Code Type hFE 2SD1758 QR 2SD1862 QR Basic ordering unit (pieces) TL TV2 2500 2500 − − hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves 200 100 50 20 10 5 500 2.4mA 0.4 2.1mA 1.8mA 0.3 1.5mA 1.2mA 0.2 0.9mA 0.6mA 0.1 200 VCE=3V 1V 100 50 0.3mA 2 IB=0A 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 IC/IB=50 50 20 20 5 10 10 20 BASE SATURATION VOLTAGE : VBE(sat) (V) 200 20 2.0 IC/IB=10 0.5 0.2 0.1 10 20 50 100 200 Fig.6 Transition frequency vs. emitter current 3 Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR CURRENT : IC (A) 2 1 PW=100ms∗ 0.5 0.2 0.1 0.05 TC=25°C ∗Single 0.02 nonrepetitive pulse 0.01 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SD1758) 2/2 1 Ic Max Ic Max Pulse 0.5 s 20 2 s 10 −50 −100−200 −500 −1A m 5 −5 −10 −20 0m 2 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) -2 =1 20 1 50 PW Cob 0.5 100 DC 100 50 200 00 =1 PW Cib Ta=25°C VCE=5V EMITTER CURRENT : IE (mA) Fig.5 Collector-emitter saturation voltage vs. collector current 200 500 1A 2A 500 20 −1 500 1A 2A 5 500 50 100 200 1000 Ta=25°C 5 1000 10 20 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Ta=25°C f=1MHz IE=0A IC=0A 5 Fig.3 DC current gain vs. collector current 1 50 100 200 500 1A 2A Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1.6 2 COLLECTOR CURRENT : IC (mA) 10 1.2 Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics 500 0.8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Ta=25°C 0.4 TRANSITION FREQUENCY : fT (MHz) 1 0 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta=25°C 2.7mA DC CURRENT GAIN : hFE 500 Ta=25°C 3.0mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 1000 0.5 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=3V 2000 0.2 0.1 0.05 Ta=25°C Single nonrepetitive pulse 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SD1862) 2010.04 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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