MTDP9620T8

Spec. No. : C573Q8
Issued Date : 2012.03.02
Revised Date : 2014.04.28
Page No. : 1/8
CYStech Electronics Corp.
Dual P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTDP9620T8
BVDSS
ID
RDSON@VGS=-4.5V, ID=-4.8A
RDSON@VGS=-2.5V,ID=-4.2A
RDSON@VGS=-1.8V,ID=-3.5A
-20V
-6.3A
20mΩ(typ)
26mΩ(typ)
34mΩ(typ)
Features
• 1.8V drive available
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTDP9620T8
G：Gate S : Source
D : Drain
Ordering Information
Device
Package
Shipping
MTDP9620T8-0-T6-G
TSSOP-8
(Pb-free lead plating and halogen-free package)
3000 pcs/ Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDP9620T8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C573Q8
Issued Date : 2012.03.02
Revised Date : 2014.04.28
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Symbol
BVDSS
VGS
TA=25°C
TA=70°C
ID
IDM
(Note 2)
TA=25°C
Total Power Dissipation (Note 1)
TA=70°C
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 1)
PD
Tj ; Tstg
Rth,ja
Limits
-20
±12
-6.3
-5
-30
1
0.64
-55~+150
125
Unit
V
A
W
°C
°C/W
Note : 1.Surface mounted on 1 in ² copper pad of FR-4 board, t≤10sec. The value in any given application depends on the user’s specific
board design.
2.Pulse width ≤300μs, Duty Cycle≤2%
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
-20
-0.4
-
-0.53
20
26
34
17
-0.8
±100
-1
-25
28
35
45
-
V
V
nA
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±12V, VDS=0V
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V, Tj=125°C
ID=-4.8A, VGS=-4.5V
ID=-4.2A, VGS=-2.5V
ID=-3.5A, VGS=-1.8V
VDS=-5V, ID=-4.8A
2754
264
223
17
28
90
75
18.4
4.7
6.6
-
pF
VDS=-10V, VGS=0, f=1MHz
ns
VDD=-10V, ID=-1A, VGS=-4.5V, RG=6Ω
nC
VDS=-10V, VGS=-4.5V, ID=-4.8A
-0.83
35
60
-4.8
-20
-1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
mΩ
A
V
ns
nC
VGS=0V, IS=-4.8A
IF=-4.8A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTDP9620T8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2012.03.02
Revised Date : 2014.04.28
Page No. : 3/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
-VGS=2V
25
-ID, Drain Current (A)
5.5V,5V,4.5V,4V,3.5V,3V,2.5V
20
15
-VGS=1.5V
10
5
28
-BVDSS, Drain-Source Breakdown Voltage
(V)
30
-VGS=1V
26
24
22
20
ID=-250μA,
VGS=0V
18
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-1.8V
100
VGS=-2.5V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-4.5V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
-IDR, Reverse Drain Current (A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
120
50
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100
80
60
40
ID=-3.5A
20
ID=-4.8A
45
40
VGS=-1.8V, ID=-3.5A
35
VGS=-2.5V, ID=-4.2A
30
25
20
VGS=-4.5V, ID=-4.8A
15
10
0
0
MTDP9620T8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C573Q8
Issued Date : 2012.03.02
Revised Date : 2014.04.28
Page No. : 4/8
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) ,Normalized Threshold
Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
ID=-250μA
1.3
1.2
1.1
1
0.9
0.8
0.7
Crss
0.6
100
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
10
5
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=-5V
Pulsed
Ta=25°C
0.01
0.001
4
VDS=-10V
ID=-4.8A
3
2
1
0
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8 10 12 14 16
Qg, Total Gate Charge(nC)
18
20
Maximum Drain Current vs JunctionTemperature
100
8
1μs
RDS(ON)
Limite
10
ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
10μs
100μs
1ms
1
10ms
100m
0.1
TA=25°C, Tj=150°C
VGS=-4.5V, RθJA=125°C/W
Single Pulse
DC
0.01
7
6
5
4
3
2
1
TA=25°C, VGS=-4.5V
0
0.01
MTDP9620T8
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2012.03.02
Revised Date : 2014.04.28
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
80
VDS=-10V
-ID, Drain Current(A)
70
60
50
40
30
20
10
0
0
1
2
3
-VGS, Gate-Source Voltage(V)
4
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
10
1
0.1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*RθJA(t)
4.RθJA=125°C/W
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Square Wave Pulse Duration(s)
MTDP9620T8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C573Q8
Issued Date : 2012.03.02
Revised Date : 2014.04.28
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTDP9620T8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C573Q8
Issued Date : 2012.03.02
Revised Date : 2014.04.28
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDP9620T8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C573Q8
Issued Date : 2012.03.02
Revised Date : 2014.04.28
Page No. : 8/8
TSSOP-8 Dimension
Marking:
Device
Name
Date
Code
9620TS
□□□□
8-Lead TSSOP-8 Plastic Package
CYStek Package Code: T8
*: Typical
Millimeters
Min.
Max.
1.200
0.020
0.150
0.800
1.000
0.190
0.300
0.090
0.200
2.900
3.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.047
0.001
0.006
0.031
0.039
0.007
0.012
0.004
0.008
0.114
0.122
DIM
E
E1
e
L
H
θ
Millimeters
Min.
Max.
4.300
4.500
6.250
6.550
0.650 (BSC)
0.500
0.700
0.250*
1°
7°
Inches
Min.
Max.
0.169
0.177
0.246
0.258
0.026 (BSC)
0.020
0.028
0.010*
1°
7°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDP9620T8
CYStek Product Specification