5V/12V Synchronous Buck PWM Controller EM5303/A General

CYStech Electronics Corp.
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 1/12
5V/12V Synchronous Buck PWM Controller
EM5303/A
General Description
EM5303/A is a synchronous rectified PWM controller operating with 5V or 12V supply voltage. This
device operates at 200/300 kHz and provides an optimal level of integration to reduce size and cost of the
power supply.
This part includes internal soft start, internal compensation networks, over current protection, under
voltage protection, and shutdown function. This part is available in PSOP-8 package.
Features
z
z
z
z
z
z
z
z
z
z
z
Operate from 5V to 12V Voltage Supply
0.6V VREF with 1.5% Accuracy
Voltage Mode PWM Control
200kHz or 300kHz Fixed Frequency Oscillator
0% to 80% Duty Cycle
Internal Soft Start
Over Current Protection
Integrated Bootstrap Diode
Adaptive Non-Overlapping Gate Driver
Under Voltage Protection
Over Voltage Protection
Applications
z
z
z
Notebook & Netbook
Graphic Cards & MB
Low Voltage Logic Supplies
Ordering Information
Part Number
Package
Frequency
EM5303QP
PSOP-8
200kHz
EM5303AQP
PSOP-8
300kHz
EM5303QP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 2/12
Pin Configuration
Typical Application Circuit
Pin Assignment
Pin
Pin No.
Name
BOOT
1
UGATE
2
GND
3
EM5303QP
Pin Function
Bootstrap Supply for the floating upper gate driver. Connect the bootstrap capacitor
C BOOT between BOOT pin and the PHASE pin to form a bootstrap circuit. The
bootstrap capacitor provides the charge to turn on the upper MOSFET. Typical values
for C BOOT range from 0.1uF to 0.47uF. Ensure that C BOOT is placed near the IC.
Upper Gate Driver Output. Connect this pin to the gate of upper MOSFET. This pin
is monitored by the adaptive shoot-through protection circuitry to determine when the
upper MOSFET has turned off.
Signal and Power Ground for the IC. All voltages levels are measured with respect
to this pin. Tie this pin to the ground island/plane through the lowest impedance
connection available.
CYStek Product Specification
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 3/12
CYStech Electronics Corp.
LGATE
4
VCC
5
FB
6
EN
7
PHASE
8
Lower Gate Driver Output. Connect this pin to the gate of lower MOSFET. This pin
is monitored by the adaptive shoot-through protection circuitry to determine when the
lower MOSFET has turn off.
Supply Voltage. This pin provides the bias supply for the EM5303/A and the lower
gate driver. The supply voltage is internally regulated to 4VDD for internal control
circuit. Connect a well-decoupled 4.5V to 13.2V supply voltage to this pin. Ensure
that a decoupling capacitor is placed near the IC.
Feedback Voltage. This pin is the inverting input to the error amplifier. A resistor
divider from the output to GND is used to set the regulation voltage.
Enable Pin. Pulling this pin lower than 0.3V disables the controller and causes the
oscillator to stop, the UGATE and LGATE outputs to be held low.
PHASE Switch Node. Connect this pin to the source of the upper MOSFET and the
drain of the lower MOSFET. This pin is used as the sink for the UGATE driver, and to
monitor the voltage drop across the lower MOSFET for over current protection. This
pin is also monitored by the adaptive shoot-through protection circuitry to determine
when the upper MOSFET has turned off. A Schottky diode between this pin and
ground is recommended to reduce negative transient voltage which is common in a
power supply system.
Function Block Diagram
VCC
5
Internal
regulator
Soft Start
POR
-
6
PWM
- EA
+
BOOT
2
UGATE
8 PHASE
OTP
FB
1
Ramp
Gate
control
logic
VOCP
VCC
VCC
Reference
Oscillator
17V
4 LGATE
75% Vref
EN
7
Enable
0.3V
FB
3 GND
FB
130% Vref
EM5303QP
CYStek Product Specification
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 4/12
CYStech Electronics Corp.
