270 MHz, 400 μA Current Feedback Amplifier AD8005 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAMS Ultralow power 400 μA power supply current (4 mW on ±5 VS) Specified for single supply operation High speed 270 MHz, −3 dB bandwidth (G = +1) 170 MHz, −3 dB bandwidth (G = +2) 280 V/μs slew rate (G = +2) 28 ns settling time to 0.1%, 2 V step (G = +2) Low distortion/noise −63 dBc at 1 MHz, VO = 2 V p-p −50 dBc at 10 MHz, VO = 2 V p-p 4.0 nV/√Hz input voltage noise at 10 MHz Good video specifications (RL = 1 kΩ, G = +2) Gain flatness 0.1 dB to 30 MHz 0.11% differential gain error 0.4° differential phase error 8 NC 7 +VS +IN 3 6 OUT –VS 4 5 NC NC 1 12146-002 TOP VIEW (Not to Scale) NC = NO CONNECT Figure 1. 8-Lead PDIP and SOIC_N AD8005 OUT 1 5 +VS 4 –IN +IN 3 12146-003 –VS 2 TOP VIEW (Not to Scale) Figure 2. 5-Lead SOT-23 3 APPLICATIONS G = +2 VOUT = 200mV p-p RL = 1kΩ 2 Signal conditioning A/D buffer Power sensitive, high speed systems Battery powered equipment Loop/remote power systems Communication or video test systems Portable medical instruments AD8005 –IN 2 NORMALIZED GAIN (dB) 1 0 –1 VS = ±5V –2 –3 –4 VS = +5V GENERAL DESCRIPTION The AD8005 is an ultralow power, high speed amplifier with a wide signal bandwidth of 170 MHz and slew rate of 280 V/μs. This performance is achieved while consuming only 400 μA of quiescent supply current. These features increase the operating time of high speed battery powered systems without reducing dynamic performance. 10 100 500 Figure 3. Frequency Response; G = ±2, VS = +5 V or ±5 V –40 G = +2 VOUT = 2V p-p RL = 1kΩ –50 THIRD HARMONIC –60 –70 SECOND HARMONIC –80 –90 –100 1 10 FREQUENCY (MHz) 20 12146-004 The AD8005 is characterized for +5 V and ±5 V supplies and operates over the industrial temperature range of −40°C to +85°C. The amplifier is supplied in 8-lead PDIP, 8-lead SOIC_N, and 5-lead SOT-23 packages. 1 FREQUENCY (MHz) DISTORTION (dBc) The current feedback design results in gain flatness of 0.1 dB to 30 MHz while offering differential gain and phase errors of 0.11% and 0.4°. Harmonic distortion is low over a wide bandwidth with THDs of −63 dBc at 1 MHz and −50 dBc at 10 MHz. Ideal features for a signal conditioning amplifier or buffer to a high speed A-to-D converter in portable video, medical or communication systems. –6 0.1 12146-001 –5 Figure 4. Distortion vs. Frequency; VS = ±5 V Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©1996–2014 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com AD8005 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................5 Applications ....................................................................................... 1 Typical Performance Characteristics ..............................................6 General Description ......................................................................... 1 Applications..................................................................................... 10 Functional Block Diagrams ............................................................. 1 Driving Capacitive Loads .......................................................... 10 Revision History ............................................................................... 2 Single-Supply Level Shifter ....................................................... 10 Specifications..................................................................................... 3 Single-Ended-to-Differential Conversion............................... 