Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 1/ 12 CYStech Electronics Corp. N- AND P-Channel Logic Level Enhancement Mode MOSFET MTC8402S6R BVDSS ID RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)5V Features • ESD protected • High speed switching • Low-voltage drive • Pb-free package Equivalent Circuit N-CH 60V 0.3A 1.6Ω 1.8Ω P-CH -50V -0.18A 5Ω 6Ω Outline MTC8402S6R Tr1 SOT-363R Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Limits N-channel P-channel 60 -55 Unit V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current @TA=25 °C, VGS=10V(-10V) ID 0.3 -0.18 A Continuous Drain Current @TA=70 °C, VGS=10V(-10V) ID 0.24 -0.14 A IDM 1.2 -0.8 A Pulsed Drain Current (Note 1) Power Dissipation @TA=25°C Power Dissipation @TA=70°C Operating Junction and Storage Temperature Range PD Tj; Tstg 0.30 0.18 -55~+150 W °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3.Surface mounted on minimum pad of FR-4 board, t≤5s. MTC8402S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 2/ 12 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note) Symbol Limit Unit Rth,ja 415 °C/W Note : Surface mounted on minimum pad of FR-4 board, t≤5s. Q1, N-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *IS *ISM *VSD Min. Typ. Max. 60 1.0 - 1.6 1.6 1.8 1.9 100 2.5 ±10 1 10 2.2 2.4 2.5 - - 29.3 4.2 2.8 8 6 11 8 0.77 0.1 0.25 - - 0.8 0.3 1.2 1.2 Unit Test Conditions mS VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=48V, VGS=0 VDS=48V, VGS=0 (Tj=70°C) VGS=10V, ID=500mA VGS=5V, ID=100mA VGS=4.5V, ID=100mA VDS=10V, ID=100mA pF VDS=25V, VGS=0, f=1MHz ns VDS=30V, ID=100mA, VGS=10V, RG=25Ω nC VDS=30V, ID=300mA, VGS=10V V μA Ω A V VGS=0V, IS=100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC8402S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 3/ 12 Q2, P-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *IS *ISM *VSD Min. Typ. Max. -50 -1 80 -1.4 5 6 - -2 ±20 -1 -10 6.5 8 - - 24.1 4.6 1.5 6 3 10 4 0.53 0.07 0.17 - - -0.85 -0.18 -0.8 -1.2 Unit Test Conditions mS VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0 VDS=-40V, VGS=0 VDS=-40V, VGS=0 (Tj=70°C) VGS=-10V, ID=-100mA VGS=-5V, ID=-100mA VDS=-10V, ID=-100mA pF VDS=-25V, VGS=0, f=1MHz ns VDS=-25V, ID=-100mA, VGS=-10V, RG=25Ω nC VDS=-25V, ID=-180mA, VGS=-10V V μA Ω A V VGS=0V, IS=-130mA Ordering Information Device MTC8402S6R-0-T1-G MTC8402S6R Package SOT-363 (Pb-free lead plating and Halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 4/ 12 Q1, N-Channel Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 ID, Drain Current (A) 1.4 10V 6V 4.5V 4V 1.0 0.8 3.5V 0.6 3V 0.4 2.5V 0.2 ID=250μA, VGS=0V 1.2 1 0.8 VGS=2V 0.6 0.0 0 2 4 6 8 VDS, Drain-Source Voltage(V) 10 -75 -50 -25 12 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 10 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(Ω) 1 VGS=2.5V VGS=4.5V Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 VGS=0V VGS=10V 1 0.001 0 0.01 0.1 ID, Drain Current(A) 0 1 0.2 0.4 0.6 0.8 IDR, Reverse Drain Current (A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 4 2 ID=100mA 3.5 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 3 2.5 2 1.5 1 0.5 VGS=10V, ID=100mA 1.8 1.6 1.4 1.2 1 0.8 RDSON@Tj=25°C : 1.5Ω 0.6 0 0 MTC8402S6R 1 2 3 4 5 6 7 8 VGS, Gate-Source Voltage(V) 9 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 5/ 12 Q1, N-Channel Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th) , Normalized Threshold Voltage 100 Capacitance---(pF) Ciss 10 C oss Crss ID=250μA 1.4 1.2 1 0.8 0.6 0.4 1 0.1 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 8 VGS, Gate-Source Voltage(V) 6 4 2 6 4 VDS=30V ID=300mA 2 0 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area 0.2 0.4 0.6 0.8 