MTN3440N6

CYStech Electronics Corp.
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 1/8
N-Channel Enhancement Mode MOSFET
MTN3440N6
Description
The MTN3440N6 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
Equivalent Circuit
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
MTN3440N6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS
TC=25 °C
TC=70 °C
TA=25 °C
TA=70 °C
(Note 1)
(Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
TC=70 °C
Total Power Dissipation
TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
MTN3440N6
ID
IDM
PD
Tj, Tstg
Limits
150
±20
2.2
1.8
1.7
1.4
8
3.2
2.1
2
1.25
-55~+150
Unit
V
A
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 2/8
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
RθJA
Value
39
62.5
Unit
(Note 1)
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
°C/W
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
150
2
-
0.1
3.3
245
270
2.5
4
±100
100
10
320
350
-
V
V/℃
V
283
30
12
12
16
32
17
7.5
1.4
2
-
0.78
45
16
1.7
5
1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
*trr
Qrr
-
Test Conditions
S
VGS=0, ID=250μA
Reference to 25℃, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=120V, VGS=0, Tj=25℃
VDS=120V, VGS=0, Tj=55℃
ID=1.5A, VGS=10V
ID=1.5A, VGS=6V
VDS=15V, ID=1A
pF
VDS=30V, VGS=0, f=1MHz
ns
VDS=75V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=75V, ID=1.7A, VGS=10V,
nA
μA
mΩ
A
V
ns
nC
IS=1.7A,VGS=0V
IS=1.7A,VGS=0V,dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN3440N6-0-T1-G
MTN3440N6
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 3/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
ID, Drain Current(A)
7
BVDSS, Normalized Drain-Source
Breakdown Voltage
8
10V, 9V,8V,7V,6V
6
5
4
VGS=5V
3
2
1.4
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
VGS=4V
1
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-60
10
20
60
100
140
Tj, Junction Temperature(°C)
180
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=6V
VGS=10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
100
0.1
1
10
ID, Drain Current(A)
0
100
700
4
6
8
IDR , Reverse Drain Current(A)
10
R DS(ON), Normalized Static DrainSource On-State Resistance
2.4
600
ID=1.5A
500
400
300
200
100
VGS=10V, ID=1.5A
2
1.6
1.2
0.8
RDS(ON) @ Tj=25°C : 245 mΩ
0.4
0
0
MTN3440N6
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-20
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 4/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.6
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS , Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
140
Gate Charge Characteristics
VDS=75V
ID=1.7A
VDS=10V
VDS=5V
1
VDS=15V
0.1
Pulsed
Ta=25°C
0.01
0.001
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
1ms
1
10ms
100ms
0.1
1s
TA=25°C, Tj(max)=150°C,
VGS=10V, RθJA=62.5°C/W
Single Pulse
0.01
4
6
8
Total Gate Charge---Qg(nC)
10
2
100μs
DC
1.8
ID, Maximum Drain Current(A)
RDS(ON) Limit
2
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
60
10
100
10
20
Tj, Junction Temperature(°C)
1.6
1.4
1.2
1
0.8
0.6
0.4
TA=25°C, VGS=10V, RθJA=62.5°C/W
0.2
0
0.001
0.01
MTN3440N6
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 5/8
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
500
8
VDS=5V
450
Peak Transient Power (W)
ID, Drain Current (A)
7
6
5
4
3
2
TJ(MAX) =150°C
TA=25°C
θJA=62.5°C/W
400
350
300
250
200
150
100
1
50
0
0.0001 0.001
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0.01
10
100
1000
Power Derating Curve
Power Derating Curve
4
2.2
2
1.8
3.6
Mounted on FR-4 board
with 1 in² pad area
PD, Power Dissipation(W)
PD, Power Dissipation(W)
0.1
1
Pulse Width(s)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
0
20
40
60
80 100 120
TC, Case Temperature(℃)
140
160
Transient Thermal Response Curves
r(t), Normalized EffectiveTransient Thermal
Resistance
1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTN3440N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTN3440N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3440N6
CYStek Product Specification
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 8/8
CYStech Electronics Corp.
SOT-26 Dimension
Marking:
Device Name
●
3440
□□□□
●
Date Code
6-Lead SOT-26 Plastic
Surface Mounted Package
CYStek Package Code: N6
Style:
Pin 1. Drain
Pin 2. Drain
Pin 3. Gate
Pin 4. Source
Pin 5. Drain
Pin 6. Drain
Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
DIM
E
E1
e
e1
L
θ
Millimeters
Min.
Max.
1.500
1.700
2.650
2.950
0.950 (BSC)
1.800
2.000
0.300
0.600
0°
8°
(D)
(D)
(G)
(S)
(D)
(D)
Inches
Min.
Max.
0.059
0.067
0.104
0.116
0.037 (BSC)
0.071
0.079
0.012
0.024
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3440N6
CYStek Product Specification