10 ±5 V Supplies ................................................................................ 3 Layout Considerations ............................................................... 11 +5 V Supply ................................................................................... 4 Increasing Feedback Resistors .................................................. 11 Absolute Maximum Ratings............................................................ 5 Outline Dimensions ....................................................................... 12 Thermal Resistance ...................................................................... 5 Ordering Guide .......................................................................... 13 Maximum Power Dissipation ..................................................... 5 REVISION HISTORY 3/14—Rev. A to Rev. B Updated Format .................................................................. Universal Deleted Operating Temperature Range Parameter, Table 1........ 3 Changes to Table 3 ............................................................................ 5 Change to Figure 11 ......................................................................... 6 Changes to Ordering Guide .......................................................... 13 8/99—Rev. 0 to Rev. A Rev. B | Page 2 of 16 Data Sheet AD8005 SPECIFICATIONS ±5 V SUPPLIES At TA = +25°C, VS = ±5 V, RL = 1 kΩ, unless otherwise noted. Table 1. Parameter DYNAMIC PERFORMANCE −3 dB Small Signal Bandwidth Bandwidth for 0.1 dB Flatness Large Signal Bandwidth Slew Rate (Rising Edge) Settling Time to 0.1% DISTORTION/NOISE PERFORMANCE Total Harmonic Distortion Differential Gain Differential Phase Input Voltage Noise Input Current Noise Conditions RF = 3.01 kΩ for N-8 Package or RF = 2.49 kΩ for R-8 Package or RF = 2.10 kΩ for RJ-5 Package G = +1, VO = 0.2 V p-p G = +2, VO = 0.2 V p-p G = +2, VO = 0.2 V p-p G = +10, VO = 4 V p-p, RF = 499 Ω G = +2, VO = 4 V Step G = –1, VO = 4 V Step, RF = 1.5 kΩ G = +2, VO = 2 V Step RF = 3.01 kΩ for N-8 Package or RF = 2.49 kΩ for R-8 Package or RF = 2.10 kΩ for RJ-5 Package fC = 1 MHz, VO = 2 V p-p, G = +2 fC = 10 MHz, VO = 2 V p-p, G = +2 NTSC, G = +2 NTSC, G = +2 f = 10 MHz f = 10 MHz, +IIN −IIN Min Typ 225 140 10 270 170 30 40 280 1500 28 MHz MHz MHz MHz V/µs V/µs ns −63 −50 0.11 0.4 4.0 1.1 9.1 dBc dBc % Degrees nV/√Hz pA/√Hz pA/√Hz DC PERFORMANCE Input Offset Voltage 5 400 6 1000 VCM = ±2.5 V 46 90 260 1.6 3.8 54 MΩ Ω pF ±V dB Positive Negative RL = 50 Ω +3.7 Offset Drift +Input Bias Current 40 0.5 TMIN to TMAX −Input Bias Current 5 TMIN to TMAX Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Short Circuit Current POWER SUPPLY Quiescent Current Power Supply Rejection Ratio +Input −Input +Input +3.90 −3.90 10 60 400 TMIN to TMAX VS = ±4 V to ±6 V Rev. B | Page 3 of 16 56 66 30 50 Units ±mV ±mV µV/°C ±µA ±µA ±µA ±µA nA/°C kΩ TMIN to TMAX Input Bias Current Drift (±) Open-Loop Transimpedance INPUT CHARACTERISTICS Input Resistance Max 1 2 10 12 −3.7 475 560 V V mA mA µA µA dB AD8005 Data Sheet +5 V SUPPLY At TA = +25°C, VS = +5 V, RL = 1 kΩ to 2.5 V, unless otherwise noted. Table 2. Parameter DYNAMIC PERFORMANCE −3 dB Small Signal Bandwidth Bandwidth for 0.1 dB Flatness Large Signal Bandwidth Slew Rate (Rising Edge) Settling Time to 0.1% DISTORTION/NOISE PERFORMANCE Total Harmonic Distortion Differential Gain Differential Phase Input Voltage Noise Input Current Noise Conditions RF = 3.01 kΩ for N-8 Package or RF = 2.49 kΩ for R-8 Package or RF = 2.10 kΩ for RJ-5 Package G = +1, VO = 0.2 V p-p