SZ5-M1-WX-XX – High-Power LED Superior Efficacy and Lumen output with Small Form Factor Z Power LED – Z5-M1 SZ5-M1-WX-XX (Cool, Neutral, Warm) MacAdam 3-Step RoHS Product Brief Description Features and Benefits • The Z-Power series is designed for high flux output applications with high current operation capability. • It incorporates state of the art SMD design and low thermal resistant material. • • • • • • • • The Z Power LED is ideal light sources for directional lighting applications such as Spot Lights, various outdoor applications, automotive lightings and high performance torches . High Lumen Output and Efficacy Designed for high current operation Low Thermal Resistance Wide CCT range 2,600~7,000K High Color Quality, CRI Min. 80 ANSI compliant Binning MacAdam 3 Step for Warm White Key Applications • • • • • • • Indoor lighting Outdoor lighting Automotive Architectural lighting Industrial lighting (High/Low bay) Portable Torch Home appliance Table 1. Product Selection Table CCT CRI Part Number Rev3.1 Color Min. Typ. Max. Min SZ5-M1-W0-00 Cool White 4700K 5300K 7000K 70 SZ5-M1-WN-00 Neutral White 3700K 4000K 4700K 70 SZ5-M1-WN-C8 Neutral White 3700K 4000K 4700K 80 SZ5-M1-WW-00 Warm White 2600K 3000K 3200K 68 SZ5-M1-WW-C8 Warm White 2600K 3000K 3700K 80 SZ5-M1-WW-C9 Warm White 2600K 3000K 3200K 90 1 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Table of Contents Index • Product Brief 1 Table of Contents 2 • Product Performance 3 • Characteristics Graph 5 • Color Bin Structure 10 • Mechanical Dimensions 15 • Packaging Information 16 • Product Nomenclature 17 • Recommended Solder Pad 18 • Reflow Soldering Characteristics 19 • Handling of Silicone Resin for LEDs 20 • Precaution For Use 21 • Company Information 24 Rev3.1 2 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Performance Characteristics Table 2. Product Selection, Tj=25ºC, RH30% Typical Luminous Flux [2] ФV [3] (lm) CCT (K) [1] Part Number CRI [5], Ra Typical Forward Voltage (VF) [4] Typ. 350mA 700mA 1200mA 350mA 700mA 1200mA Min. SZ5-M1-W0-00 5300 158 285 433 2.95 3.14 3.33 70 SZ5-M1-WN-00 4000 156 276 415 2.95 3.14 3.33 70 SZ5-M1-WN-C8 4000 142 253 382 2.95 3.14 3.33 80 SZ5-M1-WW-00 3000 148 265 403 2.95 3.14 3.33 68 SZ5-M1-WW-C8 3000 128 231 353 2.95 3.14 3.33 80 SZ5-M1-WW-C9 3000 105 188 286 2.95 3.14 3.33 90 Table 3. Product Selection, Tj=85ºC Typical Luminous Flux [2] ФV [3] (lm) CCT (K) Part Number [1] Typical Forward Voltage (VF) [4] Typ. 350mA 700mA 1200mA 350mA 700mA 1200mA SZ5-M1-W0-00 5300 142 258 393 2.78 2.96 3.14 SZ5-M1-WN-00 4000 137 250 380 2.78 2.96 3.14 SZ5-M1-WN-C8 4000 126 229 349 2.78 2.96 3.14 SZ5-M1-WW-00 3000 141 239 364 2.78 2.96 3.14 SZ5-M1-WW-C8 3000 117 210 322 2.78 2.96 3.14 SZ5-M1-WW-C9 3000 95 153 232 2.78 2.96 3.14 Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements. (3) ФV is the total luminous flux output as measured with an integrating sphere. (4) Tolerance is 0.06V on forward voltage measurements. (5) Tolerance is 2.0 on CRI measurements. Rev3.1 3 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Performance Characteristics Table 4. Absolute Maximum Ratings, Tj=25ºC Value Parameter