ROHM 2SC4617EB_09

General purpose small signal amplifier (50V, 0.15A)
2SC4617EB
Dimensions (Unit : mm)
Features
1) Excellent hFE linearity.
2) Complements the 2SA1774EB.
EMT3F
1.6
Structure
NPN silicon epitaxial
planar transistor
0.7
(1)
0.5 0.5
1.0
0.45
(3)
0.37
(1) Base
(2) Emitter
(3) Collector
∗ = Denotes hFE
0.45
1.6
0.86 0.37
0.26
(2)
0.13
Each lead has same dimensions
Abbreviated symbol : B
∗
Absolute maximum (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
IC
Collector current
Power dissipation
Junction temperature
Range of storage temperature
150
mA
ICP
∗1
200
PD
∗2
150
mW
Tj
150
°C
Tstg
−55 to +150
°C
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Collector-base breakdown voltage
BVCBO
60
−
−
V
IC=50μA
Emitter-base breakdown voltage
BVEBO
7
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
100
nA
VCB=60V
Emitter cutoff current
IEBO
−
−
100
nA
VEB=7V
VCE(sat)
−
−
400
mV
IC/IB=50mA/5mA
hFE
120
−
390
−
VCE=6V, IC=1mA
Transition frequency
fT
−
180
−
MHz
Output capacitance
Cob
−
2
3.5
pF
Collector-emitter saturation voltage
DC current gain
Conditions
VCE=12V, IE=−2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
hFE rank categories
Rank
Q
R
hFE
120 to 270
180 to 390
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/3
2009.12 - Rev.C
2SC4617EB
Data Sheet
Electrical characteristic curves
COLLECTOR CURRENT : IC (mA)
2
1
25°C
−55°C
5
0.5
0.2
0.20mA
0.15mA
40
0.10mA
20
0.05mA
IB=0A
Fig.2
DC CURRENT GAIN : hFE
VCE=5V
3V
1V
100
50
20
2
5
10 20
VCE=5V
25°C
200
−55°C
100
50
20
10
0.2
50 100 200
0.5 1
2
5
10 20
50 100 200
Fig.4 DC current gain vs.
collector current ( Ι )
Fig.5 DC current gain vs.
collector current ( ΙΙ )
0.2
Ta=100°C
25°C
−55°C
0.05
0.02
0.01
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
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c 2009 ROHM Co., Ltd. All rights reserved.
○
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR CURRENT : IC (mA)
IC/IB=10
0.5
0.2
24μA
21μA
6
18μA
15μA
12μA
4
9μA
6μA
2
3μA
4
IB=0A
12
8
Fig.3
Ta=100°C
25°C
−55°C
0.05
0.02
0.01
2
5
10
20
50 100
COLLECTOR CURRENT : IC (mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
2/3
20
Grounded emitter output
characteristics ( ΙΙ )
0.5
Ta=25°C
0.2
IC/IB=50
20
10
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
Fig. 6 Collector-emitter saturation
voltage vs. collector current
IC/IB=50
0.5 1
16
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
0.1
0.2
27μA
0
0
2.0
COLLECTOR CURRENT : IC (mA)
0.5
0.2
1.6
30μA
Ta=25°C
8
Grounded emitter output
characteristics ( Ι )
Ta=100°C
200
0.1
1.2
500
Ta=25°C
0.5 1
0.8
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Grounded emitter propagation
characteristics
10
0.2
0.4
0
TRANSITION FREQUENCY : fT (MHz)
Fig.1
DC CURRENT GAIN : hFE
0.25mA
60
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
0.30mA
0
0.1
0
500
80
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
10
Ta=100°C
COLLECTOR CURRENT : IC (mA)
20
0.50mA
mA
0.45 A
0.40m
m
0.35 A
Ta=25°C
VCE=6V
COLLECTOR CURRENT : IC (mA)
100
50
Ta=25°C
VCE=6V
500
200
100
50
−0.5 −1
−2
−5
−10 −20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.9 Gain bandwidth product vs.
emitter current
2009.12 - Rev.C
Data Sheet
20
10
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
5
2
Co
b
1
0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
2SC4617EB
Ta=25°C
f=32MHZ
VCB=6V
200
100
50
20
10
−0.2
−0.5
−1
−2
−5
−10
EMITTER CURRENT : IE (mA)
Fig.11 Base-collector time constant
vs. emitter current
3/3
2009.12 - Rev.C
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