Chopper Transistor PNP Silicon MMBT404ALT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol Value Unit V CEO V CBO V EBO – 35 – 40 – 25 Vdc Vdc Vdc IC – 150 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD 300 mW R θJA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C Total Device Dissipation FR-5 Board,(1) T A =25 °C Derate above 25°C DEVICE MARKING MMBT404ALT1 = 2N ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V (BR)CEO – 35 — — Vdc V (BR)CBO – 40 — — Vdc V (BR)EBO – 25 — — Vdc I CBO — — –100 nAdc I EBO — — –100 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mAdc, I B = 0) Collector– Emitter Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Collector Cutoff Current (V CE = –10Vdc, I E = 0) Emitter Cutoff Current (V EB= –10Vdc, I C = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. O1–1/2 MMBT404ALT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 100 –– 400 –– –– –– –– –– – 0.15 – 0.20 –– –– – 0.85 –– –– – 1.00 C obo –– –– 20 pF td — 43 — ns Rise Time ( I B1 = –1.0 mAdc, I BE(off) = –14Vdc) tr — 180 — ns Storage Time (V CC = –10 Vdc, I C = –10 mAdc) ts — 675 — ns Fall Time (I B1 = I B2 = –1.0 mAdc)(Figure 1) tf — 160 — ns ON CHARACTERISTICS DC Current Gain (I C = –12 mAdc, V CE = – 0.15 Vdc) Collector–Emitter Saturation Voltage (I C = –12mAdc, I B = – 0.4 mAdc) (I C = – 24mAdc, I B = – 1.0 mAdc) Base–Emitter Saturation Voltage (I C = –12mAdc, I B = – 0.4 mAdc) VCE(sat) V Vdc Vdc BE(sat) (I C = –24mAdc, I B = – 1.0 mAdc) SMALL–SIGNAL CHARACTERISTICS Output Capacitance (V CB= – 6.0 Vdc, I E = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time(VCC = –10Vdc, IC = –10 mVdc) (Figure 1) V BB V CC = –10 V R BB 1.0 k 0.1 µF 1.0 k TO SCOPE RB V in 10 k 51 t on , t d , t r t off , t s and t f V in (Volts) –12 +20.6 V BB (Volts) +1.4 –11.6 Voltages and resistor values shown are for I C = 10 mA, I C /I B = 10 and I B1 = I B2 Figure 1. Switching Time Test Circuit O1–2/2