G = +2, VO = 0.2 V p-p G = +2, VO = 0.2 V p-p G = +10, VO = 4 V p-p, RF = 499 Ω G = +2, VO = 4 V Step G = –1, VO = 4 V Step, RF = 1.5 kΩ G = +2, VO = 2 V Step RF = 3.01 kΩ for N-8 Package or RF = 2.49 kΩ for R-8 Package or RF = 2.10 kΩ for RJ-5 Package fC = 1 MHz, VO = 2 V p-p, G = +2 fC = 10 MHz, VO = 2 V p-p, G = +2 NTSC, G = +2 NTSC, G = +2 f = 10 MHz f = 10 MHz, +IIN −IIN Min Typ 190 110 10 225 130 30 45 260 775 30 MHz MHz MHz MHz V/µs V/µs ns −60 −50 0.14 0.70 4.0 1.1 9.1 dBc dBc % Degrees nV/√Hz pA/√Hz pA/√Hz DC PERFORMANCE Input Offset Voltage 5 50 8 500 48 120 300 1.6 1.5 to 3.5 54 MΩ Ω pF V dB 0.95 to 4.05 10 30 V mA mA Offset Drift +Input Bias Current 40 0.5 TMIN to TMAX −Input Bias Current 5 TMIN to TMAX Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Short Circuit Current POWER SUPPLY Quiescent Current Power Supply Rejection Ratio OPERATING TEMPERATURE RANGE +Input −Input +Input VCM = 1.5 V to 3.5 V 1.1 to 3.9 RL = 50 Ω 350 TMIN to TMAX VS = +4 V to +6 V Rev. B | Page 4 of 16 56 –40 35 50 Units ±mV ±mV µV/°C ±µA ±µA ±µA ±µA nA/°C kΩ TMIN to TMAX Input Bias Current Drift (±) Open-Loop Transimpedance INPUT CHARACTERISTICS Input Resistance Max 1 2 10 11 425 470 66 +85 µA µA dB °C Data Sheet AD8005 ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION Parameter Supply Voltage Internal Power Dissipation1 PDIP Package (N-8) SOIC_N (R-8) SOT-23 Package (RJ-5) Input Voltage (Common Mode) Differential Input Voltage Output Short Circuit Duration Storage Temperature Range Operating Temperature Range Lead Temperature Range (Soldering 10 sec) 1 Rating 12.6 V 1.3 Watts 0.75 Watts 0.5 Watts ±VS ± 1 V ±3.5 V Observe Power Derating Curves –65°C to +125°C –40°C to +85°C +300°C See Table 4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for device in free air. The maximum power that can be safely dissipated by the AD8005 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Exceeding this limit temporarily causes a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. While the AD8005 is internally short circuit protected, this is not sufficient to guarantee that the maximum junction temperature (+150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves shown in Figure 5. 2.0 TJ = 150°C MAXIMUM POWER DISSIPATION (W) Table 3. 8-LEAD PDIP PACKAGE 1.5 8-LEAD SOIC_N PACKAGES 1.0 0.5 5-LEAD SOT-23 PACKAGE θJA 90 155 240 Unit °C/W °C/W °C/W 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 AMBIENT TEMPERATURE (°C) Figure 5. Maximum Power Dissipation vs. Temperature ESD CAUTION Rev. B | Page 5 of 16 90 12146-005 Table 4. Thermal Resistance Package Type 8-Lead PDIP Package 8-Lead SOIC_N Package 5-Lead SOT-23 Package AD8005 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 5 5 VS = ±5V VOUT = 200mV p-p RL = 1kΩ 4 G = +1 3 NORMALIZED GAIN (dB) 3 2 1 0 G = +2 –1 –2 2 1 –1 –2 G = +10 RF = 499Ω –3 G = –1 RF = 1.5kΩ 0 G = –10 RF = 1kΩ –3 –4 –4 10 100 500 FREQUENCY (MHz) –5 1 100 Figure 6. Frequency Response; G = +1, +2, +10; VS = ±5 V Figure 9. Frequency Response; G = −1, −10; VS = ±5 V 0 140 G = +2 VOUT = 200mV p-p RL = 1kΩ 120 5.9 100 –80 80 –120 GAIN (dB) 5.8 5.7 5.6 –40 PHASE 6.0 GAIN (dB) 500 FREQUENCY (MHz) 6.2 6.1 10 12146-009 1 12146-006 –5 60 5.5 –160 GAIN 40 –200 20 –240 PHASE (Degrees) NORMALIZED GAIN (dB) VS = ±5V VOUT = 200mV p-p RL = 1kΩ 4 5.4 10 100 500 FREQUENCY (MHz) 0 1k 6 9 PEAK-TO-PEAK OUTPUT VOLTAGE; ≤1% THD (V) 10 5 VS = ±5V VOUT = 2V p-p 3 VS = ±5V VOUT = 4V p-p 2 1 0 –280 1G 7 6 5 4 3 2 500 FREQUENCY (MHz) 12146-008 1 0 0.5 100 100M 8 –2 10 10M VS = ±5V