Absolute Maximum Ratings (Note 1)
z Supply voltage, VCC--------------------------------------------------------- -0.3V to 16V
z PHASE to GND
z
z
z
z
z
z
z
z
z
z
z
DC------------------------------------------------------------------------------- -5V to 16V
<200nS------------------------------------------------------------------------- -10V to 32V
BOOT to PHASE------------------------------------------------------------------------ 16V
BOOT to GND
DC--------------------------------------------------------------------- -0.3V to PHASE+16V
<200nS------------------------------------------------------------------------- -0.3V to 42V
UGATE------------------------------------------------------- PHASE – 0.3V to BOOT + 0.3V
LGATE----------------------------------------------------------------- -0.3V to VCC + 0.3V
EN & FB-------------------------------------------------------------------------- -0.3V to 6V
Power Dissipation, PD @ TA = 25°C, PSOP-8 -------------------------------------- 0.625W
Package Thermal Resistance, ΘJA, PSOP-8 (Note 2)-------------------------- 160°C/W
Junction Temperature--------------------------------------------------------------- 150°C
Lead Temperature (Soldering, 10 sec.)-------------------------------------------- 260°C
Storage Temperature Range----------------------------------------------- 65°C to 150°C
ESD susceptibility (Note3)
HBM (Human Body Mode)------------------------------------------------------------ 2KV
MM (Machine Mode)----------------------------------------------------------------- 200V
Recommended Operating Conditions (Note5)
z Supply Voltage, VCC ------------------------------------------------------- 4.5V to 13.2V
z Junction Temperature --------------------------------------------------- -40°C to 125°C
z Ambient Temperature ---------------------------------------------------- -40°C to 85°C
Electrical Characteristics
VCC=12V, TA=25℃, unless otherwise specified
Parameter
Symbol
Test Conditions
Pin Min
Typ
Max
Units
13.2
V
Supply Input Section
Supply Voltage
VCC
Supply Current
ICC
Quiescent Supply Current
Power on Reset Threshold
Power on Reset Hysteresis
Internal Oscillator
ICCQ
VCCRTH
VCCHYS
Free Running Frequency
FSW
Ramp Amplitude
Error Amplifier
Open Loop DC Gain
Gain-Bandwidth Product
Slew Rate
Trans-conductance
△VOSC
EM5303QP
AO
GBW
SR
gm
5
LGATE, UGATE open,
Switching.
No Switching.
4.5
5
5
5
5
3
2
4.2
0.2
4
EM5303
EM5303A
170
255
200
300
1
Guaranteed by Design
Guaranteed by Design
Guaranteed by Design
Guaranteed by Design
55
70
10
6
0.2
3
mA
4.4
230
345
0.7
mA
V
V
KHz
KHz
Vp-p
dB
MHz
V/uS
mS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 5/12
PWM Controller Gate Drivers
Upper Gate Sourcing Current IUG_SRC
Upper Gate Sinking Current
IUG_SNK
Upper Gate RDS(ON) Sinking
RUG_SNK
VBOOT - VPHASE = 12V,
VBOOT - VUGATE = 6V
VBOOT - VPHASE = 12V,
VUGATE – VPHASE = 6V
VBOOT - VPHASE = 12V,
VUGATE – VPHASE = 0.1V
VCC – VLGATE = 6V
VLGATE = 6V
VLGATE = 0.1V
VCC = 12V; VPHASE < 1.2V to
VLGATE > 1.2V
VCC = 12V; VLGATE < 1.2V to
(VUGATE - VPHASE) > 1.2V
Lower Gate Sourcing Current ILG_SRC
Lower Gate Sinking Current
ILG_SNK
Lower Gate RDS(ON) Sinking
RLG_SNK
PHASE Falling to LGATE Rising
Delay
LGATE Falling to UGATE Rising
Delay
Reference Voltage
Nominal Feedback Voltage VFB
Enable Voltage
EN Enable Threshold
VEN
Protection section
FB Under Voltage Protection VFB_UVP FB falling
FB Over Voltage Protection
VFB_OVP FB rising
VCC Over Voltage Protection VCC_OVP
Over Current Threshold
VOCP
Soft-Start Interval
TSS
Temperature Shutdown
TSD
Guaranteed by Design
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
2
-1
A
2
1.5
A
2
2
4
4
4
6
0.591
7
6
6
5
55
115
16
-425
2.4
150
4
Ω
-1
1.5
2
4
A
A
Ω
30
90
nS
30
90
ns
0.6
0.609
V
0.3
0.35
V
65
130
17
-375
3.6
165
75
145
18
-325
5.4
%
%
V
mV
mS
℃
Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
θJA is measured in the natural convection at TA=25oC on a 4-layers high effective thermal conductivity test board with
minimum copper area of JEDEC 51-7 thermal measurement standard. The case point of θJC is on the expose pad for
PSOP-8 package.
