General purpose transistors(dual transistors) EMT18 / UMT18N / IMT18 Dimensions (Unit : mm) Features 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. EMT18 Each lead has same dimensions ROHM : EMT6 Structure Epitaxial planar type PNP silicon transistor Abbreviated symbol : T18 UMT18N The following characteristics apply to both Tr1 and Tr2. Each lead has same dimensions Inner circuit EMT18 / UMT18N (3) (2) (1) ROHM : UMT6 EIAJ : SC-88 IMT18 (4) (5) Tr1 Tr2 (4) Abbreviated symbol : T18 IMT18 (6) Tr1 Tr2 (5) (6) (3) (2) (1) Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 Abbreviated symbol : T18 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol Limits VCBO −15 VCEO −12 VEBO −6 IC −500 ∗1 ICP 1.0 EMT6 ∗2 150 (TOTAL) PC UMT6 SMT6 300 (TOTAL)∗3 Tj 150 Tstg −55 to +150 Unit V V V mA A mW °C °C ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. ∗3 200mW per element must not be exceeded. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/3 2010.08 - Rev.C EMT18 / UMT18N / IMT18 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions − − V IC= −10μA Collector-base breakdown voltage BVCBO −15 Collector-emitter breakdown voltage BVCEO −12 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −10μA Collector cutoff current ICBO − − −0.1 μA VCB= −15V Emitter cutoff current IEBO − − −0.1 μA VCB= −6V Collector-emitter saturation voltage VCE (sat) − −100 −250 mV IC / IB= −200mA / −10mA VCE= −2V, IC= −10mA DC current transfer ratio hFE 270 − 680 − Transition frequency fT − 260 − MHz VCE= −2V, IE=10mA, f=100MHz Output capacitance Cob − 6.5 − pF VCB= −10V, IE=0A, f=1MHz Packaging specifications and hFE Package name Code Basic ordering unit (pieces) Type T2R 8000 EMT18 UMT18N IMT18 − − Taping TR 3000 − T110 3000 − − − Electrical characteristic curves 1000 VCE=2V VCE=2V 1000 500 200 Ta=125∞C Ta=25∞C Ta= −40∞C 100 50 20 10 5 200 50 20 10 5 2 1 1 0 0.5 1.0 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded Emitter Propagation Characteristics www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ Ta=125∞C Ta=25∞C Ta= −40∞C 100 2 IC / IB=20 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 500 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 1000 200 100 Ta=125°C Ta=25°C Ta= −40°C 50 20 10 5 2 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.2 DC Current Gain vs. Collector Current 2/3 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 2010.08 - Rev.C Ta=25∞C COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 500 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 1000 10000 IC / IB=20 5000 Ta= −40°C Ta=25°C Ta=125°C 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current 1000 TRANSITION FREQUENCY : fT (MHz) 1000 Data Sheet BASER SATURATION VOLTAGE : VBE (sat) (mV) EMT18 / UMT18N / IMT18 VCE=2V Ta=25∞C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IC (mA) Fig.6 Gain Bandwidth Product vs. Emitter Current IE=0A f=1MHz Ta=25∞C 500 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage www.rohm.com c 2010 ROHM Co., Ltd. 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