ROHM 2SA1774EB

General Purpose Transistor (50V, 0.15A)
2SA1774EB
Dimensions (Unit : mm)
Applications
General purpose small signal amplifier.
EMT3F
Features
1) Excellent hFE linearity.
2) Complements the 2SC4617EB.
1.6
0.7
(1)
0.5 0.5
1.0
0.45
(3)
0.37
Structure
PNP silicon epitaxial.
planar transistor.
0.45
1.6
0.86 0.37
0.26
(2)
0.13
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
∗ = Denotes hFE
Abbreviated symbol : F
∗
Absolute maximum (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−6
V
IC
−150
Collector current
Power dissipation
Junction temperature
Range of storage temperature
mA
ICP
∗1
−200
PD
∗2
150
mW
Tj
150
°C
Tstg
−55 to +150
°C
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Collector-base breakdown voltage
BVCBO
−60
−
−
V
IC=−50μA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE=−50μA
Collector cutoff current
ICBO
−
−
−100
nA
VCB=−60V
Emitter cutoff current
IEBO
−
−
−100
nA
VEB=−6V
VCE(sat)
−
−
−0.5
V
IC/IB=−50mA/−5mA
hFE
120
−
390
−
VCE=−6V, IC=−1mA
Transition frequency
fT
−
140
−
MHz
Output capacitance
Cob
−
4.0
5.0
pF
Collector-emitter saturation voltage
DC current gain
Conditions
VCE=−12V, IE=2mA, f=100MHz
VCE=−12V, IE=0A, f=1MHz
hFE rank categories
Rank
Q
R
hFE
120 to 270
180 to 390
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.12 - Rev.C
2SA1774EB
Data Sheet
Electrical characterristic curves
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−24.5
−17.5
−4
−10.5
−7.0
−2
−3.5μA
−0.4
−0.8
−1.2
−1.6
25˚C
50
−500
−450
−400
−350
−300
−250
−150
−40
−100
−20
−50μA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
Ta=100˚C
−40˚C
200
Ta=25˚C
−200
IB=0
−2.0
500
100
−60
Fig.2 Grounded emitter output
characteristics (I)
DC CURRENT GAIN : hFE
100
50
−1
Ta=25˚C
−0.5
−0.2
IC/IB=50
−0.1
20
10
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
COLLECTOR CURRENT : IC (mA)
1000
TRANSITION FREQUENCY : fT (MHz)
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
500
200
100
50
0.5
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
2/2
−5 −10 −20
−50 −100
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
Ta=25˚C
VCE= −12V
lC/lB=10
−2
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
−0.5
−0.2 −0.5 −1
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (I)
−1
VCE= −6V
−5 −10 −20 −50 −100
−2
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
DC CURRENT GAIN : hFE
−14.0
−80
COLLECTOR TO MITTER VOLTAGE : VCE (V)
VCE= −5V
−3V
−1V
200
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−21.0
−6
0
Fig.1 Grounded emitter propagation
characteristics
Ta=25˚C
−28.0
−8
BASE TO EMITTER VOLTAGE : VBE (V)
500
−100
−31.5
COLLECTOR CURRENT : IC (mA)
−10
−35.0
Ta=25˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−20
−10
VCE= −6V
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
−50
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
2009.12 - Rev.C
Notice
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