G = +2 RL = 1kΩ –1 1 1M Figure 10. Transimpedance Gain and Phase vs. Frequency 7 4 100k FREQUENCY (Hz) Figure 7. Gain Flatness; G = +2; VS = ±5 V or +5 V GAIN (dB) 10k Figure 8. Large Signal Frequency Response; G = +2, RL = 1 kΩ 1 10 FREQUENCY (MHz) Figure 11. Output Swing vs. Frequency; VS = ±5 V Rev. B | Page 6 of 16 100 12146-011 1 12146-007 5.2 0.1 12146-010 5.3 Data Sheet AD8005 –40 –40 G = +2 VOUT = 2V p-p RL = 1kΩ –50 THIRD HARMONIC DISTORTION (dBc) –60 –70 SECOND HARMONIC –80 –60 –70 SECOND HARMONIC –80 –90 10 20 FREQUENCY (MHz) –100 12146-012 1 1 Figure 12. Distortion vs. Frequency; VS = ±5 V DIFFERENTIAL GAIN (%) –0.05 –0.10 0 –0.05 –0.10 MIN = –0.01 MAX = 0.39 p-p = 0.40 0.04 0.02 0 –0.02 –0.06 1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH MODULATING RAMP LEVEL (IRE) 0.5 0 VS = +5V G = +2 RL = 1kΩ TO +1.5V –0.5 –1.0 12146-013 VS = ±5V G = +2 RL = 1kΩ –0.04 MIN = 0.00 MAX = 0.70 p-p = 0.70 1.0 DIFFERENTIAL PHASE (Degrees) 0.06 DIFFERENTIAL PHASE (Degrees) VS = +5V G = +2 RL = 1kΩ TO +1.5V 0.05 1ST 2ND 3RD 4TH 5TH 6TH 7TH 9TH 10TH 11TH 8TH MODULATING RAMP LEVEL (IRE) Figure 13. Differential Gain and Phase, VS = ±5 V 12146-016 DIFFERENTIAL GAIN (%) 0 Figure 16. Differential Gain and Phase, VS = +5 V 9 PEAK-TO-PEAK OUTPUT VOLTAGE @ 5MHz; ≤0.5% THD (V) 9 8 VS = ±5V 7 6 5 4 3 VS = +5V 2 100 1k LOAD RESISTANCE (Ω) 10k 12146-014 1 0 10 MIN = –0.08 MAX = 0.04 p-p/MAX = 0.12 0.10 VS = ±5V G = +2 RL = 1kΩ 0.05 20 Figure 15. Distortion vs. Frequency VS = +5 V MIN = –0.06 MAX = 0.03 p-p/MAX = 0.09 0.10 10 FREQUENCY (MHz) 12146-015 –90 –100 SWING (V p-p) THIRD HARMONIC f = 5MHz G = +2 RL = 1kΩ 8 7 6 5 4 3 2 1 0 3 4 5 6 7 8 9 TOTAL SUPPLY VOLTAGES (V) Figure 17. Output Swing vs. Supply Figure 14. Output Voltage Swing vs. Load Rev. B | Page 7 of 16 10 11 12146-017 DISTORTION (dBc) –50 G = +2 VOUT = 2V p-p RL = 1kΩ AD8005 Data Sheet –5 12.5 –10 INPUT VOLTAGE NOISE (nV/√Hz) VS = +5V OR ±5V G = +2 RL = 1kΩ –15 CMRR (dB) –20 –25 –30 –35 –40 –45 10.0 7.5 5.0 2.5 0.1 1 10 0 10 12146-018 100 FREQUENCY (MHz) 100k 1M 10M 62.5 INPUT CURRENT NOISE (pA/√Hz) 100 OUTPUT RESISTANCE (Ω) 10k Figure 21. Noise vs. Frequency; VS = +5 V or ±5 V VS = +5V OR ±5V G = +2 RL = 1kΩ VS = +5V VS = ±5V 50.0 37.5 25.0 12.5 INVERTING CURRENT NONINVERTING CURRENT 0.1 1 10 100 500 FREQUENCY (MHz) 12146-019 1 0.03 1k FREQUENCY (Hz) Figure 18. CMRR vs. Frequency; VS = +5 V or ±5 V 10 100 0 10 100 1k 10k 100k 1M 12146-022 –55 0.03 12146-021 –50 10M FREQUENCY (Hz) Figure 19. Output Resistance vs. Frequency; VS = ±5 V and +5 V Figure 22. Noise vs. Frequency; VS = +5 V or ±5 V 10 0 VS = +5V OR ±5V G = +2 RL = 1kΩ –PSRR VOUT 100 –10 90 VIN +PSRR –30 VS = ±5V G = +6 RL = 1kΩ –40 –50 –60 10 0% 1V –80 0.03 0.1 1 10 100 FREQUENCY (MHz) 500 2V 150ns Figure 23. ±Overdrive Recovery, VS = ±5 V, VIN = 2 V Step Figure 20. PSRR vs. Frequency; VS = +5 V or ±5 V Rev. B | Page 8 of 16 12146-023 –70 12146-020 PSRR (dB) –20 Data Sheet AD8005 RF VIN RL 1kΩ 10µF 0.01µF 10µF –VS PROBE: TEK P6137 CLOAD = 10pF NOMINAL 100 90 90 10 0% 12146-025 10 0% 50mV Figure 25. 200 mV Step Response; G = +2, VS = ±2.5 V or ±5 V 10µF 10ns Figure 28. 