-Conductor 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212) 227-6005 MPS-U52 FAX: (201) 376-8960 PNP silicon annular amplifier transistors designed for general-purpose amplifier and driver applications. Complement to NPN MPS-U52 CASE ,52 Collcctor connected to tab MAXIMUM RATINGS- Rating Collector-Emitter Voltage Collector-Base Voltage Emitter- Base Voltage Collector Current — Continuous Symbol Value Unit 40 Vdc 60 Vdc 5.0 Vdc 800 mAdc Watt mW/"C Watts mW/°C °C V CEO VCB V EB !C Total Device Dissipation @ T. = 25°C Derate above 25°C P D"' 1-. 0 Total Device Dissipation @ T_ = 25 °C P D'" 6.0 54.5 -55 to +135 Derate above 25°C Operating and Storage Junction Temperature Range T T III V Stg 9.1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max Unit 18.3 °c/w 0.110 •C/raW Symbol S JC"' "JA"' ELECTRICAL CHARACTERISTICS (T 4 = 25'C unless olherw.se noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (Ic =100uAdc, IE = 0) Collector Cutoff Current (V CB = 40 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (Ic = 10 mAdc, V CE = 10 Vdc) Symbol BV CEO BV CBO 'CBO h FE (Ic = 150 mAdc, VCE = 10 Vdc) (Ic = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (lc = 150 mAdc, I B = 15 mAdc) Base-Emitter Saturation Voltage !„ * 150 mAdc, !„ = 15 mAdc) \, a DYNAMIC CHARACTERISTICS Current-Gain—Bandwidth Product (Ic = 20 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance (V CB = 10 Vdc, IE , 0, f = 100 kHz) V CE(sat) VBE(sat) Min Max 40 - 60 - - 100 50 50 30 300 - 0.4 - 1.3 150 - - 20 Vdc Vdc nAdc Vdc Vdc fT Cob MHz (t) Continuoui paektg* improvement* h«v« enhanced theia guaranteed Maximum Ratings •• fellawi: °D • 1.0 W « T4 - 2S°C. D«r«t« Ibov* 8.O mW/°C. Po - 10 W » T c - 55°C. D...t. .Dov. 80 mW/°C. Tj,TM, - -55 to •t50".»j c - H.5°C/W. «J4 - 125°C. 1 uniwitt packagM can b* Ta-5 l««d formvd bv iddlng -6 to th« dvvica tftl* *nd t*b formed to' fluth mounting bv adding -1 to th« d«vtc« tltla. Quality Semi-Conductors Unit PF