Spec. No. : C698S3 Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 1/ 8 CYStech Electronics Corp. -20V P-CHANNEL Enhancement Mode MOSFET MTP1013S3 BVDSS ID RDSON@VGS=-4.5V, ID=-430mA RDSON@VGS=-4V, ID=-300mA RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-150mA -20V -540mA 0.64Ω(typ) 0.68Ω(typ) 1.1Ω(typ) 1.9Ω(typ) Features • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V. • Compact industrial standard SOT-323 surface mount package. • Pb-free package. Equivalent Circuit MTP1013S3 Outline SOT-323 D G：Gate S：Source D：Drain G S Ordering Information Device MTP1013S3-0-T1-G MTP1013S3 Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C698S3 Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 2/ 8 Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-4.5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ (Note 2) Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Rth,ja Tj, Tstg Limits -20 ±10 -0.54 -1.5 350 357 -55~+150 Unit V A mW °C/W °C Note : 1. Pulse width≤ 10μs, duty cycle≤2%. 2. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *IS *ISM *VSD Min. Typ. Max. Unit -20 -0.5 - -0.8 0.5 0.64 0.68 1.1 1.9 -1.2 ±10 -1 -10 0.9 0.9 1.4 2.7 V V S - 59 21 15 5 6 42 14 1.2 0.38 0.23 - - -0.77 -0.54 -1.5 -1.2 μA Ω Test Conditions VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VDS=-10V, ID=-200mA VGS=±10V, VDS=0 VDS=-20V, VGS=0 VDS=-20V, VGS=0, Tj=55°C VGS=-4.5V, ID=-430mA VGS=-4V, ID=-300mA VGS=-2.5V, ID=-300mA VGS=-1.8V, ID=-150mA pF VDS=-10V, VGS=0, f=1MHz ns VDS=-6V, ID=-500mA, VGS=-4.5V, RG=50Ω nC VDS=-5V, ID=-250mA, VGS=-4.5V A V VGS=0V, IS=-100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTP1013S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C698S3 Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 3/ 8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -VGS=5V, 4.5V,4V 1.6 -VGS=3.5V 1.2 -VGS=3V -VGS=2.5V 0.8 -VGS=2V 0.4 ID=-250μA, VGS=0V -BVDSS, Normalized Drain-Source Breakdown Voltage -ID, Drain Current (A) 2 -VGS=1.8V 1.2 1 0.8 -VGS=1.5V 0.6 0 0 1 2 3 4 5 6 7 -VDS, Drain-Source Voltage(V) 8 9 -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 -VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(Ω) 12 10 -VGS=1.2V 8 6 -VGS=2.5V -VGS=1.5V 4 -VGS=1.8V -VGS=4.5V 2 Tj=25°C VGS=0V 1 0.8 0.6 Tj=150°C 0.4 0.2 0 0.001 0.01 0.1 -ID, Drain Current(A) 0 1 R DS(ON) , Normalized Static DrainSource On-State Resistance 3.6 3.2 2.8 2.4 2 ID=-500mA ID=-300mA ID=-10mA 1.2 0.8 1.5 2 4 1.6 0.3 0.6 0.9 1.2 -IDR, Reverse Drain Current (A) Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 0.4 1.8 1.6 1.4 VGS=-4.5V, ID=-500mA 1.2 1 0.8 0.6 VGS=-2.5V, ID=-300mA 0.4 0 0 MTP1013S3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C698S3 Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 4/ 8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 100 Capacitance---(pF) Ciss C oss Crss 10 1.6 ID=-250μA 1.4 1.2 1 0.8 0.6 0.4 1 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 0 60 80 100 120 140 160 Tj, Junction Temperature(°C) Single Pulse Power Rating, Junction to Ambient Gate Charge Characteristics 20 5 -VGS, Gate-Source Voltage(V) TJ(MAX) =150°C TA=25°C RθJA=357°C/W 16 Power (W) 20 40 12 8 4 VDS=-15V 4 VDS=-10V 3 VDS=-5V 2 1 ID=-250mA 0 0.001 0 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area 0.4 0.6 0.8 1 1.2 Qg, Total Gate Charge(nC) 1.4 1.6 Maximum Drain Current vs JunctionTemperature 10 0.6 100μs 1 1ms 10ms 0.1 100m TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=357°C/W Single Pulse 0.01 DC 0.001 -ID, Maximum Drain Current(A) -ID, Drain Current (A) 0.2 0.5 0.4 0.3 0.2 0.1 TA=25°C, VGS=-4.5V, RθJA=357°C/W 0 0.01 MTP1013S3 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C698S3 Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 5/ 8 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 0.4 1200 -VDS=5V 0.35 PD, Power Dissipation(W) -ID, Drain Current (mA) 1000 TJ= -40°C, 0°C, 25°C 800 600 400 0.3 0.25 0.2 0.15 0.1 150°C 200 0.05 0 0 0 0.5 1 1.5 2 2.5 -VGS, Gate-Source Voltage(V) 0 3 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t 1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=357 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTP1013S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C698S3 Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 6/ 8 Reel Dimension Carrier Tape Dimension MTP1013S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C698S3 Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP1013S3 CYStek Product Specification Spec. No. : C698S3 Issued Date : 2012.07.13 Revised Date : 2013.09.09 Page No. : 8/ 8 CYStech Electronics Corp. SOT-323 Dimension TE TW □□ Marking: Date Code 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Gate 2.Source 3.Drain Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP1013S3 CYStek Product Specification