200 mV Step Response; G = –1, VS = ±2.5 V or ±5 V 100 100 90 90 10 0% 12146-026 10 0% 10ns 0.01µF Figure 27. Test Circuit; G = –1, RF = RG = 1.5 kΩ for N-8, R-8, and RJ-5 Packages 100 10ns 10µF PROBE: TEK P6137 CLOAD = 10pF NOMINAL Figure 24. Test Circuit; G = +2; RF = RG = 3.01 kΩ for N-8 Package; RF = RG = 2.49 kΩ for R-8 and RJ-5 Packages 50mV 0.01µF –VS 12146-024 0.01µF VOUT +VS +VS 50Ω 1V CPROBE 12146-027 CPROBE 51.1Ω 1.5kΩ 12146-028 RL 1kΩ 1.5kΩ VIN VOUT 1V Figure 26. Step Response; G = +2, VS = ±5 V 10ns Figure 29. Step Response; G = −1, VS = ±5 V Rev. B | Page 9 of 16 12146-029 RG AD8005 Data Sheet APPLICATIONS DRIVING CAPACITIVE LOADS R2 1.5kΩ Capacitive loads interact with the output impedance of an op amp to create an extra delay in the feedback path. This reduces circuit stability and can cause unwanted ringing and oscillation. A given value of capacitance causes much less ringing when the amplifier is used with a higher noise gain. RF RG RL 1kΩ AD8005 R3 30.1kΩ 12146-030 CL Figure 32. Bipolar to Unipolar Shift Lever Figure 32 shows a level shifter circuit that can move a bipolar signal into a unipolar range. A positive reference voltage, derived from the +5 V supply, sets a bias level of +1.25 V at the noninverting terminal of the op amp. In ac applications, the accuracy of this voltage level is not important; however, noise is a serious consideration. A 0.1 mF capacitor provides useful decoupling of this noise. R2 R 4 R2 VOUT = − VIN + 1 + VREF R1 R3 + R 4 R1 In the above example, the equation simplifies to VOUT = −VIN + 2.5 V 60 SINGLE-ENDED-TO-DIFFERENTIAL CONVERSION RS = 10Ω 50 Many single supply ADCs have differential inputs. In such cases, the ideal common-mode operating point is usually halfway between supply and ground. Figure 33 shows how to convert a single-ended bipolar signal into a differential signal with a common-mode level of 2.5 V. RS = 5Ω 30 RS = 0Ω +5V 10 0 1 2 3 4 CLOSED-LOOP GAIN (V/V) 5 12146-031 2.49kΩ Figure 31. Capacitive Load Drive vs. Closed-Loop Gain BIPOLAR SIGNAL ±0.5V 0.1µF +5V 0.1µF RIN 1kΩ AD8005 2.49kΩ RF1 2.49kΩ SINGLE-SUPPLY LEVEL SHIFTER In addition to providing buffering, many systems require that an op amp provide level shifting. A common example is the level shifting required to move a bipolar signal into the unipolar range of many modern analog-to-digital converters (ADCs). In general, single supply ADCs have input ranges that are referenced neither to ground nor supply. Instead the reference level is some point in between, usually halfway between ground and supply (+2.5 V for a single supply 5 V ADC). Because high-speed ADCs typically have input voltage ranges of 1 V to 2 V, the op amp driving it must be single supply but not necessarily rail-to-rail. Rev. B | Page 10 of 16 RG 619Ω RF1 3.09kΩ VOUT +5V 0.1µF +5V AD8005 2.49kΩ 2.49kΩ 0.1µF Figure 33. Single-Ended-to-Differential Converter 12146-033 CAPACITIVE LOAD (pF) R4 10kΩ The overall gain function is given by the equation: VS = ±5V 2V OUTPUT STEP WITH 30% OVERSHOOT 20 VOUT 0.1µF 80 40 10µF VREF 5V Figure 30. Driving Capacitive Loads 70 0.01µF The bias level on the noninverting terminal sets the input commonmode voltage to +1.25 V. Because the output is always positive, the op amp can be powered with a single +5 V power supply. RS AD8005 R1 1.5kΩ VIN 12146-032 The capacitive load drive of the AD8005 can be increased by adding a low valued resistor in series with the capacitive load. Introducing a series resistor tends to isolate the capacitive load from the feedback loop, thereby diminishing its influence. Figure 31 shows the effects of a series resistor on capacitive drive for varying voltage gains. As the closed-loop gain is increased, the larger phase margin allows for larger capacitive loads with less overshoot. Adding a series resistor at lower closed-loop gains accomplishes the same effect. For large capacitive loads, the frequency response of the amplifier