Symbol Unit Min. Typ. Max. IF - - 1,500 mA IF - - 2,000 mA Reverse Voltage VR - - 5 V Power Dissipation Pd - - 5.22 W Junction Temperature Tj - - 150 ºC Operating Temperature Topr - 40 - 125 ºC Storage Temperature Tstg - 40 - 125 ºC Viewing angle θ Forward Current [1] Peak Pulsed Forward Current [2] Thermal resistance (J to S) [3] ESD Sensitivity(HBM) 118 RθJ-S - [4] degree 4.5 - K/W Class 3A JESD22-A114-E Notes : (1) At Junction Temperature 25℃ condition. (2) Pulse width ≤10ms, duty cycle ≤ 10% condition. (3) RθJ-S is tested at 350mA. (4) The zener diode is included to protect the product from ESD. Rev3.1 4 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Characteristics Graph Fig 1. Color Spectrum, Tj=25ºC Relative Radiant Power [%] 1.25 Cool CRI70 Neutral CRI80 Neutral CRI70 Warm CRI80 Warm CRI68 Warm CRI90 1.00 0.75 0.50 0.25 0.00 350 400 450 500 550 600 650 700 750 800 Wavelength [nm] Fig 2. Typical Spatial Distribution 100 Relative Luminous Intensity [%] 90 80 70 60 50 40 30 20 10 0 -80 -60 -40 -20 0 20 40 60 80 Angular Displacement [degrees] Rev3.1 5 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, Tj=25℃ 1.6 1600 Forward [A] Current [mA] Forward Current 1.4 1400 1200 1.2 1.0 1000 0.8 800 0.6 600 0.4 400 0.2 200 0.0 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 Forward Voltage [V] Fig 4. Forward Current vs. Relative Luminous Flux, T j=25℃ 400 Relative Luminous Flux [%] 350 300 250 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 1600 Forward Current [mA] Rev3.1 6 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Characteristics Graph Fig 5. Forward Current vs. CIE x, y Shift, Tj=25℃ 0.02 ΔCIE CIE(X) x y ΔCIE CIE(Y) 0.01 0.00 -0.01 -0.02 0 200 400 600 800 1000 1200 1400 Forward Current [mA] Fig 6. Junction Temp. vs. CIE x, y Shift, IF=350mA 0.02 x ΔCIE CIE(X) y ΔCIE CIE(Y) 0.01 0.00 -0.01 -0.02 25 50 75 100 125 150 o Junction Temperature [ C] Rev3.1 7 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Characteristics Graph Fig 7. Relative Light Output vs. Junction Temperature, IF=350mA 120 Relative luminous flux [%] 100 80 60 40 20 0 25 50 75 100 125 150 o Junction Temperature [ C] Fig 8. Relative Forward vs. Junction Temperature, IF=350mA 0.05 0.00 -0.05 VF -0.10 -0.15 -0.20 -0.25 -0.30 40 60 80 100 120 140 160 o Junction Temperature [ C] Rev3.1 8 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Characteristics Graph Fig 9. Maximum Forward Current vs. Ambient Temperature, Tj(max.)=150℃, IF =1,500mA 1.6 1600 Rth(j-a)=15℃/W Rth(j-a)=20℃/W Rth(j-a)=25℃/W 1200 1.2 Maximum Current [A] Maximum Current [mA] 1400 1.4 1400 1400 1000 1.0 0.8 800 0.6 600 0.4 400 0.2 200 0.0 0 20 40 60 80 100 120 140 o Ambient Temperature [ C] Rev3.1 9 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Color Bin Structure Table 5. Bin Code description, Tj=25℃, IF=350mA Luminous Flux (lm) Color Chromaticity Coordinate Part Number Bin Code Min. Max. V2 130 140 V3 140 150 W1 150 160 W2 160 V2 Bin Code Min. Max. G 2.75 3.00 H 3.00 3.25 170 I 3.25 3.50 130 140 G 2.75 3.00 V3 140 150 H 3.00 3.25 W1 150 160 W2 160 170 I 3.25 3.50 U3 109 118.5 G 2.75 3.00 V1 118.5 130 H 3.00 3.25 V2 130 140 V3 140 