MTN7000ZHA3

Spec. No. : C320A3
Issued Date : 2007.11.06
Revised Date : 2013.12.24
Page No. : 1/7
CYStech Electronics Corp.
N-Channel MOSFET
MTN7000ZHA3
BVDSS
ID
RDSON (typ.)
60V
115mA
3Ω
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Symbol
Outline
TO-92
MTN7000ZHA3
D
G
S
G：Gate
S：Source
D：Drain
SGD
Ordering Information
Device
MTN7000ZHA3-0-TB-G
MTN7000ZHA3-0-BK-G
Package
Shipping
TO-92
(Pb-free lead plating and halogen-free package)
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
MTN7000ZHA3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320A3
Issued Date : 2007.11.06
Revised Date : 2013.12.24
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
PD
Continuous
Pulsed
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
TCH
Tstg
Limits
60
±20
115
700
115
700
400
1250
+150
-55~+150
*1
*1
*1
*2
Unit
V
V
mA
mA
mA
mA
mW
V
°C
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Static
BVDSS*
60
VGS(th)
1
2.5
IGSS
±10
IDSS
1
3.6
5.5
RDS(ON)*
3
5
GFS
100
Dynamic
Ciss
30.5
Coss
9.3
Crss
5.9
Source-Drain Diode
*IS
115
*ISM
700
*VSD
1.2
Unit
Test Conditions
mS
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=60V, VGS=0
ID=100mA, VGS=5V
ID=100mA, VGS=10V
VDS=10V, ID=100mA
pF
VDS=10V, VGS=0, f=1MHz
V
μA
Ω
mA
V
IS=115mA, VGS=0V
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
MTN7000ZHA3
CYStek Product Specification
Spec. No. : C320A3
Issued Date : 2007.11.06
Revised Date : 2013.12.24
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
0.3
0.3
4V
6V
0.2
0.15
VDS=10V
0.25
3.5V
Drain Current -ID(A)
Drain Current - ID(A)
0.25
3V
0.1
0.2
0.15
0.1
0.05
0.05
VGS=2.2V
0
0
0
1
2
3
Drain-Source Voltage -VDS(V)
0
4
10
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
100
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
4
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
VGS=2.5V
10
VGS=4V
1
0.001
0.01
0.1
Drain Current-ID(A)
VGS=5V
VGS=10V
1
0.001
1
0.01
0.1
1
Drain Current-ID(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Reverse Drain Current vs Source-Drain Voltage
7
10
Source-Drain Voltage-VSD(V)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
1
2
3
Gate-Source Voltage-VGS(V)
6
5
4
ID=100mA
3
ID=50mA
2
1
1
0.1
0.01
0.001
0
0
MTN7000ZHA3
5
10
15
20
Gate-Source Voltage-VGS(V)
25
0
0.2
0.4
0.6
0.8
Reverse Drain Current -IDR(A)
1
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320A3
Issued Date : 2007.11.06
Revised Date : 2013.12.24
Page No. : 4/7
Typical Characteristics(Cont.)
Power Derating Curve
Capacitance vs Drain-to-Source Voltage
450
100
Power Dissipation---PD(mW)
400
Capacitance---(pF)
Ciss
C oss
10
Crss
350
300
250
200
150
100
50
0
1
0.1
1
10
Drain-Source Voltage -VDS(V)
0
100
200
Drain-Source On-State Resistance vs Junction Tempearture
Drain Current vs Gate-Source Voltage
7
0.8
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
0.7
-55°C
0.6
Drain Current-ID(A)
50
100
150
Ambient Temperature---TA(℃)
0.5
25°C
0.4
0.3
125°C
0.2
0.1
6
VGS=10V, ID=100mA
5
4
3
2
1
VDS=10V
0
0
0
1
2
3
4
5
6
7
Gate-Source Voltage-VGS(V)
8
9
10
-60
-20
20
60
100
140
Junction Temperature-Tj(°C)
180
Threshold Voltage vs Junction Tempearture
Threshold Voltage-VGS(th)(V)
2
ID=1mA
1.8
1.6
1.4
1.2
1
-60
-20
20
60
100
140
180
Junction Temperature-Tj(°C)
MTN7000ZHA3
CYStek Product Specification
Spec. No. : C320A3
Issued Date : 2007.11.06
Revised Date : 2013.12.24
Page No. : 5/7
CYStech Electronics Corp.
TO-92 Taping Outline
H2
H2A H2A
H2
D2
A
L
H3
H4 H
L1
H1
D1
F1F2
T2
T
T1
DIM
A
D
D1
D2
F1,F2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
-
MTN7000ZHA3
P1
P
Item
Component body height
Tape Feed Diameter
Lead Diameter
Component Body Diameter
Component Lead Pitch
F1-F2
Height Of Seating Plane
Feed Hole Location
Front To Rear Deflection
Deflection Left Or Right
Component Height
Feed Hole To Bottom Of Component
Lead Length After Component Removal
Lead Wire Enclosure
Feed Hole Pitch
Center Of Seating Plane Location
4 Feed Hole Pitch
Over All Tape Thickness
Total Taped Package Thickness
Carrier Tape Thickness
Tape Width
Adhesive Tape Width
20 pcs Pitch
W1
W
D
P2
Millimeters
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
253
Max.
4.83
4.20
0.53
4.83
2.90
±0.3
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
255
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320A3
Issued Date : 2007.11.06
Revised Date : 2013.12.24
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN7000ZHA3
CYStek Product Specification
Spec. No. : C320A3
Issued Date : 2007.11.06
Revised Date : 2013.12.24
Page No. : 7/7
CYStech Electronics Corp.
TO-92 Dimension
Marking:
α2
A
Product Name
N7000Z
B
□□
1
2
3
Date Code: Year+Month
Year: 4→2004, 5→2005
α3
Month: 1→1, 2→2, ‧‧‧,
C
D
9→9, A→10, B→11, C→12
H
I
G
α1
Style: Pin 1.Source
E
F
2.Gate
3.Drain
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7000ZHA3
CYStek Product Specification