Migration Note - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Migration Note
Spansion Flash S29AL008J
to
Eon Flash EN29LV800C
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 04/10
www.ession.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from Spansion
S29AL008J Flash to Eon EN29LV800C Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
The following table is major features of these two devices.
Features
Process
Technology
voltage range
Pin to Pin
EN29LV800C
S29AL008J
0.13 m
0.11 m
2.7 ~ 3.6
Pin 14 = NC (for 48 TSOP)
B3 = NC (for 48 TFBGA)
2.7 ~ 3.6
Pin 14 = WP# (for TSOP 48)
B3 = WP# (for 48 FBGA)
70ns
55ns (Vcc=3.0~3.6V)
Access time
70ns
Secured Silicon
Sector region
None
128-word/256-byte
32Kword x 15 sectors and
32Kword x 15 sectors and
16Kword + 4Kword x 2 + 8Kword 16Kword + 4Kword x 2 + 8Kword
boot sectors at Top or Bottom
boot sectors at Top or Bottom
Byte/Word mode
Yes
Yes
VID and VHH
10.5V - 11.5V
8.5V - 12.5V
Max
CFI Compliant
None
Yes
Erase
Yes
Yes
Suspend/Resume
Continuous
None
Yes
Sector Erasure
Sector
Architecture
Minimum
endurance cycle
Package
100K
1,000K (typ.)
48-pin 12mm x 20mm TSOP
48 ball 6mm x 8mm TFBGA
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
48-pin 12mm x 20mm TSOP
48 ball 6mm x 8mm FBGA
56-pin 16mm x 23.7mm SSOP
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 04/10
www.ession.com
Eon Silicon Solution Inc.
3. HARDWARE CONSIDERATIONS
3.1 ICC comparison
EN29LV800C
Current
Typ
Read ICC1 (5MHz)
S29AL008J
Unit
Max
Typ
Max
7
20
7
12
mA
Write ICC2
15
30
20
30
mA
Standby ICC3
1
5.0
0.2
5.0
A
3.2 WP# input pin
Pin
S29AL008J
EN29LV800C
For boot sector device: at VIL protect first or last
14
NC
16Kbyte sector depending on boot configuration
(top boot or bottom boot).
When unconnected, WP# is internal pull-up at
VIH to unprotect.
3.3 Max VID
S29AL008J VID range is 8.5V and 11.5V. But EN29LV800C VID range is
10.5V~11.5V.
Any voltage level higher than 11.5V would damage the device.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 04/10
www.ession.com
Eon Silicon Solution Inc.
4. SOFTWARE CONSIDERATIONS
4.1 Manufacturer, Device Identification and Autoselect Information comparison
EN29LV800C:
S29AL008J:
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 04/10
www.ession.com
Eon Silicon Solution Inc.
4-2. Secured Silicon Sector
The EN29LV800C doesn’t have Secured Silicon Sector and does not support enter
or Exit Secured Silicon Sector command.
4-3. Continuous Sector Erasure
The EN29LV800C doesn’t support Continuous Sector Erasure function. Users must
issue another sector erase command for the next sector to be erased after the
previous one is completed for EN29LV800C.
4-4. CFI (Common Flash Interface) commands
The EN29LV800C doesn’t support CFI as S29AL008J 03/04. We support CFI from
16Mbit flash. If user has to use CFI to get flash information, we suggest user to use
EN29LV160.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 04/10
www.ession.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 Power-on and Reset Timings
Parameter
Description
tVCS
Vcc Setup Time
RESET# Pulse Width (During
Embedded Algorithms)
RESET# Pulse Width (NOT
During Embedded Algorithms)
Reset# High Time Before Read
RY/BY# Recovery Time ( to
CE#, OE# go low)
RY/BY# Recovery Time ( to
WE# go low)
Reset# Pin Low (During
Embedded Algorithms) to Read
or Write
Reset# Pin Low (NOT During
Embedded Algorithms) to Read
or Write
tRP1
tRP2
tRH
tRB1
tRB2
tREADY1
tREADY2
Test
Setup
EN29LV800C
S29AL008J
Min.
50µs
50µs
Min.
10µs
500ns
Min.
500ns
500ns
Min.
50ns
50ns
Min.
0ns
0ns
Min.
50ns
None*
Max.
20µs
35µs
Max.
500ns
500ns
Note* : There is no description in datasheet.
5.2 ERASE AND PROGRAM PERFORMANCE
The erase and program performance comparison.
EN29LV800C
S29AL008J
Typ
Max
Typ
Max
0.1
2
0.5
10
sec
Chip Erase Time
2
20
10
Note*
sec
Byte Programming Time
8
200
6
Note*
µs
Word Programming Time
8
200
6
150
µs
Byte
4.2
12.6
Note*
Note*
sec
Word
8.4
25.2
Note*
Note*
sec
Parameter
Sector Erase Time
Chip Programming
Time
Unit
Note* : There is no description in datasheet.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 04/10
www.ession.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2009/04/10
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 04/10
www.ession.com