NPN small signal transistor BCX19 Dimensions (Unit : mm) Features (1) High gain and low saturation voltage. (2) Complements the BCX17. 2.9 0.4 (3) Package 1.3 2.4 Packaging specifications Type 0.95 0.45 0.2Min. BCX19 Taping Code T116 Basic ordering unit (pieces) 3000 (2) (1) 0.95 0.95 0.15 1.9 (1)Emitter BCX19 (2)Base Each lead has same dimensions (3)Collector Abbreviated symbol : GU1 Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-emitter voltage (VBE=0) VCES 50 V Collector-emitter voltage (open base) VCEO 45 V Emitter-base voltage Parameter VEBO 5 V Collector current IC 0.5 A Collector current (peak value) ICM 1 A 0.2 W Collector power dissipation PC 0.35 W ∗ 0.425 W ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −65 to 150 °C ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE ∗2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCES 50 − − V IC= 50μA Collector-emitter breakdown voltage BVCEO 45 − − V IC= 10mA BVEBO 5 − − V IE= 50μA Collector-base cutoff current ICBO − − 0.1 μA VCB= 20V Emitter-base cutoff current IEBO − − 10 μA VEB= 5V Parameter Emitter-base breakdown voltage Symbol Conditions Collector-emitter saturation voltage VCE(sat) − − 0.62 V IC/IB= 500mA/ 50mA Base-emitter voltage VBE(on) − − 1.2 V VCE= 1V, IC= 500mA 100 − 600 DC current transfer ratio Transition frequency Collector-base cutoff current VCE= 1V, IC= 100mA 70 − − 40 − − fT − 250 − MHz ICBO − − 5 μA hFE www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ − VCE= 1V, IC= 300mA VCE= 1V, IC= 500mA 1/2 VCE= 5V, IE= 20mA, f=100MHz VCB= 20V, Ta=150°C 2011.09 - Rev.B Data Sheet BCX19 Absolute maximum ratings (Ta=25C) IB =500uA IB =450uA 1000 VCE=1V Ta=125ºC 75ºC 25ºC -55ºC 10 IB =300uA 80 IB =250uA 60 IB =200uA IB =150uA 40 IB =100uA 20 100 VCE=5V 3V 1V IB =50uA IB =0A 1 0 0.2 0.4 0.6 0.8 1 1.2 BASE TO EMITTER VOLTAGE : VBE (V) 0.4 100 Ta=125ºC 75ºC 25ºC -55ºC 10 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(s at) (V) VCE=1V 100 1.6 10 Ta=25ºC IC /IB=50/1 20/1 10/1 0.1 0.01 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig3. DC Current Gain vs. Collector Current (I) 100 1000 1 IC /IB=10/1 Ta=125ºC 75ºC 25ºC -55ºC 0.1 0.01 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig5. Collector Saturation Voltage vs. Collector Current (I) Ta=25 C f=1MHz IE=0A 50 1 2 1 Fig4. DC Current Gain vs. Collector Current (II) 20 Cob 5 COLLECTOR CURRENT : IC (mA) Fig6. Collector Saturation Voltage vs. Collector Current (II) Ta=25 C VCE=6V 500 TRANSITION FREQUENCY : fT (MHZ) Cib 10 1.2 Fig2. Grounded Emitter Output Characteristics 1000 10 0.8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig1. Grounded Emitter Propagation Characteristics 1 10 Ta=25ºC 0 COLLECTOR SATURATION VOLTAGE : VCE(s at) (V) 0 DC CURRENT GAIN : hFE Ta=25ºC IB =350uA DC CURRENT GAIN : hFE 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) IB =400uA 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1000 200 100 0.1 0.2 0.5 1 2 5 10 20 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.7 Input-and-output capacity vs.voltage characteristic Fig.8 Transition frequency vs.emitter current www.rohm.com c 2011 ROHM Co., Ltd. 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