MTP3403KN3

Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 1/8
CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
MTP3403KN3
BVDSS
ID
RDS(ON)@VGS=-10V, ID=-2.5A
RDS(ON)@VGS=-4.5V, ID=-1.35A
RDS(ON)@VGS=-4V, ID=-1.35A
-30V
-3.3A
63mΩ(typ)
100mΩ(typ)
114mΩ(typ)
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Low gate charge
• Compact and low profile SOT-23 package
• Pb-free & Halogen-free package
Equivalent Circuit
Outline
MTP3403KN3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TA=25°C (Note 1)
Continuous Drain Current @VGS=-10V, TA=70°C (Note 1)
Pulsed Drain Current
(Note 2)
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
PD
Tj, Tstg
Limits
-30
±20
-3.3
-2.6
-15
1.25
0.01
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 270°C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
MTP3403KN3
CYStek Product Specification
Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 2/8
CYStech Electronics Corp.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
Rth,ja
Limit
100
Unit
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 270°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
BVDSX
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
-30
-15
-1
-
-1.7
63
100
114
3.4
-2
±10
-1
-5
80
130
150
-
550
86
63
10
16
20
10
7.6
1.8
2.8
-
-0.76
-3.3
-1.0
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*IS
*VSD
-
Unit
Test Conditions
S
ID=-1mA , VGS=0V
ID=-1mA, VGS=20V
VDS=VGS, ID=-250µA
VGS=±20V, VDS=0
VDS=-30V, VGS=0
VDS=-30V, VGS=0, Tj=55°C
ID=-2.5A, VGS=-10V
ID=-1.35A, VGS=-4.5V
ID=-1.35A, VGS=-4V
VDS=-5V, ID=-1.35A
pF
VDS=-15V, VGS=0, f=1MHz
ns
VDS=-15V, VGS=-4.5V, ID=-1A, RG=10Ω
nC
VDS=-15V, ID=-3.3A, VGS=-4.5V
A
V
VGS=0V, ISD=-1A
V
µA
mΩ
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
Ordering Information
Device
MTP3403KN3
MTP3403KN3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
K3403
CYStek Product Specification
Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 3/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
15
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V, 6V, 5V
-ID, Drain Current (A)
12
-VGS=4V
9
6
-VGS=3V
3
ID=-250μA,
VGS=0V
1.2
1
0.8
-VGS=2V
0.6
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(Ω)
500
400
300
-VGS=3V
200
-VGS=4.5V
100
-VGS=10V
0.01
0.1
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
0
1
0.3
0.6
0.9
1.2
-IDR, Reverse Drain Current (A)
-ID, Drain Current(A)
1.5
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(ON) , Normalized Static DrainSource On-State Resistance
250
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-2.5A
200
150
100
50
1.8
VGS=-10V, ID=-2.5A
1.6
1.4
1.2
1
0.8
RDS(ON) @ Tj=25°C : 63mΩ
0.6
0.4
0
0
MTP3403KN3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
C oss
100
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
100
100μs
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=150°C,
VGS=-10V, RθJA=100°C/W
Single Pulse
0.01
DC
-ID, Maximum Drain Current(A)
4
10
-ID, Drain Current (A)
0
0.001
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V, RθJA=100°C/W
0.5
0
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
Single Pulse Power Rating, Junction to Ambient
75
100
125
150
Tj, Junction Temperature(°C)
175
Gate Charge Characteristics
5
20
VDS=-24V
Power (W)
-VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
RθJA=100°C/W
16
12
8
4
0
0.001
MTP3403KN3
4
VDS=-15V
3
2
1
ID=-3.3A
0
0.01
0.1
1
Pulse Width(s)
10
100
0
2
4
6
Qg, Total Gate Charge(nC)
8
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
1.4
15
-VDS=5V
Surface mounted on FR-4
board with 1 in² pad area
1
12
-ID, Drain Current (mA)
PD, Power Dissipation(W)
1.2
0.8
0.6
0.4
0.2
0
9
6
3
0
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
0
2
4
6
-VGS, Gate-Source Voltage(V)
8
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=100 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTP3403KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTP3403KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP3403KN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C865N3
Issued Date : 2012.08.08
Revised Date :
Page No. : 8/8
SOT-23 Dimension
Marking:
A
L
3
B
TE
K3403
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
H
K
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.95
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP3403KN3
CYStek Product Specification