is dominated by the roll-off of the series resistor and capacitive load. 5V Data Sheet AD8005 Amp 1 has its +input driven with the ac-coupled input signal while the +input of Amp 2 is connected to a bias level of +2.5 V. Thus the −input of Amp 2 is driven to virtual +2.5 V by its output. Therefore, Amp 1 is configured for a noninverting gain of five, (1 + RF1/RG), because RG is connected to the virtual +2.5 V of the –input of Amp 2. one end of the capacitor is within 1/8 inch of each power pin with the other end connected to the ground plane. An additional large (0.47 µF − 10 µF) tantalum electrolytic capacitor must also be connected in parallel. This capacitor supplies current for fast, large signal changes at the output. It must not necessarily be as close to the power pin as the smaller capacitor. When the +input of Amp 1 is driven with a signal, the same signal appears at the −input of Amp 1. This signal serves as an input to Amp 2 configured for a gain of −5, (−RF2/RG). Thus the two outputs move in opposite directions with the same gain and create a balanced differential signal. Locate the feedback resistor close to the inverting input pin in order to keep the stray capacitance at this node to a minimum. Capacitance variations of less than 1.5 pF at the inverting input significantly affect high-speed performance. This circuit can be simplified to create a bipolar in/bipolar out single-ended to differential converter. Obviously, a single supply is no longer adequate and the −VS pins must now be powered with −5 V. The +input to Amp 2 is tied to ground. The ac coupling on the +input of Amp 1 is removed and the signal can be fed directly into Amp 1. LAYOUT CONSIDERATIONS In order to achieve the specified high-speed performance of the AD8005, the user must be attentive to board layout and component selection. Proper RF design techniques and selection of components with low parasitics are necessary. The printed circuit board (PCB) must have a ground plane that covers all unused portions of the component side of the board. This provides a low impedance path for signals flowing to ground. Remove the ground plane from the area under and around the chip (leave about 2 mm between the pin contacts and the ground plane). This helps to reduce stray capacitance. If both signal tracks and the ground plane are on the same side of the PCB, also leave a 2 mm gap between ground plane and track. RG RF Use stripline design techniques for long signal traces (that is, greater than about 1 inch). Striplines must have a characteristic impedance of either 50 Ω or 75 Ω. For the stripline to be effective, correct termination at both ends of the line is necessary. Table 5. Typical Bandwidth vs. Gain Setting Resistors Gain −1 −10 +1 +2 +10 RG 1.49 kΩ 100 Ω ∞ 2.49 kΩ 56.2 Ω RT 52.3 100 Ω 49.9 Ω 49.9 Ω 49.9 Ω Small Signal −3 dB BW (MHz), VS = ±5 V 120 MHz 60 MHz 270 MHz 170 MHz 40 MHz INCREASING FEEDBACK RESISTORS Unlike conventional voltage feedback op amps, the choice of feedback resistor has a direct impact on the closed-loop bandwidth and stability of a current feedback op amp circuit. Reducing the resistance below the recommended value makes the amplifier more unstable. Increasing the size of the feedback resistor reduces the closed-loop bandwidth. 