150 I 3.25 3.50 V2 130 140 G 2.75 3.00 V3 140 150 H 3.00 3.25 W1 150 160 I 3.25 3.50 G 2.75 3.00 H 3.00 3.25 SZ5-M1-W0-00 Refer to page.13 SZ5-M1-WN-00 Refer to page.14 SZ5-M1-WN-C8 Refer to page.14 SZ5-M1-WW-00 Refer to page.15 U3 109 118.5 V1 118.5 130 V2 130 140 V3 140 150 I 3.25 3.50 U1 91 100 G 2.75 3.00 U2 100 109 H 3.00 3.25 U3 109 118.5 I 3.25 3.50 SZ5-M1-WW-C8 Refer to page.15 SZ5-M1-WW-C9 Rev3.1 Typical Forward Voltage (VF) Refer to page.15 10 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Color Bin Structure Table 6. Flux Bin Code description, Tj=85℃ Luminous Flux (lm) 350mA 700mA Bin Code Min. Max. Min. Max. U1 84 92 152 167 U2 92 100 167 182 U3 100 109 182 198 V1 109 119 193 205 V2 119 129 205 218 V3 129 138 218 240 W1 138 147 240 256 W2 147 156 256 272 Table 7. VF Bin Code description, Tj=85℃ Forward Voltage (VF) 350mA 700mA Bin Code Rev3.1 Min. Max. Min. Max. G 2.60 2.82 2.77 3.02 H 2.82 3.06 3.02 3.27 I 3.06 3.30 3.27 3.52 11 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool white), Tj =25℃, IF=350mA 4700K 0.38 5000K C1 5300K CIE (y) 0.36 C0 5600K B1 C2 B0 B3 C4 B2 B5 6000K 6500K 0.34 7000K A0 A2 0.32 A1 A3 C3 C5 B4 A5 A4 0.30 0.30 0.32 0.34 0.36 CIE (x) A0 CIE x 0.3028 0.3041 0.3126 0.3115 A1 CIE y 0.3304 0.3240 0.3324 0.3393 CIE x 0.3115 0.3126 0.3210 0.3205 CIE y 0.3256 0.3187 0.3261 0.3334 CIE x 0.3207 0.3212 0.3293 0.3292 CIE y 0.3316 0.3243 0.3306 0.3384 CIE x 0.3293 0.3294 0.3366 0.3369 CIE y 0.3601 0.3514 0.3578 0.3669 CIE x 0.3369 0.3366 0.3440 0.3448 A5 CIE x 0.3136 0.3146 0.3221 0.3216 Rev3.1 CIE y 0.3462 0.3389 0.3461 0.3539 CIE x 0.3292 0.3293 0.3373 0.3376 CIE y 0.3384 0.3306 0.3369 0.3451 CIE x 0.3376 0.3373 0.3456 0.3463 CIE y 0.3451 0.3369 0.3428 0.3514 CIE x 0.3448 0.3440 0.3514 0.3526 A3 CIE y 0.3240 0.3177 0.3256 0.3324 CIE x 0.3126 0.3136 0.3216 0.3210 CIE y 0.3539 0.3461 0.3534 0.3616 CIE x 0.3212 0.3217 0.3293 0.3293 CIE y 0.3616 0.3534 0.3601 0.3687 CIE x 0.3463 0.3456 0.3539 0.3552 B1 B5 C3 CIE x 0.3456 0.3448 0.3526 0.3539 CIE x 0.3041 0.3055 0.3136 0.3126 B0 B4 CIE x 0.3217 0.3222 0.3294 0.3293 A2 CIE y 0.3393 0.3324 0.3408 0.3481 CIE x 0.3055 0.3068 0.3146 0.3136 CIE y 0.3389 0.3316 0.3384 0.3461 CIE x 0.3293 0.3293 0.3369 0.3373 CIE y 0.3687 0.3601 0.3669 0.3760 CIE x 0.3373 0.3369 0.3448 0.3456 B2 C0 C4 A4 CIE y 0.3324 0.3256 0.3334 0.3408 CIE y 0.3177 0.3113 0.3187 0.3256 B3 C1 CIE y 0.3461 0.3384 0.3451 0.3534 C2 CIE y 0.3534 0.3451 0.3514 0.3601 C5 CIE y 0.3514 0.3428 0.3487 0.3578 12 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Color Bin Structure CIE Chromaticity Diagram (Neutral white), Tj =25℃, IF=350mA 0.42 3700K 4000K 0.40 E1 CIE (y) 4200K E0 4500K 4700K 0.38 D1 D0 D2 0.36 E2 D3 E3 E5 E4 D5 D4 0.34 0.34 0.36 0.38 0.40 CIE (x) D0 CIE x 0.3548 0.3536 0.3625 0.3641 D1 CIE y 0.3736 0.3646 0.3711 0.3804 CIE x 0.3641 0.3625 0.3714 0.3736 CIE y 0.3616 0.3521 0.3578 0.3677 CIE x 0.3736 0.3714 0.3842 0.3869 CIE y 0.3677 0.3578 0.3646 0.3751 CIE x 0.3813 0.3783 0.3898 0.3934 D5 CIE x 0.3608 0.3590 0.3670 0.3692 Rev3.1 CIE x 0.3536 0.3524 0.3608 0.3625 CIE y 0.3874 0.3775 0.3855 0.3958 CIE x 0.3869 0.3842 0.3970 0.4006 E0 E4 CIE x 0.3692 