2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 40 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ã 1997 Fairchild Semiconductor Corporation Max Units 2N4401 625 5.0 83.3 *MMBT4401 350 2.8 200 357 mW mW/°C °C/W °C/W 2N4401 / MMBT4401 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 IBL Base Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 20 40 80 100 40 0.75 300 0.4 0.75 0.95 1.2 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance Ceb Emitter-Base Capacitance hie Input Impedance hre Voltage Feedback Ratio hfe Small-Signal Current Gain hoe Output Admittance IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 250 MHz 6.5 pF 30 pF 1.0 15 kΩ 0.1 8.0 x 10 40 500 1.0 30 µmhos 15 ns -4 SWITCHING CHARACTERISTICS td Delay Time VCC = 30 V, VEB = 0.2 V, tr Rise Time IC = 150 mA, IB1 = 15 mA 20 ns ts Storage Time VCC = 30 V, IC = 150 mA 225 ns tf Fall Time IB1 = IB2 = 15 mA 30 ns *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% 2N4401 / MMBT4401 NPN General Purpose Amplifier