Qg, Total Gate Charge(nC) 1 Maximum Drain Current vs JunctionTemperature 10 0.35 100μs RDS(ON) Limit 1 1ms 10ms 0.1 100m TA=25°C, Tj=150°C, VGS=10V, RθJA=415°C/W Single Pulse 0.01 DC 0.001 ID, Maximum Drain Current(A) ID, Drain Current (A) 60 80 100 120 140 160 Gate Charge Characteristics TJ(MAX) =150°C TA=25°C RθJA=415°C/W 0 0.001 20 40 10 10 8 0 Tj, Junction Temperature(°C) Single Pulse Power Rating, Junction to Ambient (Note on page 2) Power (W) 1.6 0.3 0.25 0.2 0.15 0.1 TA=25°C, VGS=10V, RθJA=415°C/W 0.05 0 0.01 MTC8402S6R 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 6/ 12 Q1, N-Channel Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 0.35 1.4 VDS=10V Mounted on FR-4 board 0.3 PD, Power Dissipation(W) ID, Drain Current (A) 1.2 1 0.8 0.6 0.4 0.25 0.2 0.15 0.1 0.05 0.2 0 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 0 10 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=415 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTC8402S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 7/ 12 Q2, P-Channel Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 0.6 -ID, Drain Current (A) 0.5 4.5V 0.4 4V 0.3 3.5V 0.2 3V 2.5V 0.1 ID=-250μA, VGS=0V -BVDSS, Normalized Drain-Source Breakdown Voltage 5V 1.2 1 0.8 -VGS=2V 0.6 0.0 0 1 2 3 4 5 6 7 8 9 -75 -50 -25 10 -VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 11 -VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(Ω) 12 10 -VGS=3V 9 8 7 -VGS=5V 6 5 Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 0.2 VGS=0V -VGS=10V 0 4 0.001 0.01 0.1 -ID, Drain Current(A) 0 1 0.2 0.4 0.6 0.8 -IDR, Reverse Drain Current (A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 20 R DS(ON) , Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 16 ID=-100mA ID=-30mA 12 8 4 1.6 1.4 VGS=-5V, ID=-100mA 1.2 1 VGS=-10V, ID=-100mA 0.8 0.6 0.4 0 0 MTC8402S6R 1 2 3 4 5 6 7 8 -VGS, Gate-Source Voltage(V) 9 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 8/ 12 Q2, P-Channel Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage Capacitance---(pF) 100 Ciss 10 C oss Crss 1.6 ID=-250μA 1.4 1.2 1 0.8 0.6 0.4 1 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 60 80 100 120 140 160 10 -VGS, Gate-Source Voltage(V) TJ(MAX) =150°C TA=25°C RθJA=415°C/W 8 Power (W) 20 40 Gate Charge Characteristics 10 6 4 2 0 0.001 8 6 4 VDS=-25V ID=-180mA 2 0 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area -ID, Maximum Drain Current(A) 1ms RDS(ON) 10ms 0.1 100m DC 0.01 0.2 0.3 0.4 Qg, Total Gate Charge(nC) 0.5 0.6 0.2 100μs Limited 0.1 Maximum Drain Current vs JunctionTemperature 1 -ID, Drain Current (A) 0 Tj, Junction Temperature(°C) TA=25°C, Tj=150°C, VGS=-10V, RθJA=415°C/W Single Pulse 0.001 0.15 0.1 0.05 TA=25°C, VGS=-10V, RθJA=415°C/W 0 0.01 MTC8402S6R 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 9/ 12 Q2, P-Channel Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 0.35 600 VDS=-10V PD, Power Dissipation(W) -ID, Drain Current (mA) 400 300 200 0.25 0.2 0.15 0.1 100 0.05 0 0 0 1 Mounted on FR-4 board 0.3 500 2 3 4 -VGS , Gate-Source Voltage(V) 5 0 6 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=415 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTC8402S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 10/ 12 Reel Dimension Carrier Tape Dimension MTC8402S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 11/ 12 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC8402S6R CYStek Product Specification Spec. No. : C888S6R Issued Date : 2012.12.24 Revised Date : 2013.03.05 Page No. : 12/ 12 CYStech Electronics Corp. SOT-363 Dimension Marking: XX KNP Date Code 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC8402S6R CYStek Product Specification