0.3670 0.3783 0.3813 D2 CIE y 0.3804 0.3711 0.3775 0.3874 D3 CIE y 0.3646 0.3555 0.3616 0.3711 CIE x 0.3625 0.3608 0.3692 0.3714 CIE y 0.3958 0.3855 0.3935 0.4044 CIE x 0.3714 0.3692 0.3813 0.3842 E1 D4 CIE y 0.3711 0.3616 0.3677 0.3775 CIE x 0.3524 0.3512 0.3590 0.3608 CIE y 0.3775 0.3677 0.3751 0.3855 CIE x 0.3842 0.3813 0.3934 0.3970 E2 CIE y 0.3555 0.3465 0.3521 0.3616 E3 CIE y 0.3855 0.3751 0.3825 0.3935 E5 CIE y 0.3751 0.3646 0.3716 0.3825 13 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm white), Tj=25℃, IF=350mA F0 CIE x 0.3996 0.396 0.4104 0.4146 F1 CIE y 0.4015 0.3907 0.3978 0.4089 CIE x 0.4146 0.4104 0.4248 0.4299 CIE y 0.3865 0.3751 0.3814 0.3931 CIE x 0.4299 0.4261 0.4324 0.4365 CIE y 0.4189 0.4100 0.4122 0.4212 CIE x 0.4324 0.4284 0.4345 0.4387 CIE y 0.4122 0.4033 0.4055 0.4145 CIE x 0.4345 0.4302 0.4361 0.4406 CIE y 0.4055 0.3964 0.3985 0.4077 CIE x 0.4361 0.4316 0.4373 0.4420 CIE y 0.3998 0.3906 0.3893 0.3985 CIE x 0.4687 0.4636 0.4575 0.4625 CIE y 0.4304 0.4211 0.4197 0.4289 CIE x 0.4697 0.4644 0.4585 0.4636 CIE y 0.4225 0.4132 0.4118 0.4211 CIE x 0.4703 0.4648 0.4591 0.4644 F5 CIE x 0.4062 0.4017 0.4147 0.4198 Rev3.1 CIE y 0.4033 0.3943 0.3964 0.4055 CIE x 0.4302 0.4259 0.4316 0.4361 CIE y 0.3964 0.3873 0.3893 0.3985 CIE x 0.4625 0.4575 0.4515 0.4562 CIE y 0.4289 0.4197 0.4182 0.4275 CIE x 0.4636 0.4585 0.4526 0.4575 CIE y 0.4211 0.4118 0.4104 0.4197 CIE x 0.4644 0.4591 0.4534 0.4585 CIE y 0.4132 0.4038 0.4025 0.4188 CIE x 0.4648 0.4593 0.4538 0.4591 CIE x 0.4104 0.4062 0.4198 0.4248 CIE y 0.4077 0.3990 0.4011 0.4100 CIE x 0.4223 0.4185 0.4243 0.4284 CIE y 0.4011 0.3922 0.3943 0.4033 CIE x 0.4243 0.4203 0.4259 0.4302 CIE y 0.3943 0.3853 0.3873 0.3964 CIE x 0.4496 0.4451 0.4515 0.4562 CIE y 0.4275 0.4182 0.4168 0.4260 CIE x 0.4575 0.4526 0.4468 0.4515 CIE y 0.4197 0.4104 0.4090 0.4182 CIE x 0.4585 0.4534 0.4477 0.4526 CIE y 0.4118 0.4025 0.4012 0.4104 CIE x 0.4591 0.4538 0.4483 0.4534 CIE x 0.3925 0.3889 0.4017 0.4062 CIE y 0.3990 0.3902 0.3922 0.4011 CIE x 0.4185 0.4147 0.4203 0.4243 CIE y 0.3922 0.3834 0.3853 0.3943 CIE x 0.4430 0.4387 0.4451 0.4496 CIE y 0.4236 0.4145 0.4168 0.4260 CIE x 0.4451 0.4406 0.4468 0.4515 CIE y 0.4182 0.4090 0.4077 0.4168 CIE x 0.4526 0.4477 0.4420 0.4468 CIE y 0.4104 0.4012 0.3998 0.4090 CIE x 0.4534 0.4483 0.4428 0.4477 CIE y 0.4025 0.3932 0.3919 0.4012 CIE x 0.4810 0.4758 0.4697 0.4750 CIE y 0.4145 0.4055 0.4077 0.4168 H13 H23 H33 CIE y 0.4212 0.4122 0.4145 0.4236 G42 H12 H22 CIE y 0.3902 0.3814 0.3834 0.3922 G31 G41 H11 CIE y 0.3798 0.369 0.3751 0.3865 G14 G24 G34 H43 F4 CIE y 0.3978 0.3865 0.3931 0.4048 G13 G23 H32 H42 CIE x 0.4758 0.4703 0.4644 0.4697 CIE x 0.4284 0.4243 0.4302 0.4345 H21 H31 CIE x 0.4750 0.4697 0.4636 0.4687 CIE y 0.4100 0.4011 0.4033 0.4122 F3 CIE y 0.3907 0.3798 0.3865 0.3978 G12 G44 H14 CIE x 0.4477 0.4428 0.4373 0.4420 CIE x 0.4261 0.4223 0.4284 0.4324 G33 G43 CIE x 0.4406 0.4361 0.4420 0.4468 CIE y 0.4165 0.4077 0.4100 0.4189 G22 G32 CIE x 0.4387 0.4345 0.4406 0.4451 CIE x 0.396 0.3925 0.4062 0.4104 G11 G21 CIE x 0.4365 0.4324 0.4387 0.4430 F2 CIE y 0.4089 0.3978 0.4048 0.4165 CIE y 0.4090 0.3998 0.3985 0.4077 H24 H34 