θJA PSOP-8 packages is 52°C /W on JEDEC 51-7 (4 layers,2S2P) thermal test board with 50mm2 copper area.
Devices are ESD sensitive. Handling precaution is recommended.
The device is not guaranteed to function outside its operating conditions.
EM5303QP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 6/12
Typical Operating Characteristics
Power On Waveform
Turn On from EN
VIN
VEN
VOUT
VOUT
Phase
Phase
ILx
ILx
VIN=12V,VOUT=1.2V,COUT=1000uF,No Load. VIN=12V,VOUT=1.2V,COUT=1000uF,No Load.
Turn Off from EN
Switching Waveforms: UGATE Turn On
VOUT
UGATE
VEN
PHASE
Phase
UGATE - PHASE
ILx
LGATE
VIN=12V,VOUT=1.2V,COUT=1000uF,IOUT=6A.
VIN=12V,IOUT=10A
Switching Waveforms: UGATE Turn Off
Power Sequencing Operation
UGATE
VIN
PHASE
VOUT
Phase
LGATE
Phase
VIN=12V,IOUT=10A
EM5303QP
VCC =12V Ready,VOUT = 1.2V, COUT = 1000uF,
No Load.
CYStek Product Specification
CYStech Electronics Corp.
Load Transient Response
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 7/12
Over Current Protection
IOUT
Phase
VOUT
VOUT
Phase
IOUT
VIN=12V, VOUT=1.2V, COUT=1000uF.
Output short Ground
Over Current Protection
Load Regulation
Output Voltage Deviation (%)
VIN=12V,VOUT=1.2V,COUT=1000uF.
Phase
VOUT
IOUT
VIN=12V, VOUT=1.2V, COUT=1000uF.
Turn On to Short Circuit
Output current (A)
Output Voltage Deviation (%)
Input Voltage (V)
EM5303QP
Switching Frequency vs. Input Voltage
Switching Frequency Deviation (%)
Line Regulation
Input Voltage (V)
CYStek Product Specification
CYStech Electronics Corp.
Junction Temperature (℃)
EM5303QP
Output Voltage vs. Junction Temperature
Output Voltage Deviation (%)
Switching Frequency Deviation (%)
Switching Frequency vs. Junction
Temperature
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 8/12
Junction Temperature (℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 9/12
Functional Description
EM5303/A is a voltage mode synchronous buck PWM controller. The compensation circuit is implemented
internally to minimize the external component count. This device provides complete protection function
such as over current protection, under voltage protection and over voltage protection.
Supply Voltage
The VCC pin provides the bias supply of EM5303/A control circuit, as well as lower MOSFET’s gate and
the BOOT voltage for the upper MOSFET’s gate. A minimum 0.1uF ceramic capacitor is recommended to
bypass the supply voltage.
Power ON Reset
To let EM5303/A start to operation, VCC voltage must be higher than its POR voltage even when EN
voltage is pulled higher than enable high voltage. Typical POR voltage is 4.2V.
Enable
To let EM5303/A start to operation, EN voltage must be higher than its enable voltage. Typical enable
voltage is 0.3V.
Soft Start
EM5303/A provides soft start function internally. The FB voltage will track the internal soft start signal,
which ramps up from zero during soft start period.