360µA (rms) RO 562Ω VOUT VIN RF 1.49 kΩ 1 kΩ 2.49 kΩ 2.49 kΩ 499 Ω RT 4.99kΩ +5V C3 10µF C2 0.01µF C4 10µF +VS AD8005 VIN 0.2V (rms) –VS INVERTING CONFIGURATION RG RF –5V Figure 35. Saving Power by Increasing Feedback Resistor Network RO VOUT VIN C1 0.01µF C3 10µF C2 0.01µF C4 10µF –VS NONINVERTING CONFIGURATION 12146-034 +VS RT QUIESCENT CURRENT 475µA (MAX) VOUT 2V (rms) 12146-035 C1 0.01µF Figure 34. Inverting and Nonconverting Configurations Chip capacitors have low parasitic resistance and inductance and are suitable for supply bypassing (see Figure 34). Make sure that In power-critical applications where some bandwidth can be sacrificed, increasing the size of the feedback resistor yields significant power savings. A good example of this is the gain of +10 case. Operating from a bipolar supply (±5 V), the quiescent current is 475 µA (excluding the feedback network). The recommended feedback and gain resistors are 499 Ω and 56.2 Ω respectively. In order to drive an rms output voltage of 2 V, the output must deliver a current of 3.6 mA to the feedback network. Increasing the size of the resistor network by a factor of 10, as shown in Figure 35, reduces this current to 360 µA; however, the closed loop bandwidth decreases to 20 MHz. Rev. B | Page 11 of 16 AD8005 Data Sheet OUTLINE DIMENSIONS 0.400 (10.16) 0.365 (9.27) 0.355 (9.02) 8 5 1 4 0.280 (7.11) 0.250 (6.35) 0.240 (6.10) 0.100 (2.54) BSC 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) 0.060 (1.52) MAX 0.210 (5.33) MAX 0.015 (0.38) MIN 0.150 (3.81) 0.130 (3.30) 0.115 (2.92) SEATING PLANE 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) 0.195 (4.95) 0.130 (3.30) 0.115 (2.92) 0.015 (0.38) GAUGE PLANE 0.014 (0.36) 0.010 (0.25) 0.008 (0.20) 0.430 (10.92) MAX 0.005 (0.13) MIN 0.070 (1.78) 0.060 (1.52) 0.045 (1.14) 070606-A COMPLIANT TO JEDEC STANDARDS MS-001 CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS. Figure 36. 8-Lead Plastic Dual In-Line Package [PDIP] Narrow Body (N-8) Dimensions shown in inches and (millimeters) 5.00 (0.1968) 4.80 (0.1890) 1 5 6.20 (0.2441) 5.80 (0.2284) 4 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) COPLANARITY 0.10 SEATING PLANE 1.75 (0.0688) 1.35 (0.0532) 0.51 (0.0201) 0.31 (0.0122) 0.50 (0.0196) 0.25 (0.0099) 45° 8° 0° 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) COMPLIANT TO JEDEC STANDARDS MS-012-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 37. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) Rev. B | Page 12 of 16 012407-A 8 4.00 (0.1574) 3.80 (0.1497) Data Sheet AD8005 3.00 2.90 2.80 5 1.70 1.60 1.50 1 4 2 3.00 2.80 2.60 3 0.95 BSC 1.90 BSC 1.45 MAX 0.95 MIN 0.15 MAX 0.05 MIN 0.50 MAX 0.35 MIN 0.20 MAX 0.08 MIN SEATING PLANE 10° 5° 0° 0.60 BSC COMPLIANT TO JEDEC STANDARDS MO-178-AA 0.55 0.45 0.35 11-01-2010-A 1.30 1.15 0.90 Figure 38. 5-Lead Small Outline Transistor Package [SOT-23] (RJ-5) Dimensions shown in millimeters ORDERING GUIDE Model 1 AD8005ANZ AD8005ARZ AD8005ARZ-REEL AD8005ARZ-REEL7 AD8005ARTZ-R2 AD8005ARTZ-REEL7 AD8005AR-EBZ AD8005ART-EBZ 1 Temperature Range –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C Package Description 8-Lead Plastic Dual In-Line Package [PDIP] 8-Lead Standard Small Outline Package [SOIC_N] 8-Lead Standard Small Outline Package [SOIC_N] 8-Lead Standard Small Outline Package [SOIC_N] 5-Lead Small Outline Transistor Package [SOT-23] 5-Lead Small Outline Transistor Package [SOT-23] Evaluation Board Evaluation Board Z = RoHS Compliant Part. Rev. B | Page 13 of 16 Package Option N-8 R-8 R-8 R-8 RJ-5 RJ-5 Branding Code H05 H05 AD8005 Data Sheet NOTES Rev. B | Page 14 of 16 Data Sheet AD8005 NOTES Rev. B | Page 15 of 16 AD8005 Data Sheet NOTES ©1996–2014 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D12146-0-3/14(B) Rev. B | Page 16 of 16