CIE y 0.4012 0.3919 0.3906 0.3998 H41 CIE y 0.4319 0.4225 0.4211 0.4304 H44 CIE y 0.4038 0.3944 0.3932 0.4025 14 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Mechanical Dimensions Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.1mm Rev3.1 15 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Emitter Tape & Reel Packaging Rev3.1 16 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Product Nomenclature RANK : QUANTITY : ##### LOT NUMBER : ###### #### ### SSC PART NUMBER : ### ## ## ## Table 8. Part Numbering System : X1X2X3 - X4X5 - X6X7 - X8X9 Part Number Code Description Part Number X1 Company S X2 Z-Power LED series number Z X3 PKG series 5 X4 PKG series M M series X5 Revision number 1 New version X6 X7 Color Specification W0 Pure white WN Neutral white WW Warm white C8 CRI (min.) 80 C9 CRI (min.) 90 00 The others X8 X9 Color Specification Value Table 9. Lot Numbering System : Y1Y1Y2Y3Y3Y4Y5Y5Y5Y5 - Y6Y6Y6 - Y7Y7Y7 - Y8Y8Y8Y8Y8Y8Y8 Lot Number Code Description Y1 Year Y2 Month Y3 Day Y4 Production area Y5 Mass order Y6 Taping number Y7 Reel number Y8 Internal management number Rev3.1 17 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Recommended Solder Pad Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only. (4) Undefined tolerance is ±0.1mm. Rev3.1 18 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Table 10. Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev3.1 19 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this product with acid or sulfur material in sealed space. (7) Avoid leaving fingerprints on silicone resin parts. Rev3.1 20 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend storing Z5 Series LEDs in a dry box with a desiccant . The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMD techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing / Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 1 year (MSL 2) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more after being shipped from Seoul Semiconductor. A sealed container with a nitrogen atmosphere should be used for storage. (11) The appearance and specifications of the product may be modified for improvement without notice. (12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. Rev3.1 21 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Precaution for Use (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures ca n penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. T he result can be a significant loss of light output from the fixture. Knowledge of the properties of the m aterials selected to be used in the construction of fixtures can help prevent these issues. (14) The slug is electrically isolated. (15) Attaching LEDs, do not use adhesives that outgas organic vapor. (16) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the rev erse voltage is applied to LED, migration can be generated resulting in LED damage. (17) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev3.1 22 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev3.1 23 www.seoulsemicon.com SZ5-M1-WX-XX – High-Power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev3.1 24 www.seoulsemicon.com