OCP, Over Current Protection
The over current function protects the converter from a shorted output by using lower MOSFET’s
on-resistance to monitor the current. The OCP level can be calculated as the following equation:
IOCP = −
VOCP
RDS(ON)
When OCP is triggered, EM5303/A will shut down the converter and cycles the soft start function in a
hiccup mode. If over current condition still exist after 3 times of hiccup, EM5303/A will shut down the
controller and latch.
UVP, Under Voltage Protection
The FB voltage is monitored for under voltage protection. The UVP threshold is typical 0.4V. When UVP
is triggered, EM5303/A will shut down the converter and cycles the soft start function in a hiccup mode.
OVP, Over Voltage Protection
The FB voltage is monitored for over voltage protection. The OVP threshold is typical 0.8V. When OVP is
triggered, EM5303/A will turn off upper MOSFET and turn on lower MOSFET.
Output Inductor Selection
The output inductor is selected to meet the output voltage ripple requirements and minimize the response
time to the load transient. The inductor value determines the current ripple and voltage ripple. The ripple
current is approximately the following equation:
ΔIL =
VIN − VOUT
V
∗ OUT
L
VIN * FSW
EM5303QP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 10/12
Output Capacitor Selection
An output capacitor is required to filter the output and supply the load transient. The selection of output
capacitor depends on the output ripple voltage. The output ripple voltage is approximately bounded by the
following equation:
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage overshoot across the MOSFET. Use small
ceramic capacitors for high frequency decoupling and bulk capacitors to supply the current needed each
time the upper MOSFET turn on. Place the small ceramic capacitors physically close to the MOSFETs and
between the drain of the upper MOSFET and the source of the lower MOSFET. The important parameters
of the input capacitor are the voltage rating and the RMS current rating. The capacitor voltage rating should
be at least 1.25 times greater than the maximum input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement can be expressed as the following equation:
IRMS = IOUT D(1- D)
For a through hole design, several electrolytic capacitors may be needed. For surface mount designs, solid
tantalum capacitors can also be used but caution must be exercised with regard to the capacitor surge
current rating. These capacitors must be capable of handling the surge current at power-up. Some capacitor
series available from reputable manufacturers are surge current tested.
Power MOSFET Selection
The EM5303/A requires two N-Channel power MOSFETs. These should be selected based upon
on-resistance, breakdown voltage, gate supply requirement, and thermal management requirements.
In high current applications, the MOSFET power dissipation, package selection and heat sink are the
dominate design factor. The power dissipation includes two loss components: conduction loss and
switching loss. The conduction losses are the largest component of power dissipation for both the upper and
lower MOSFETs. These losses are distributed between the two MOSFETs according to duty factor.
The power dissipations in the two MOSFETs are approximately the following equation:
PDUPPER= I2OUT* RDS(ON)* D + 0.5 * IOUT * VIN * FSW * t SW
PDLOWER= I2OUT * RDS(ON)* (1 - D)
Where D is the duty cycle, tSW is the combined switch ON and OFF time.
EM5303QP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
EM5303QP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C551QP
Issued Date : 2010.10.25
Revised Date :
Page No. : 12/12
PSOP-8 Dimension
Marking:
Device Name
Date Code
Device Name
Date Code
8-Lead PSOP-8 Plastic
Surface Mounted Package
CYStek Package Code: QP
*:Typical
Inches
Min.
Max.
0.1850
0.2008
0.1457
0.1614
0.2283
0.2441
0.0130
0.0200
0.05*
0.0472
0.0638
0.0032
0.0110
DIM
A
B
C
D
E
F
G
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
0.33
0.51
1.27 *
1.20
1.62
0.08
0.28
DIM
H
I
J
K
M
N
Inches
Min.
Max.
0.0157
0.0327
0.0075
0.0102
0.0098
0.0197
0°
8°
0.0764
0.0980
0.0764
0.0980
Millimeters
Min.
Max.
0.40
0.83
0.19
0.26
0.25
0.50
0°
8°
1.94
2.49
1.94
2.49
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
EM5303QP
CYStek Product Specification