CYSTEKEC MTP4835V8

CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTP4835V8
BVDSS
-30V
ID
RDSON(MAX)@VGS=-10V, ID=-10A
-33A
16mΩ(typ.)
RDSON(MAX)@VGS=-4.5V, ID=-7A
25mΩ(typ.)
Description
The MTP4835V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTP4835V8
DFN3×3
Pin 1
G:Gate S:Source D:Drain
Ordering Information
Device
Package
Shipping
MTP4835V8-0-T1-G
DFN3×3
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
MTP4835V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
Limits
VDS
VGS
-30
±25
-33
-25
-10
-8
-80 *1
-10
5
2.5 *2
28
11
2.5 *3
1.6 *3
-55~+150
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
4.5
50 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
RDS(ON)
*1
GFS
Dynamic
Ciss
Coss
Crss
*1
MTP4835V8
Min.
Typ.
Max.
Unit
-30
-1
-
-1.4
16
25
16
-2.5
±100
-1
-10
24
33
-
V
V
nA
μA
μA
-
1819
138
112
-
Test Conditions
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±25V, VDS=0
VDS=-24V, VGS=0
VDS=-24V, VGS=0, Tj=125°C
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-7A
VDS=-5V, ID=-10A
pF
VDS=-15V, VGS=0, f=1MHz
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
9
6
27
9
24
14.6
6.4
6.6
4
Max.
-
-
-0.76
36
25
-3
-12
-1.2
-
Unit
Test Conditions
ns
VDD=-15V, ID=-1A,
VGS=-10V, RG=2.7Ω
nC
VDS=-15V, ID=-10A, VGS=-10V
Ω
VGS=15mV, VDS=0, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTP4835V8
CYStek Product Specification
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
80
-ID, Drain Current(A)
70
10V,9V, 8V, 7V, 6V, 5V
60
50
40
4V
30
-VGS=2V
20
3V
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
10
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-60
10
Static Drain-Source On-State resistance vs Drain Current
180
1.2
-VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=-2.5V
100
VGS=-4.5V
VGS=-10V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
5
10
15
-IDR, Reverse Drain Current(A)
200
2
R DS(ON) , Normalized Static DrainSource On-State Resistance
180
ID=-10A
160
140
120
100
80
60
40
VGS=-10V, ID=-10A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 16mΩ
20
0
0
0
MTP4835V8
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
-20
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=-24V
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VDS=-15V
VDS=-10V
6
4
2
ID=-10A
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
5
10
15
20
Qg, Total Gate Charge(nC)
25
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
100
12
RDS(ON)
Limit
10
100μs
1ms
10ms
1
100ms
1s
0.1
TA=25°C, Tj=150°, VGS=-10V
RθJA=50°C/W, Single Pulse
DC
-ID, Maximum Drain Current(A)
-ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
10
8
6
4
2
TA=25°C, VGS=-10V,RθJA=50°C/W
0
0.01
0.01
MTP4835V8
0.1
1
10
-VDS , Drain-Source Voltage(V)
100
25
50
75
100
125
150
TJ, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
350
Typical Transfer Characteristics
80
TJ(MAX) =150°C
TA=25°C
θJA=50°C/W
300
-ID, Drain Current(A)
250
Power (W)
VDS=-10V
70
200
150
100
50
60
50
40
30
20
10
0
0.0001
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
Transient Thermal Response Curves
1
D=0.5
ZθJC(t), Thermal Response
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTP4835V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP4835V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP4835V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C830V8
Issued Date : 2013.01.23
Revised Date :
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D
Date
Code
D D
4835
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Inches
Min.
Max.
0.0276
0.0354
0.0000
0.0197
0.0094
0.0138
0.0039
0.0079
0.1280
0.1339
0.1201
0.1280
0.0945
0.1024
DIM
A
A1
b
c
D
D1
D2
Millimeters
Min.
Max.
0.70
0.90
0.00
0.50
0.24
0.35
0.10
0.20
3.25
3.40
3.05
3.25
2.40
2.60
DIM
E
E1
e
H
L
L1
L2
Inches
Min.
Max.
0.1181
0.1260
0.0531
0.0610
0.0256 BSC
0.1260
0.1339
0.0118
0.0197
0.0039
0.0079
0.0445 REF
Millimeters
Min.
Max.
3.00
3.20
1.35
1.55
0.65 BSC
3.20
3.40
0.30
0.50
0.10
0.20
1.13 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP4835V8
CYStek Product Specification