ROHM 2SC4774_09

High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
Dimensions (Unit : mm)
Features
1) Very low output-on resistance (Ron).
2) Low capacitance.
2SC4774
2.0
0.9
0.7
0.2
0.3
(3)
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
VCEO
12
6
VEBO
IC
3
50
V
V
V
mA
PC
0.2
W
Tj
Tstg
150
−55 to +150
°C
°C
2.1
(1)
(2)
0.1Min.
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
1.25
Absolute maximum ratings (Ta=25C)
0.65 0.65
0.15
1.3
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
2SC4713K
Packaging specifications and hFE
2.9
2SC4713K
Package
hFE
UMT3
S
SMT3
S
Marking
Code
Basic ordering unit (pieces)
BM∗
T106
3000
BM∗
T146
3000
∗Denotes h
1.1
0.4
0.8
(3)
(2)
(1)
0.95 0.95
0.15
FE
1.9
0.3Min.
2SC4774
1.6
2.8
Type
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Parameter
BVCBO
BVCEO
12
6
IC=10μA
IC=1mA
BVEBO
3
−
−
−
V
V
Emitter-base breakdown voltage
V
IE=10μA
ICBO
−
−
−
−
−
0.5
μA
IEBO
−
0.5
VCB=10V
VEB=2V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
VCE(sat)
−
−
−
0.3
μA
V
DC current transfer ratio
hFE
560
−
Transition frequency
fT
−
800
1
−
1.7
MHz
pF
2
−
Ω
Output capacitance
Cob
180
300
−
Output-on resistance
Ron
−
Conditions
IC/IB=10mA/1mA
VCE/IC=5V/5mA
VCE=5V, IE= −10mA, f=200MHz
VCB=10V, IE=0A, f=1MHz
IB=3mA, VI=100mVrms, f=500kHz
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.12 - Rev.C
2SC4774 / 2SC4713K
Data Sheet
Electrical characteristic curves
8
25mA
20mA
6
15mA
4
10mA
5mA
2
0
0
1
2
30
0.1mA
20
10
IB=0μA
4
5
3
0.2mA
0
0
0.1
0.2
IB=0mA
0.4
0.5
0.3
−25°C
VCE=5V
40
30
20
10
0
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output
Fig.2 Grounded emitter output
Fig.3 Grounded emitter propagation
characteristics (
COLLECTER SATURATION VOLTAGE : VCE(sat) (mA)
characteristics ( )
Ta=25°C
VCE=5V
2000
500
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10 20
50
GAIN BANDWIDTH PRODUCT : fT (MHz)
DC CURRENT TRANSFER RATIO : hFE
characteristics
)
1000
1000
Ta=25°C
IC/IB=10
500
200
100
50
20
10
5
0.1 0.2
0.5
1
2
5
10 20
500
200
100
50
20
0.1 0.2
50
0.5
1
2
5
10 20
50
COLLECTOR CURRENT : IC (mA)
Fig.6 Gain bandwidth product vs.
Fig.5 Collector-emitter saturation
Fig.4 DC current gain vs. collector current
Ta=25°C
VCE=5V
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
collector current
voltage vs. collector current
20
50
Ta=25°C
f=1MHz
5
2
1
0.5
0.2
0.1 0.2
0.5
1
2
5
10 20
Ta=25°C
f=500kHz
υi=100mVrms
RL=1kΩ
50
Ta=25°C
f=1MHz
10
ON RESISTANE : Ron (Ω)
10
20
OUTPUT CAPACITANCE : Cob (pF)
FEEDBACK CAPACITIANCE : Cre (pF)
25°C
125°C
A
40
50
0.3mA
1.0
m
30mA
mA
A
0.5 0.4m
Ta=25°C
COLLECTOR CURRENT : IC (mA)
50
35mA
Ta=25°C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
10
5
2
1
0.5
20
10
5
2
0.2
0.1 0.2
1
0.1 0.2
0.5
1
2
5
10 20
0.5
1
2
5
10
20
50
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASS CURRENT : IB (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Fig.8 Back capacitance voltage
2/2
Fig.9 Output-on resistance vs.
base current
2009.12 - Rev.C
Notice
Notes
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